Abstract

We present the epitaxial growth of materials, wafer-level device fabrication and characterization of mass-production 200-Gb/s 850nm 1×4 VCSEL array with maximum current-light slope efficiency up to 1.03 W/A, operating at 25-Gb/s OOK and 50-Gb/s PAM4.

© 2017 Optical Society of America

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