Abstract

The bandgap-graded CdS_xSe_1-x nanowires have been used as building blocks for solar cells. Electrical transport properties were investigated in the fabricated FETs, from which the charge carrier concentration and electron mobility in the bandgap-graded single CdS_xSe_1-x nanowires were revealed to be 2.1 × 10¹⁷ cm⁻³ and 1.5 cm⁻² V⁻¹ s⁻¹. The bandgap-graded single CdS_xSe_1-x nanowires demonstrate the excellent sensing capability to the visible-light. The solar cell devices showed a short-circuit current density of 13.1 mA cm⁻², an open-circuit voltage of 0.21 V, a filling factor of 28 % and a conversion efficiency of 0.77 %. These initial results show a promising potential of utilizing bandgap-graded single CdS_xSe_1-x nanowires as novel units for nanoscale electronic and optoelectronic devices.

© 2013 Optical Society of America