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GaAs MESFET compatible photodetectors

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An interdigitated metal-semiconductor-metal (IMSM) photodetector fabricated directly on the same substrate as GaAs MESFETs holds the promise of inexpensive high-speed monolithic fiber-optic receivers.1,2 Detectors fabricated directly on semi-insulating substrates have previously shown poor quantum efficiency and an unexplained low-frequency gain. We show that a trap-induced tunneling of electrons at the sharp edge of the negative electrode can explain both of these effects. We have fabricated detectors on a number of semi-insulating substrates and show that high-efficiency detectors with frequency responses to 7 GHz are possible on certain liquid encapsulated Czochralski (LEC) substrates.

© 1986 Optical Society of America

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