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InxGa1−xAs/InAsyP1−y lasers and photodiodes for 2.55-μm optical fiber communications

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We are developing InxGa1−xAs/InAsyP1−y lasers and photodiodes for optical fiber communication systems operating at 2.55 μm, the wavelength at which zirconium-fluoride glass fibers have a potentially very low-loss minimum.1 Both the lasers and photodiodes have InxGa1−x-As active or absorbing layers lattice matched to InASyP1−y cladding or capping layers. When used for 2.55-μm sources or detectors, the lattice constants of the appropriate ternaries do not coincide with any binary substrate. A compositionally graded region of InGaAs or InAsP accommodates the lattice mismatch between these ternary layers and an InP substrate. Such a grading scheme has been successfully used to fabricate InxGa1−xAs/InyGa1−yP lasers with emission wavelengths of 0.9-1.15 μm.2 However, extending the emission wavelength to 2.55 μm requires the InxGa1−xAs/InAsyP1−y ternary system. The lattice-matched AIGaAsSb/InGaAsSb laser system appears to have a long-wavelength limit of 2.4 μm.3 We report the first results using this new ternary combination. All the device structures were grown by the hydride vapor phase epitaxial technique.4

© 1988 Optical Society of America

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