Abstract

Molybdenum disulfide (MoS2)-based phototransistors are attractive for optical electronics in a large-scale size, such as transparent touch screens. However, most of the work done over the past decade has been on an opaque SiO2/Si wafer with a small size (micrometer to millimeter). In this work, a large-scale multilayer MoS2-based phototransistor has been fabricated on a transparent freestanding gallium nitride (GaN) wafer using a scalable chemical vapor deposition method. Due to the near lattice match and small thermal expansion mismatch between GaN and MoS2, the as-grown multilayer MoS2-on-GaN film shows high material quality in terms of low full width at half-maximum (5.16  cm1) for the E2g1 Raman mode and a high absorption coefficient (106  cm1) in the wavelength range of 405–638 nm. Under a wavelength of 405 nm at an incident power of 2 mW and applied voltage of 9 V, the fabricated MoS2-on-GaN phototransistor achieved a maximum responsivity of 17.2 A/W, a photocurrent gain of 53.6, and an external quantum efficiency of 5289%, with specific detectivity (10101012 Jones) and low noise equivalent power (10121014  W/Hz1/2) in the visible range of 405–638 nm. A typical response time of 0.1–4 s in the ambient air has also been recorded for the demonstrated MoS2-on-GaN phototransistor. Our work paves a technologic stepping stone for MoS2-based phototransistors for multifunctional transparent and touch-based optoelectronics in the future.

© 2019 Chinese Laser Press

Full Article  |  PDF Article
OSA Recommended Articles
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors

You Wu, Zhiwen Li, Kah-Wee Ang, Yuping Jia, Zhiming Shi, Zhi Huang, Wenjie Yu, Xiaojuan Sun, Xinke Liu, and Dabing Li
Photon. Res. 7(10) 1127-1133 (2019)

Bipolar phototransistor in a vertical Au/graphene/MoS2 van der Waals heterojunction with photocurrent enhancement

Jiaqi Li, Xurui Mao, Sheng Xie, Zhaoxin Geng, and Hongda Chen
Photon. Res. 8(1) 39-45 (2020)

Growth of large-area atomically thin MoS2 film via ambient pressure chemical vapor deposition

Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, and Qiaoliang Bao
Photon. Res. 3(4) 110-114 (2015)

References

  • View by:
  • |
  • |
  • |

  1. O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
    [Crossref]
  2. X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
    [Crossref]
  3. X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
    [Crossref]
  4. Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
    [Crossref]
  5. W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
    [Crossref]
  6. Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
    [Crossref]
  7. F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
    [Crossref]
  8. K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics 10, 216–226 (2016).
    [Crossref]
  9. L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
    [Crossref]
  10. Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
    [Crossref]
  11. Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
    [Crossref]
  12. S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
    [Crossref]
  13. D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
    [Crossref]
  14. X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
    [Crossref]
  15. Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
    [Crossref]
  16. W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
    [Crossref]
  17. Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
    [Crossref]
  18. K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
    [Crossref]
  19. Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
    [Crossref]
  20. Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
    [Crossref]
  21. Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
    [Crossref]
  22. G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
    [Crossref]
  23. Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
    [Crossref]
  24. B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
    [Crossref]
  25. K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
    [Crossref]
  26. K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
    [Crossref]
  27. W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
    [Crossref]
  28. S. Ghatak and A. Ghosh, “Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor,” Appl. Phys. Lett. 103, 122103 (2013).
    [Crossref]
  29. A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
    [Crossref]
  30. A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
    [Crossref]
  31. X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
    [Crossref]
  32. X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
    [Crossref]
  33. X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
    [Crossref]
  34. J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
    [Crossref]
  35. D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
    [Crossref]
  36. H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
    [Crossref]
  37. W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
    [Crossref]
  38. L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
    [Crossref]
  39. F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
    [Crossref]
  40. F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
    [Crossref]
  41. G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
    [Crossref]
  42. K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
    [Crossref]
  43. D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
    [Crossref]

2018 (1)

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

2017 (8)

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

2016 (3)

K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics 10, 216–226 (2016).
[Crossref]

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

2015 (3)

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

2014 (4)

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

2013 (5)

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

S. Ghatak and A. Ghosh, “Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor,” Appl. Phys. Lett. 103, 122103 (2013).
[Crossref]

2012 (10)

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

2011 (3)

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

2009 (2)

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

2005 (1)

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

2003 (1)

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

2001 (1)

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

2000 (1)

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Ajayan, P. M.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Allain, A.

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

Ang, K. W.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Ang, K.-W.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Ao, J.-P.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Appenzeller, J.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

Avouris, P.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Badioli, M.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Bao, Q.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Belle, B. D.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Bernechea, M.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Bhimanapati, G. R.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Birdwell, A. G.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Booth, T. J.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Botcha, V. D.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

Britnell, L.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Brivio, J.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Burke, R. A.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Cai, Y.

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Cao, P.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Casiraghi, C.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Castro Neto, A. H.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Cha, G.-B.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Chang, C. S.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, C.-S.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Chang, K. D.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, M. T.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Chang, M.-T.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Chang, Y. H.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Chen, C. H.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Chen, H.-Y.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

Chen, L.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Chen, M.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Chen, X.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Cheng, Y. J.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Cheng, Y.-B.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Chhowalla, M.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Cho, M. Y.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Choi, W.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Chu, C.-W.

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Coleman, J. N.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Crowne, F. J.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Dai, H.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Das, S.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

Davydov, A. V.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

de Arquer, F. P. G.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Della Fera, N.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Dong, B.

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

Dong, F.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Dravid, V. P.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Duan, W.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Dumcenco, D.

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

Eckmann, A.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Eda, G.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Eichfeld, S. M.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Fang, J.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Feng, Q.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Feng, X.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Ferrari, A. C.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

Freitag, M.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Fuhrer, M. S.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Fujita, T.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Galfsky, T.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

Gatti, F.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Gaudreau, L.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Geim, A. K.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Georgiou, T.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Ghatak, S.

S. Ghatak and A. Ghosh, “Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor,” Appl. Phys. Lett. 103, 122103 (2013).
[Crossref]

Ghosh, A.

S. Ghatak and A. Ghosh, “Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor,” Appl. Phys. Lett. 103, 122103 (2013).
[Crossref]

Giacometti, V.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Golizadeh-Mojarad, R.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Gorbachev, R. V.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Grigorenko, A. N.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Gu, H.

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Guo, L.

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Han, S.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

He, J.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

He, Z.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Hong, J.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Hong, S. C.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Hu, C.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

Hu, J.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Huang, J. K.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Huang, J.-K.

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Huang, L.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

Huang, Y.-S.

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

Huang, Z.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Ivanov, T. G.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Jacobsen, K. W.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Jalil, R.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Javey, A.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Jena, D.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Jha, S.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Jia, F.

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Jia, Y.

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Jiang, D.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Jiang, H.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Jiang, L.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Jin, C.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Joo, J.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Kaasbjerg, K.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Kalantar-Zadeh, K.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Kalanyan, B.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Kayci, M.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Kéna-Cohen, S.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

Khotkevich, V. V.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Kim, J.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Kim, S.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Kim, W.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Kim, Y. J.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Kis, A.

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Kita, K.

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Klier, K.

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Konar, A.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Kong, J.

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Konstantatos, G.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Koppens, F. H.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

Koppens, F. H. L.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Kuo, H.-C.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

Lai, C.-S.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Late, D. J.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Lee, C.

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

Lee, J. H.

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Lee, Y. H.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lee, Y.-H.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Lembke, D.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Li, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Li, K.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Li, L. J.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Li, L.-J.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Li, S.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Li, Y.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Li, Z.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Liang, C.-T.

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Lin, C. T.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lin, E.-C.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

Lin, F.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Lin, S.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Lin, T. W.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Lin, X.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

Lin, Y.-C.

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Lin, Y.-M.

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Ling, Y.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Liu, B.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Liu, H.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Liu, J.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Liu, K.-K.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Liu, M.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

Liu, Q.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Liu, W.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Liu, X.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Liu, Y.

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Liu, Z.

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Lopez-Sanchez, O.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

Lou, J.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Lu, G.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Lu, J.

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Lu, Y.

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Mak, K. F.

K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics 10, 216–226 (2016).
[Crossref]

Mao, N.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Mao, Z.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Matte, H. S. S. R.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Meng, Z.

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Menon, V. M.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

Miller, A. C.

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Mishchenko, A.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Morozov, S. V.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Mueller, T.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Nagashio, K.

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Najmaei, S.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Newaz, A. K. M.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Ng, R. J.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Nijhuis, C. A.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Nishimura, T.

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Novoselov, K. S.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

O’Regan, T. P.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Osmond, J.

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Ovchinnikov, D.

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

Pan, J.

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Park, K. T.

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Peng, Y.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Penumatcha, A. V.

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

Perebeinos, V.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Polini, M.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

Pop, E.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Qian, Y.

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Radenovic, A.

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Radisavljevic, B.

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

Rao, C. N. R.

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Ray, K.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Ribeiro, R. M.

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Robinson, J. A.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Ruzmetov, D.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Schedin, F.

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Shah, P. B.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Shan, J.

K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics 10, 216–226 (2016).
[Crossref]

Shi, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Smithe, K. K. H.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Song, J.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Sophia, J.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Sophia, P. J.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Sourav, A.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

Stan, G.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Strano, M. S.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Su, C.-Y.

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Sun, Y.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Sun, Z.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

Tan, W. C.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

Tang, D.

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Thygesen, K. S.

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Toriumi, A.

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Tsang, J.

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Valdes-Garcia, A.

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

Vermesh, O.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Vitiello, M. S.

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

Voiry, D.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Wang, C.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Wang, J.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Wang, J. T.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Wang, L.

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

Wang, Q.

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

Wang, Q. H.

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

Wang, Z.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Wei, J.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Wen, J.

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Wu, J.

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Xia, F.

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

Xia, X.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Xie, L.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Xiong, X.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Xu, H.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Xu, K.

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Xu, Q.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Xu, W.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Xu, Z.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Xu, Z.-Q.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Xue, Y.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Yamaguchi, H.

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

Yamashita, T.

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Yin, Z.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Yore, A. E.

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

Yu, W.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Yu, Y. C.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Yue, C.

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Zhan, Y.

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Zhang, G.

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Zhang, H.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Zhang, J.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Zhang, K.

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Zhang, M.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

Zhang, Q.

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

Zhang, W.

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Zhang, X. Q.

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Zhang, Y.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Zhang, Y. W.

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

Zhang, Y.-W.

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

Zheng, C.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Zheng, J.

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Zheng, S.

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Zhong, C.

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

Zhong, Y. L.

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

Zhu, D.

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

Zhu, Y.

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

ACS Appl. Mater. Interfaces (1)

L. Huang, W. C. Tan, L. Wang, B. Dong, C. Lee, and K.-W. Ang, “Infrared black phosphorus phototransistor with tunable responsivity and low noise equivalent power,” ACS Appl. Mater. Interfaces 9, 36130–36136 (2017).
[Crossref]

ACS Nano (7)

D. Ruzmetov, K. Zhang, G. Stan, B. Kalanyan, G. R. Bhimanapati, S. M. Eichfeld, R. A. Burke, P. B. Shah, T. P. O’Regan, F. J. Crowne, A. G. Birdwell, J. A. Robinson, A. V. Davydov, and T. G. Ivanov, “Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride,” ACS Nano 10, 3580–3588 (2016).
[Crossref]

Y. Xue, Y. Zhang, Y. Liu, H. Liu, J. Song, J. Sophia, J. Liu, Z. Xu, Q. Xu, Z. Wang, J. Zheng, Y. Liu, S. Li, and Q. Bao, “Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors,” ACS Nano 10, 573–580 (2016).
[Crossref]

Z.-Q. Xu, Y. Zhang, S. Lin, C. Zheng, Y. L. Zhong, X. Xia, Z. Li, P. J. Sophia, M. S. Fuhrer, Y.-B. Cheng, and Q. Bao, “Synthesis and transfer of large-area monolayer WS2 crystals: moving toward the recyclable use of sapphire substrates,” ACS Nano 9, 6178–6187 (2015).
[Crossref]

D. Ovchinnikov, A. Allain, Y.-S. Huang, D. Dumcenco, and A. Kis, “Electrical transport properties of single-layer WS2,” ACS Nano 8, 8174–8181 (2014).
[Crossref]

X. Liu, J. Hu, C. Yue, N. Della Fera, Y. Ling, Z. Mao, and J. Wei, “High performance field-effect transistor based on multilayer tungsten disulfide,” ACS Nano 8, 10396–10402 (2014).
[Crossref]

Z. Yin, H. Li, H. Li, L. Jiang, Y. Shi, Y. Sun, G. Lu, Q. Zhang, X. Chen, and H. Zhang, “Single-layer MoS2 phototransistors,” ACS Nano 6, 74–80 (2012).
[Crossref]

D. J. Late, B. Liu, H. S. S. R. Matte, V. P. Dravid, and C. N. R. Rao, “Hysteresis in single-layer MoS2 field effect transistors,” ACS Nano 6, 5635–5641 (2012).
[Crossref]

Adv. Funct. Mater. (2)

X. Liu, J. Wu, W. Yu, L. Chen, Z. Huang, H. Jiang, J. He, Q. Liu, Y. Lu, D. Zhu, W. Liu, P. Cao, S. Han, X. Xiong, W. Xu, J.-P. Ao, K.-W. Ang, and Z. He, “Monolayer WxMo1-xS2 grown by atmospheric pressure chemical vapor deposition: bandgap engineering and field effect transistors,” Adv. Funct. Mater. 27, 1606469 (2017).
[Crossref]

Y. Liu, Y. Cai, G. Zhang, Y.-W. Zhang, and K.-W. Ang, “Al-doped black phosphorus p-n homojunction diode for high performance photovoltaic,” Adv. Funct. Mater. 27, 1604638 (2017).
[Crossref]

Adv. Mater. (5)

W. Zhang, J. K. Huang, C. H. Chen, Y. H. Chang, Y. J. Cheng, and L. J. Li, “High-gain phototransistors based on a CVD MoS2 monolayer,” Adv. Mater. 25, 3456–3461 (2013).
[Crossref]

Y. H. Lee, X. Q. Zhang, W. Zhang, M. T. Chang, C. T. Lin, K. D. Chang, Y. C. Yu, J. T. Wang, C. S. Chang, L. J. Li, and T. W. Lin, “Synthesis of large-area MoS2 atomic layers with chemical vapor deposition,” Adv. Mater. 24, 2320–2325 (2012).
[Crossref]

Q. Feng, Y. Zhu, J. Hong, M. Zhang, W. Duan, N. Mao, J. Wu, H. Xu, F. Dong, F. Lin, C. Jin, C. Wang, J. Zhang, and L. Xie, “Growth of large‐area 2D MoS2(1‐x)Se2x semiconductor alloys,” Adv. Mater. 26, 2648–2653 (2014).
[Crossref]

W. C. Tan, Y. Cai, R. J. Ng, L. Huang, X. Feng, G. Zhang, Y. W. Zhang, C. A. Nijhuis, X. Liu, and K. W. Ang, “Few-layer black phosphorus carbide field-effect transistor via carbon doping,” Adv. Mater. 29, 1700503 (2017).
[Crossref]

W. Choi, M. Y. Cho, A. Konar, J. H. Lee, G.-B. Cha, S. C. Hong, S. Kim, J. Kim, D. Jena, and J. Joo, “High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared,” Adv. Mater. 24, 5832–5836 (2012).
[Crossref]

Adv. Opt. Mater. (1)

A. Sourav, Z. Li, Z. Huang, V. D. Botcha, C. Hu, J.-P. Ao, Y. Peng, H.-C. Kuo, J. Wu, X. Liu, and K.-W. Ang, “Large scale transparent molybdenum disulfide plasmonic photodetector using split bull eye structure,” Adv. Opt. Mater. 6, 1800461 (2018).
[Crossref]

AIP Adv. (1)

X. Liu, H. Gu, K. Li, L. Guo, D. Zhu, Y. Lu, J. Wang, H.-C. Kuo, Z. Liu, W. Liu, L. Chen, J. Fang, K.-W. Ang, K. Xu, and J.-P. Ao, “AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer,” AIP Adv. 7, 095305 (2017).
[Crossref]

Appl. Phys. Lett. (3)

X. Liu, J. He, Q. Liu, D. Tang, F. Jia, J. Wen, Y. Lu, W. Yu, D. Zhu, W. Liu, P. Cao, S. Han, J. Pan, Z. He, and K.-W. Ang, “Band alignment of HfO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy: effect of CHF3 treatment,” Appl. Phys. Lett. 107, 101601 (2015).
[Crossref]

A. E. Yore, K. K. H. Smithe, S. Jha, K. Ray, E. Pop, and A. K. M. Newaz, “Large array fabrication of high performance monolayer MoS2 photodetectors,” Appl. Phys. Lett. 111, 043110 (2017).
[Crossref]

S. Ghatak and A. Ghosh, “Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor,” Appl. Phys. Lett. 103, 122103 (2013).
[Crossref]

Chem. Lett. (1)

Y. Peng, Z. Meng, C. Zhong, J. Lu, W. Yu, Y. Jia, and Y. Qian, “Hydrothermal synthesis and characterization of single-molecular-layer MoS2 and MoSe2,” Chem. Lett. 30, 772–773 (2001).
[Crossref]

ECS J. Solid State Sci. Technol. (1)

X. Liu, H. Gu, K. Li, J. Wang, L. Wang, H.-C. Kuo, W. Liu, L. Chen, J. Fang, M. Liu, X. Lin, K. Xu, and J.-P. Ao, “GaN Schottky barrier diodes on free-standing GaN wafer,” ECS J. Solid State Sci. Technol. 6, N216–N220 (2017).
[Crossref]

J. Appl. Phys. (1)

K. Nagashio, T. Yamashita, T. Nishimura, K. Kita, and A. Toriumi, “Electrical transport properties of graphene on SiO2 with specific surface structures,” J. Appl. Phys. 110, 024513 (2011).
[Crossref]

Nano Lett. (5)

F. Xia, T. Mueller, R. Golizadeh-Mojarad, M. Freitag, Y.-M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, “Photocurrent imaging and efficient photon detection in a graphene transistor,” Nano Lett. 9, 1039–1044 (2009).
[Crossref]

W. Kim, A. Javey, O. Vermesh, Q. Wang, Y. Li, and H. Dai, “Hysteresis caused by water molecules in carbon nanotube field-effect transistors,” Nano Lett. 3, 193–198 (2003).
[Crossref]

S. Das, H.-Y. Chen, A. V. Penumatcha, and J. Appenzeller, “High performance multilayer MoS2 transistors with scandium contacts,” Nano Lett. 13, 100–105 (2013).
[Crossref]

G. Eda, H. Yamaguchi, D. Voiry, T. Fujita, M. Chen, and M. Chhowalla, “Photoluminescence from chemically exfoliated MoS2,” Nano Lett. 11, 5111–5116 (2011).
[Crossref]

K.-K. Liu, W. Zhang, Y.-H. Lee, Y.-C. Lin, M.-T. Chang, C.-Y. Su, C.-S. Chang, H. Li, Y. Shi, H. Zhang, C.-S. Lai, and L.-J. Li, “Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates,” Nano Lett. 12, 1538–1544 (2012).
[Crossref]

Nanoscale (1)

Y.-C. Lin, W. Zhang, J.-K. Huang, K.-K. Liu, Y.-H. Lee, C.-T. Liang, C.-W. Chu, and L.-J. Li, “Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization,” Nanoscale 4, 6637–6641 (2012).
[Crossref]

Nat. Nanotechnol. (6)

B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, and A. Kis, “Single-layer MoS2 transistors,” Nat. Nanotechnol. 6, 147–150 (2011).
[Crossref]

F. H. Koppens, T. Mueller, P. Avouris, A. C. Ferrari, M. S. Vitiello, and M. Polini, “Photodetectors based on graphene, other two-dimensional materials and hybrid systems,” Nat. Nanotechnol. 9, 780–793 (2014).
[Crossref]

Q. H. Wang, K. Kalantar-Zadeh, A. Kis, J. N. Coleman, and M. S. Strano, “Electronics and optoelectronics of two-dimensional transition metal dichalcogenides,” Nat. Nanotechnol. 7, 699–712 (2012).
[Crossref]

O. Lopez-Sanchez, D. Lembke, M. Kayci, A. Radenovic, and A. Kis, “Ultrasensitive photodetectors based on monolayer MoS2,” Nat. Nanotechnol. 8, 497–501 (2013).
[Crossref]

F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, “Ultrafast graphene photodetector,” Nat. Nanotechnol. 4, 839–843 (2009).
[Crossref]

G. Konstantatos, M. Badioli, L. Gaudreau, J. Osmond, M. Bernechea, F. P. G. de Arquer, F. Gatti, and F. H. L. Koppens, “Hybrid graphene-quantum dot phototransistors with ultrahigh gain,” Nat. Nanotechnol. 7, 363–368 (2012).
[Crossref]

Nat. Photonics (2)

X. Liu, T. Galfsky, Z. Sun, F. Xia, E.-C. Lin, Y.-H. Lee, S. Kéna-Cohen, and V. M. Menon, “Strong light-matter coupling in two-dimensional atomic crystals,” Nat. Photonics 9, 30–34 (2015).
[Crossref]

K. F. Mak and J. Shan, “Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides,” Nat. Photonics 10, 216–226 (2016).
[Crossref]

Phys. Rev. B (1)

K. Kaasbjerg, K. S. Thygesen, and K. W. Jacobsen, “Phonon-limited mobility in n-type single-layer MoS2 from first principles,” Phys. Rev. B 85, 115317 (2012).
[Crossref]

Proc. Natl. Acad. Sci. USA (1)

K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, and A. K. Geim, “Two-dimensional atomic crystals,” Proc. Natl. Acad. Sci. USA 102, 10451–10453 (2005).
[Crossref]

Results Phys. (1)

H. Gu, Y. Lu, D. Zhu, K. Li, S. Zheng, J. Wang, K.-W. Ang, K. Xu, and X. Liu, “High temperature study on the thermal properties of few-layer Mo0.5W0.5S2 and effects of capping layers,” Results Phys. 7, 4394–4397 (2017).
[Crossref]

Science (1)

L. Britnell, R. M. Ribeiro, A. Eckmann, R. Jalil, B. D. Belle, A. Mishchenko, Y. J. Kim, R. V. Gorbachev, T. Georgiou, S. V. Morozov, A. N. Grigorenko, A. K. Geim, C. Casiraghi, A. H. Castro Neto, and K. S. Novoselov, “Strong light-matter interactions in heterostructures of atomically thin films,” Science 340, 1311–1314 (2013).
[Crossref]

Small (1)

Y. Zhan, Z. Liu, S. Najmaei, P. M. Ajayan, and J. Lou, “Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate,” Small 8, 966–971 (2012).
[Crossref]

Surf. Sci. Spectra. (1)

J. Kong, K. T. Park, A. C. Miller, and K. Klier, “Molybdenum disulfide single crystal (0002) plane XPS spectra,” Surf. Sci. Spectra. 7, 69–74 (2000).
[Crossref]

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1.
Fig. 1. (a) Illustration of the experimental setup of CVD in this work. The Ga face of the FS GaN wafer is faced down, and ML MoS 2 is grown on the Ga surface. The growth temperature and duration time were 800°C and 5 min, respectively. (b) Raman spectra of the as-grown MoS-on-GaN sample from the four locations indicated by the arrows shown in the inset, and the letters SZU and NCTU being an abbreviation of “Shenzhen University” and “National Chiao Tung University” are clearly seen. (c) Core-level XPS spectrum of Mo 3d and S 2s of the as-grown MoS-on-GaN sample.
Fig. 2.
Fig. 2. (a) Cross-sectional TEM image of the as-grown MoS 2 -on-GaN sample. The measured MoS 2 film thickness is 5    nm , and the number of MoS 2 layers is 5 layers. (b) Effect of temperature variation on the Raman modes of A 1 g and E 2 g 1 modes of MoS 2 -on-GaN film; (c) absorbance of FS GaN, as-grown MoS 2 -on-GaN film, and the MoS 2 layer as a function of incident wavelength. The absorbance of MoS 2 could be obtained by subtracting the absorbance value of FS GaN from that of the as-grown MoS 2 -on-GaN sample.
Fig. 3.
Fig. 3. (a) Photo image of the fabricated transparent ML MoS 2 -on-GaN phototransistors; (b) 3D schematic view of the MoS 2 -on-GaN phototransistor on a transparent FS GaN wafer; (c) the current ratio of light/dark for the fabricated MoS 2 -on-GaN phototransistors is 10 1 10 2 at an applied voltage of 10 V and incident power of 10 mW with a laser spot diameter of 2 mm.
Fig. 4.
Fig. 4. Photoresponsivity R under three laser wavelengths of (a) 638, (b) 532, and (c) 405 nm plotted as a function of incident laser power. (d) Photoresponsivity R as a function of applied voltage for three laser wavelengths (638, 532, and 405 nm) at a laser power of 2 mW; (e) photoconductive gain G and EQE as a function of the incident wavelength with an applied voltage of 9 V and power of 2 mW; (f) specific detectivity D and NEP as a function of the incident wavelength with an applied voltage of 9 V and power of 2 mW.
Fig. 5.
Fig. 5. (a) Photocurrent as a function of time under the alternative dark and illumination conditions at different laser wavelengths (638, 532, and 405 nm) with a fixed incident power of 6 mW and a fixed voltage of 3 V; (b) the rise and fall times are taken from 10% to 90% of the maximum photocurrent and from 90% to 10% of the maximum photocurrent, respectively. (c) Rise time t rise and (d) fall time t fall as a function of incident power for three different laser illuminations (638, 532, and 405 nm) with a fixed voltage of 3 V.

Metrics