Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > ACP > 2009 > TuEE > TuEE5

Q-switched Yb-doped Microstructure Fiber Laser Using GaAs as Saturable Absorber

Shenggui Fu and Xiaojuan Liu

Not Accessible

Your library or personal account may give you access

Abstract

A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

PDF Article
More Like This
High-repetition-rate passively Q-switched ytterbium doped fiber laser with Cr4+:YAG saturable absorber

Lei Pan, Ilya Utkin, and Robert Fedosejevs
JTuA70 Conference on Lasers and Electro-Optics (CLEO:S&I) 2007

Q-switched Yb-doped fiber laser with WS2 saturable absorber

Guoqing Hu, Meng Zhang, Lingling Chen, Xuekun Zhu, Guouhua Hu, Richard C. T. Howe, Xin Zhao, Zheng Zheng, and Tawfique Hasan
25A3_4 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2015

Q-switched operation of Yb-fiber laser based on the waveguide YAG:Cr4+ saturable absorber

A. G. Okhrimchuk, A.V. Shestakov, V. Mezentsev, V.V. Dvoyrin, E. Sholokhov, and I. Bennion
JTuC19 Femtosecond Laser Microfabrication (LM) 2009

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use