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Avalanche Gain in InAsyP1-y Photodetectors for Mid-IR focal Plane Arrays

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Avalanche gains >80 are observed in InAsyP1-y (0.1<y<0.3) grown on p-type InP substrates with lattice strains ≤1%. The devices have a primary dark current ≥200 pA. The InAsyP1-y layers have the same lattice parameter as compositions of InxGa1-xAs which absorb wavelengths ≤2.1 μm, for use in avalanche photodiode imaging arrays operating in the mid-IR spectral range.

© 1995 Optical Society of America

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