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[Crossref]
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[Crossref]
Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]
Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]
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[Crossref]
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[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
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[Crossref]
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[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
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[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
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[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]
Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]
M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]
M. Malinverni, D. Martin, and N. Grandjean, “InGaN based micro light emitting diodes featuring a buried GaN tunnel junction,” Appl. Phys. Lett. 107, 051107 (2015).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]
M. J. Grundmann and U. K. Mishra, “Multi-color light emitting diode using polarization-induced tunnel junctions,” Phys. Status Solidi C 4, 2830–2833 (2007).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]
Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]
Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]
Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]
Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]
D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
D. Hwang, A. J. Mughal, M. S. Wong, A. I. Alhassan, S. Nakamura, and S. P. DenBaars, “Micro-light-emitting diodes with III-nitride tunnel junction contacts grown by metalorganic chemical vapor deposition,” Appl. Phys. Express 11, 012102 (2018).
[Crossref]
E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]
S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]
E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]
Y. Zhang, Z. Jamal-Eddine, F. Akyol, S. Bajaj, J. M. Johnson, G. Calderon, A. A. Allerman, M. W. Moseley, A. M. Armstrong, J. Hwang, and S. Rajan, “Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency,” Appl. Phys. Lett. 112, 071107 (2018).
[Crossref]
Y. Zhang, S. Krishnamoorthy, F. Akyol, A. A. Allerman, M. W. Moseley, A. M. Armstrong, and S. Rajan, “Design and demonstration of ultra-wide bandgap AlGaN tunnel junctions,” Appl. Phys. Lett. 109, 121102 (2016).
[Crossref]
Y. Zhang, S. Krishnamoorthy, J. M. Johnson, F. Akyol, A. Allerman, M. W. Moseley, A. Armstrong, J. Hwang, and S. Rajan, “Interband tunneling for hole injection in III-nitride ultraviolet emitters,” Appl. Phys. Lett. 106, 141103 (2015).
[Crossref]
S. Rajan and T. Takeuchi, “III-nitride tunnel junctions and their applications,” in III-Nitride Based Light Emitting Diodes and Applications (Springer, 2017), pp. 209–238.
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]
S. M. Sadaf, Y.-H. Ra, H. P. T. Nguyen, M. Djavid, and Z. Mi, “Alternating-current InGaN/GaN tunnel junction nanowire white light emitting diodes,” Nano Lett. 15, 6696–6701 (2015).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
S.-R. Jeon, Y.-H. Song, H.-J. Jang, and G. M. Yang, “Lateral current spreading in GaN-based light-emitting diodes utilizing tunnel contact junctions,” Appl. Phys. Lett. 78, 3265–3267 (2001).
[Crossref]
E. C. Young, B. P. Yonkee, F. Wu, S. H. Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Hybrid tunnel junction contacts to III-nitride light emitting diodes,” Appl. Phys. Express 9, 022102 (2016).
[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
S. Neugebauer, M. P. Hoffmann, H. Witte, J. Bläsing, A. Dadgar, A. Strittmatter, T. Niermann, M. Narodovitch, and M. Lehmann, “All metalorganic chemical vapor phase epitaxy of p/n-GaN tunnel junction for blue light emitting diode applications,” Appl. Phys. Lett. 110, 102104 (2017).
[Crossref]
K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]
N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]
N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]
K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]
Y. Kuwano, M. Kaga, T. Morita, K. Yamashita, K. Yagi, M. Iwaya, T. Takeuchi, S. Kamiyama, and I. Akasaki, “Lateral hydrogen diffusion at p-GaN layers in nitride-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 52, 08JK12 (2013).
[Crossref]
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]
T. Takeuchi, G. Hasnain, S. Corzine, M. Hueschen, J. R. P. Schneider, C. Kocot, M. Blomqvist, Y. l. Chang, D. Lefforge, M. R. Krames, L. W. Cook, and S. A. Stockman, “GaN-based light emitting diodes with tunnel junctions,” Jpn. J. Appl. Phys. 40, L861 (2001).
[Crossref]
S. Rajan and T. Takeuchi, “III-nitride tunnel junctions and their applications,” in III-Nitride Based Light Emitting Diodes and Applications (Springer, 2017), pp. 209–238.
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]
T. Takano, T. Mino, J. Sakai, N. Noguchi, K. Tsubaki, and H. Hirayama, “Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency,” Appl. Phys. Express 10, 031002 (2017).
[Crossref]
C. Skierbiszewski, G. Muziol, K. Nowakowski-Szkudlarek, H. Turski, M. Siekacz, A. Feduniewicz-Zmuda, A. Nowakowska-Szkudlarek, M. Sawicka, and P. Perlin, “True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy,” Appl. Phys. Express 11, 034103 (2018).
[Crossref]
M. Malinverni, C. Tardy, M. Rossetti, A. Castiglia, M. Duelk, C. Velez, D. Martin, and N. Grandjean, “InGaN laser diode with metal-free laser ridge using n+-GaN contact layers,” Appl. Phys. Express 9, 061004 (2016).
[Crossref]
M. Diagne, Y. He, H. Zhou, E. Makarona, A. V. Nurmikko, J. Han, K. E. Waldrip, J. J. Figiel, T. Takeuchi, and M. Krames, “Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction,” Appl. Phys. Lett. 79, 3720–3722 (2001).
[Crossref]
C. Kuhn, T. Simoneit, M. Martens, T. Markurt, J. Enslin, F. Mehnke, K. Bellmann, T. Schulz, M. Albrecht, T. Wernicke, and M. Kneissl, “MOVPE growth of smooth and homogeneous Al0.8Ga0.2N:Si superlattices as UVC laser cladding layers,” Phys. Status Solidi A 215, 1800005 (2018).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 1228 (2016).
[Crossref]
A. Knauer, A. Mogilatenko, S. Hagedorn, J. Enslin, T. Wernicke, M. Kneissl, and M. Weyers, “Correlation of sapphire off-cut and reduction of defect density in MOVPE grown AlN,” Phys. Status Solidi B 253, 809–813 (2016).
[Crossref]
M. Martens, C. Kuhn, E. Ziffer, T. Simoneit, V. Kueller, A. Knauer, J. Rass, T. Wernicke, S. Einfeldt, M. Weyers, and M. Kneissl, “Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes,” Appl. Phys. Lett. 108, 151108 (2016).
[Crossref]
K. Bellmann, F. Tabataba-Vakili, T. Wernicke, A. Strittmatter, G. Callsen, A. Hoffmann, and M. Kneissl, “Desorption induced GaN quantum dots on (0001) AlN by MOVPE,” Phys. Status Solidi RRL 9, 526–529 (2015).
[Crossref]
N. Susilo, J. Enslin, L. Sulmoni, M. Guttmann, U. Zeimer, T. Wernicke, M. Weyers, and M. Kneissl, “Effect of the GaN:Mg contact layer on the light-output and current-voltage characteristic of UVB LEDs,” Phys. Status Solidi A 215, 1700643 (2017).
[Crossref]
J. Enslin, F. Mehnke, A. Mogilatenko, K. Bellmann, M. Guttmann, C. Kuhn, J. Rass, N. Lobo-Ploch, T. Wernicke, M. Weyers, and M. Kneissl, “Metamorphic Al0.5Ga0.5N:Si on AlN/sapphire for the growth of UVB LEDs,” J. Cryst. Growth 464, 185–189 (2017).
[Crossref]
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