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High-power inverted channel substrate planar laser grown by MOCVD

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High-power semiconductor lasers are needed in several optical signal processing applications and fiber-optic communications. Among various laser structures, the channel substrate planar (CSP)1 laser facilitates high-power single-mode operation by virtue of its unique geometry. However, growth of such a structure by liquid phase epitaxy (LPE) often results in a nonplanar active layer and improper melt-etch of the channel profile which will degrade the device performance.

© 1986 Optical Society of America

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