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InGaAlAs electroabsorption-modulated DFB-laser having high extinction ratios fabricated by identical epitaxial layer technique

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Abstract

InGaAlAs electroabsorption-modulated DFB-lasers fabricated by identical epitaxial layer technique are demonstrated. The laser has larger than 20-dB static extinction ratios at -2V modulator reverse bias. The small signal modulation bandwidth is larger than 11 GHz.

© 2017 Optical Society of America

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