Abstract

We have studied the effects of 1-μm radiation on the surface morphology of crystalline silicon using pulses that are 7 and 48 psec in duration. Contrary to suggestions in the literature and in contrast to observation with longer pulse widths, we consistently observe a crystal-to-amorphous (c–a) transition using the 7-psec pulses as well as periodic ripple formation and ring structure on the surface. Also we have measured a significant pulse-width dependence to the single-shot melting threshold.

© 1984 Optical Society of America

PDF Article

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription