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Conferences > LAC > 2022 > JTu6A > JTu6A.1

Monolithic In0.83Ga0.17As Multiple Quantum Well Light- Emitting Diodes using InAsPSb Wide Bandgap Barrier

Suho Park, Phuc Dinh Nguyen, Minkyeong Kim, Jiyeon Jeon, Yeongho Kim, and Sang Jun Lee

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Abstract

Monolithic InGaAs/InAsPSb MQW LEDs have been demonstrated. The eSWIR light sources are fully strain-relaxed on the InAsxP1-x metamorphic virtual substrate. The novel InAsPSb barrier can successfully enhance the confinement of the electrons in QWs.

© 2022 The Author(s)

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