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Conferences > ACP > 2009 > WL > WL40

Low-temperature Si/Si Wafer Bonding Using Boride Treated Surface

Hailan Song, Hui Huang, Xiaomin Ren, Wenjuan Wang, and Yongqing Huang

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Abstract

An approach for Si/Si wafer bonding based on boride-solution treatment was presented. The bonding energy is higher than the Si fracture energy by annealing at 180°C. The properties of the bonded structures were studied in terms of the interface shape, electrical and optical characteristic through SEM, and interface I-V curve.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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