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Modified chemical vapor deposition process chemistry

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The equilibrium chemistry and partition of Ge in germanium phosphosilicate glass which underlie the process of fabrication of lightguide fiber by modified chemical vapor deposition (MCVD) is described. Our model uses the recently redeveloped method of element potentials to determine the concentration of over thirty chemical species present during the process of particle formation and deposition. The method of element potentials greatly simplifies the calculation, since it involves determination of the minimum of the Gibbs-free energy using only four potentials which are assigned to the four individual atoms (Si, Ge, O, and Cl) of which all process species are comprised. Results of the computation are compared with accurate measurements of the extent of incorporation of germanium in silica glass as a function of the oxygen concentration in the reacting gas and the ratio of germanium to silicon in the gaseous mixture.

© 1984 Optical Society of America

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