Abstract

A passive Q-switched Yb-doped microstructure fiber (MF) laser is demonstrated using a GaAs wafer as the saturable absorber. A pulse duration as short as 80 ns was obtained with the maximum repetition rate of 830 Hz. The maximum average output power is 5.8 W at 1080 nm wavelength.

© 2009 OSA, IEEE Photonics Society, SPIE, COS, CIC

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