160 Gb/s true physical random bit generation using broadband, high-entropy semiconductor laser chaos

Chin-Hao Tseng; Ryo Funabashi; Kazutaka Kanno; Atsushi Uchida; Chia-Chien Wei; Sheng-Kwang Hwang; Sheng-Kwang Hwang

doi:10.1364/CLEO_AT.2022.AW5M.5

Conference on Lasers and Electro-Optics
Technical Digest Series (Optica Publishing Group, 2022),
paper AW5M.5
•https://doi.org/10.1364/CLEO_AT.2022.AW5M.5

160 Gb/s true physical random bit generation using broadband, high-entropy semiconductor laser chaos

Chin-Hao Tseng, Ryo Funabashi, Kazutaka Kanno, Atsushi Uchida, Chia-Chien Wei, and Sheng-Kwang Hwang

CLEO: Applications and Technology 2022

San Jose, California United States
15–20 May 2022
ISBN: 978-1-957171-05-0

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QD and Novel Laser Diodes (AW5M)

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C. Tseng, R. Funabashi, K. Kanno, A. Uchida, C. Wei, and S. Hwang, "160 Gb/s true physical random bit generation using broadband, high-entropy semiconductor laser chaos," in Conference on Lasers and Electro-Optics, Technical Digest Series (Optica Publishing Group, 2022), paper AW5M.5.

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Abstract

This study investigates broad-band, high-entropy chaos generation using a semiconductor laser subject to intensity-modulated optical injection. The proposed chaotic source can be used as a 2-bit true random bit generator with a rate of 160Gb/s.

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