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  • Frontiers in Optics 2009/Laser Science XXV/Fall 2009 OSA Optics & Photonics Technical Digest
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper AWA2
  • https://doi.org/10.1364/AIOM.2009.AWA2

All-epitaxial growth of low-loss, large-aperture orientation-patterned gallium arsenide (OPGaAs)

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Abstract

Improved reactor design and optimized process parameters have enabled all-epitaxial growth of large diameter (3-inch), large aperture (>1.5mm thick), and low-loss (<0.005cm−1) quasi-phasematched GaAs for powerful and efficient fiber-laser-pumped mid-IR OPOs.

© 2009 Optical Society of America

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