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Advances in InGaAs avalanche photodiodes

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This paper presents recent work on planar InP/InGaAs avalanche photodiodes for the 1-μm wavelength region. The essential requirements for the photodiodes are; (1) a decrease of tunneling currents: (2) a reduction of hole pileup at the heterointerface; (3) the formation of guard ring layers. Ways to meet these requirements are being found. Tunneling currents can be decreased by separating the carrier multiplication region (InP) from the light absorption region (InGaAs), which is'called a SAM structure.1 In this structure, however, photogenerated holes pile up at the InP/InGaAs heterointerface and lead to slow response time.

© 1984 Optical Society of America

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