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The culmination in the development of wide bandgap II-VI compound semiconductors towards light emitting applications in the blue-green has been the recent demonstration of diode laser action by the 3M group [1] and the Brown-Purdue team [2]. In this paper we show different variations in the heterostructure design to produce high power, high efficiency laser action, which is especially clear at low temperatures. Our system is based on the (Zn,Cd)Se/ZnSe or (Zn,Cd)Se/Zn(S,Se) QWs the former of which had earlier been shown by us to show good electronic confinement [3], enhanced excitonic effects [4], and good optically pumped laser action, including cw operation at T=77K [5].
© 1992 Optical Society of America
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