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Conferences > ASSP > 2004 > USA > 46

A low-loss and low-saturation-fluence GaInNAs SESAM for ultrafast 1.3-µm solid-state lasers

R. Grange, S. Schön, V. Liverini, S. C. Zeller, M. Haiml, and U. Keller

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Abstract

We demonstrated a 1.3-µm GaInNAs semiconductor saturable absorber mirror self-starting and passively mode locking a sub-10-ps Nd:YLF laser. The incorporation of about 2% of nitrogen into InGaAs redshifts the absorption edge above 1330 nm and reduces the strain in the saturable absorber grown on GaAs/AlAs Bragg reflector. Final absorption edge adjustment has been made with thermal annealing which blueshifts the absorption edge. The GaInNAs resonant and antiresonant SESAMs showed negligible nonsaturable losses, low saturation fluences (about 10 µJ/cm2 or below) and picosecond decay times, which made them well suited for self-starting and stable cw mode locking.

© 2004 Optical Society of America

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