Abstract

Semiconductor UV photonics research has emerged as one of the most heavily invested areas among semiconductor photonics research due to numerous crucial applications such as sterilization, sensing, curing, and communication. The feature issue disseminates nine timely original research and two review papers from leading research groups and companies, covering most frontiers of the semiconductor UV photonics research, from epitaxy, device physics and design, nanostructures, fabrication, packaging, reliability, and application for light-emitting diodes, laser diodes, and photodetectors.

© 2019 Chinese Laser Press

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References

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  1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
    [Crossref]
  2. F. Jiang, J. Zhang, L. Xu, J. Ding, G. Wang, X. Wu, X. Wang, C. Mo, Z. Quan, X. Guo, C. Zheng, S. Pan, and J. Liu, “Efficient InGaN-based yellow-light-emitting diodes,” Photon. Res. 7, 144–148 (2019).
    [Crossref]
  3. M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
    [Crossref]
  4. Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
    [Crossref]
  5. C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, and M. Kneissl, “MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs,” Photon. Res. 7, B7–B11 (2019).
    [Crossref]
  6. C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, and A. Winkelmann, “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films,” Photon. Res. 7, B73–B82 (2019).
    [Crossref]
  7. W. Xu, Y. Shi, F. Ren, D. Zhou, L. Su, Q. Liu, L. Cheng, J. Ye, D. Chen, R. Zhang, Y. Zheng, and H. Lu, “Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection,” Photon. Res. 7, B48–B54 (2019).
    [Crossref]
  8. J. Wang, M. Feng, R. Zhou, Q. Sun, J. Liu, Y. Huang, Y. Zhou, H. Gao, X. Zheng, M. Ikeda, and H. Yang, “GaN-based ultraviolet microdisk laser diode grown on Si,” Photon. Res. 7, B32–B35 (2019).
    [Crossref]
  9. Y. Nagasawa and A. Hirano, “Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes,” Photon. Res. 7, B55–B65 (2019).
    [Crossref]
  10. X. He, E. Xie, M. S. Islim, A. A. Purwita, J. J. D. McKendry, E. Gu, H. Haas, and M. D. Dawson, “1  Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262  nm,” Photon. Res. 7, B41–B47 (2019).
    [Crossref]
  11. Z.-H. Zhang, J. Kou, S.-W. H. Chen, H. Shao, J. Che, C. Chu, K. Tian, Y. Zhang, W. Bi, and H.-C. Kuo, “Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes,” Photon. Res. 7, B1–B6 (2019).
    [Crossref]
  12. X. Liu, K. Mashooq, D. A. Laleyan, E. T. Reid, and Z. Mi, “AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics,” Photon. Res. 7, B12–B23 (2019).
    [Crossref]
  13. A. M. Armstrong, B. A. Klein, A. A. Allerman, A. G. Baca, M. H. Crawford, J. Podkaminer, C. R. Perez, M. P. Siegal, E. A. Douglas, V. M. Abate, and F. Leonard, “Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate,” Photon. Res. 7, B24–B31 (2019).
    [Crossref]
  14. L. Zhang, Y. Guo, J. Yan, Q. Wu, Y. Lu, Z. Wu, W. Gu, X. Wei, J. Wang, and J. Li, “Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array,” Photon. Res. 7, B66–B72 (2019).
    [Crossref]
  15. J. Ruschel, J. Glaab, B. Beidoun, N. L. Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, and M. Kneissl, “Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes,” Photon. Res. 7, B36–B40 (2019).
    [Crossref]

2019 (14)

F. Jiang, J. Zhang, L. Xu, J. Ding, G. Wang, X. Wu, X. Wang, C. Mo, Z. Quan, X. Guo, C. Zheng, S. Pan, and J. Liu, “Efficient InGaN-based yellow-light-emitting diodes,” Photon. Res. 7, 144–148 (2019).
[Crossref]

Z.-H. Zhang, J. Kou, S.-W. H. Chen, H. Shao, J. Che, C. Chu, K. Tian, Y. Zhang, W. Bi, and H.-C. Kuo, “Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes,” Photon. Res. 7, B1–B6 (2019).
[Crossref]

C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, and M. Kneissl, “MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs,” Photon. Res. 7, B7–B11 (2019).
[Crossref]

X. Liu, K. Mashooq, D. A. Laleyan, E. T. Reid, and Z. Mi, “AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics,” Photon. Res. 7, B12–B23 (2019).
[Crossref]

A. M. Armstrong, B. A. Klein, A. A. Allerman, A. G. Baca, M. H. Crawford, J. Podkaminer, C. R. Perez, M. P. Siegal, E. A. Douglas, V. M. Abate, and F. Leonard, “Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate,” Photon. Res. 7, B24–B31 (2019).
[Crossref]

J. Wang, M. Feng, R. Zhou, Q. Sun, J. Liu, Y. Huang, Y. Zhou, H. Gao, X. Zheng, M. Ikeda, and H. Yang, “GaN-based ultraviolet microdisk laser diode grown on Si,” Photon. Res. 7, B32–B35 (2019).
[Crossref]

J. Ruschel, J. Glaab, B. Beidoun, N. L. Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, and M. Kneissl, “Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes,” Photon. Res. 7, B36–B40 (2019).
[Crossref]

X. He, E. Xie, M. S. Islim, A. A. Purwita, J. J. D. McKendry, E. Gu, H. Haas, and M. D. Dawson, “1  Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262  nm,” Photon. Res. 7, B41–B47 (2019).
[Crossref]

W. Xu, Y. Shi, F. Ren, D. Zhou, L. Su, Q. Liu, L. Cheng, J. Ye, D. Chen, R. Zhang, Y. Zheng, and H. Lu, “Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection,” Photon. Res. 7, B48–B54 (2019).
[Crossref]

Y. Nagasawa and A. Hirano, “Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes,” Photon. Res. 7, B55–B65 (2019).
[Crossref]

L. Zhang, Y. Guo, J. Yan, Q. Wu, Y. Lu, Z. Wu, W. Gu, X. Wei, J. Wang, and J. Li, “Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array,” Photon. Res. 7, B66–B72 (2019).
[Crossref]

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, and A. Winkelmann, “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films,” Photon. Res. 7, B73–B82 (2019).
[Crossref]

M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
[Crossref]

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

1989 (1)

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Abate, V. M.

Akasaki, I.

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Alasmari, A.

Allerman, A. A.

Amano, H.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
[Crossref]

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Armstrong, A. M.

Avis, W.

Baca, A. G.

Beidoun, B.

Bi, W.

Bruckbauer, J.

Che, J.

Chen, D.

Chen, S.-W. H.

Cheng, L.

Chu, C.

Coulon, P.-M.

Crawford, M. H.

Dawson, M. D.

Ding, J.

Douglas, E. A.

Edwards, P. R.

Einfeldt, S.

Enslin, J.

Feng, M.

Gao, H.

Glaab, J.

Gong, Y.

Gu, E.

Gu, W.

Guo, X.

Guo, Y.

Guttmann, M.

Haas, H.

Hagedorn, S.

Han, J.

M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
[Crossref]

He, X.

Hiramatsu, K.

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Hirano, A.

Hourahine, B.

Huang, Y.

Ikeda, M.

Islim, M. S.

Jiang, F.

Jiu, L.

Johnston, R.

Kito, M.

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Klein, B. A.

Knauer, A.

Kneissl, M.

Kolbe, T.

Kou, J.

Kraeusel, S.

Kueller, V.

Kuhn, C.

Kuo, H.-C.

Kusch, G.

Kushimoto, M.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Laleyan, D. A.

Leonard, F.

Li, J.

Liu, J.

Liu, Q.

Liu, X.

Lu, H.

Lu, Y.

Martin, R. W.

Mashooq, K.

McKendry, J. J. D.

Mehnke, F.

Mi, Z.

Mo, C.

Nagasawa, Y.

Naresh-Kumar, G.

Nouf-Allehiani, M.

Pan, S.

Parbrook, P. J.

Pascal, E.

Perez, C. R.

Ploch, N. L.

Podkaminer, J.

Purwita, A. A.

Quan, Z.

Rass, J.

Reid, E. T.

Ren, F.

Ruschel, J.

Sakai, T.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Sasaoka, C.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Schowalter, L. J.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Seong, T.-Y.

M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
[Crossref]

Shao, H.

Shi, Y.

Shields, P. A.

Siegal, M. P.

Smith, M. D.

Smith, R. M.

Spasevski, L.

Su, L.

Sugiyama, N.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Sulmoni, L.

Sun, Q.

Susilo, N.

Thomson, D.

Tian, K.

Trager-Cowan, C.

Vespucci, S.

Walde, S.

Wang, G.

Wang, J.

Wang, T.

Wang, X.

Wei, X.

Wernicke, T.

Weyers, M.

Winkelmann, A.

Wu, Q.

Wu, X.

Wu, Z.

Xie, E.

Xu, L.

Xu, W.

Yan, J.

Yang, H.

Ye, J.

Zhang, J.

Zhang, L.

Zhang, R.

Zhang, Y.

Zhang, Z.

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Zhang, Z.-H.

Zheng, C.

Zheng, X.

Zheng, Y.

Zhou, D.

Zhou, R.

Zhou, Y.

Appl. Phys. Express (1)

Z. Zhang, M. Kushimoto, T. Sakai, N. Sugiyama, L. J. Schowalter, C. Sasaoka, and H. Amano, “A 271.8  nm deep-ultraviolet laser diode for room temperature operation,” Appl. Phys. Express 12, 124003 (2019).
[Crossref]

Japanese J. Appl. Phys. (1)

H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, “P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI),” Japanese J. Appl. Phys. 28, L2112–L2114 (1989).
[Crossref]

Nat. Photonics (1)

M. Kneissl, T.-Y. Seong, J. Han, and H. Amano, “The emergence and prospects of deep-ultraviolet light-emitting diode technologies,” Nat. Photonics 13, 233–244 (2019).
[Crossref]

Photon. Res. (12)

F. Jiang, J. Zhang, L. Xu, J. Ding, G. Wang, X. Wu, X. Wang, C. Mo, Z. Quan, X. Guo, C. Zheng, S. Pan, and J. Liu, “Efficient InGaN-based yellow-light-emitting diodes,” Photon. Res. 7, 144–148 (2019).
[Crossref]

C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, and M. Kneissl, “MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs,” Photon. Res. 7, B7–B11 (2019).
[Crossref]

C. Trager-Cowan, A. Alasmari, W. Avis, J. Bruckbauer, P. R. Edwards, B. Hourahine, S. Kraeusel, G. Kusch, R. Johnston, G. Naresh-Kumar, R. W. Martin, M. Nouf-Allehiani, E. Pascal, L. Spasevski, D. Thomson, S. Vespucci, P. J. Parbrook, M. D. Smith, J. Enslin, F. Mehnke, M. Kneissl, C. Kuhn, T. Wernicke, S. Hagedorn, A. Knauer, V. Kueller, S. Walde, M. Weyers, P.-M. Coulon, P. A. Shields, Y. Zhang, L. Jiu, Y. Gong, R. M. Smith, T. Wang, and A. Winkelmann, “Scanning electron microscopy as a flexible technique for investigating the properties of UV-emitting nitride semiconductor thin films,” Photon. Res. 7, B73–B82 (2019).
[Crossref]

W. Xu, Y. Shi, F. Ren, D. Zhou, L. Su, Q. Liu, L. Cheng, J. Ye, D. Chen, R. Zhang, Y. Zheng, and H. Lu, “Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection,” Photon. Res. 7, B48–B54 (2019).
[Crossref]

J. Wang, M. Feng, R. Zhou, Q. Sun, J. Liu, Y. Huang, Y. Zhou, H. Gao, X. Zheng, M. Ikeda, and H. Yang, “GaN-based ultraviolet microdisk laser diode grown on Si,” Photon. Res. 7, B32–B35 (2019).
[Crossref]

Y. Nagasawa and A. Hirano, “Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes,” Photon. Res. 7, B55–B65 (2019).
[Crossref]

X. He, E. Xie, M. S. Islim, A. A. Purwita, J. J. D. McKendry, E. Gu, H. Haas, and M. D. Dawson, “1  Gbps free-space deep-ultraviolet communications based on III-nitride micro-LEDs emitting at 262  nm,” Photon. Res. 7, B41–B47 (2019).
[Crossref]

Z.-H. Zhang, J. Kou, S.-W. H. Chen, H. Shao, J. Che, C. Chu, K. Tian, Y. Zhang, W. Bi, and H.-C. Kuo, “Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes,” Photon. Res. 7, B1–B6 (2019).
[Crossref]

X. Liu, K. Mashooq, D. A. Laleyan, E. T. Reid, and Z. Mi, “AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics,” Photon. Res. 7, B12–B23 (2019).
[Crossref]

A. M. Armstrong, B. A. Klein, A. A. Allerman, A. G. Baca, M. H. Crawford, J. Podkaminer, C. R. Perez, M. P. Siegal, E. A. Douglas, V. M. Abate, and F. Leonard, “Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with a nanodot-based floating gate,” Photon. Res. 7, B24–B31 (2019).
[Crossref]

L. Zhang, Y. Guo, J. Yan, Q. Wu, Y. Lu, Z. Wu, W. Gu, X. Wei, J. Wang, and J. Li, “Deep ultraviolet light-emitting diodes based on a well-ordered AlGaN nanorod array,” Photon. Res. 7, B66–B72 (2019).
[Crossref]

J. Ruschel, J. Glaab, B. Beidoun, N. L. Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, and M. Kneissl, “Current-induced degradation and lifetime prediction of 310  nm ultraviolet light-emitting diodes,” Photon. Res. 7, B36–B40 (2019).
[Crossref]

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