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Long-wavelength 1.0-1.6- μm detectors

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The current status of long-wavelenglh InGaAsP quaternary alloy photodetectors for fiber-optic communication is reviewed. The material properties important for this application are discussed. High-purity material necessary for low-capacitance p n junction detectors can be routinely prepared in the InGaAsP alloy system. The dark current of InGaAsP photodiodes is often limited by tunneling, and high-purity material can also be used to reduce this component of the dark current. There is some indication that the tunneling current may be defect- assisted rather than band to band.

© 1984 Optical Society of America

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