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Conferences > ACPC > 2021 > T4A > T4A.165

Technical Characteristic Improvement for Tunneling Injection Transistor Laser using Single Barrier-Double Quantum Well Graded Structure

Ghazaleh Nourbakhsh, Hassan Kaatuzian, and Behzad Namvar

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Abstract

Here, we represent a double quantum well Tunnel-Injection graded-base Transistor Laser with one barrier. We achieved 37.5% reduction in threshold current, and 11.1GHz increment in optical bandwidth compared to previously reported results.

© 2021 The Author(s)

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