A. Andrejew and his co-authors in this Optics Letters article have designed GaSb-based Vertical-Cavity Surface-Emitting Lasers (VCSELs) with emission wavelength at 3 μm. From the application point of view, this achievement has two promising highlights. First, this wavelength range is of particular interest, since many technologically important gases have strong absorption lines between 2 and 3 μm. Second, designed VCSELs are inherently longitudinally single-mode lasers with an output beam of Gaussian profile, allowing to use simple and inexpensive optics. From the technological point of view, a concept with the undoped epitaxial AlAsSb/GaSb bottom DBR is a promising for mid IR wavelength VCSELs, since avoiding the doped epitaxial mirror considerably reduces unwanted optical losses.
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