Abstract

In this work, TeO0.7 thin films were prepared by the reactive magnetron-controlling sputtering method. Complex gray-scale patterns were successfully fabricated on TeO0.7 thin films through the laser direct writing method. The structural origin of TeO0.7 thin film was investigated for gray-scale pattern formation. It is found that multiple gray-scale levels are dependent on the “virtual” bandgap energy of TeO0.7 thin films. The bandgap energy changes lead to refractive index and reflectivity difference. Thus, gray-scale tones can be formed. By accurately controlling laser energy, various “virtual” bandgaps can be generated in TeO0.7 thin films, and colorful gray-scale levels can be formed. Experimental results indicate that TeO0.7 thin film can be used as micro/nano image writing material.

© 2016 Chinese Laser Press

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References

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  5. J. Zhang, J. Miao, C. Guo, Y. Tian, Y. Wang, and Q. Liu, “Micro-optical elements fabricated by metal-transparent-metallic-oxides gray-scale photomasks,” Appl. Opt. 51, 6606–6611 (2012).
    [Crossref]
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    [Crossref]
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    [Crossref]
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2015 (2)

2014 (1)

2013 (3)

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).
[Crossref]

E. R. Shaaban, “Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry,” J. Alloys Compd. 563, 274–279 (2013).
[Crossref]

2012 (2)

H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).
[Crossref]

J. Zhang, J. Miao, C. Guo, Y. Tian, Y. Wang, and Q. Liu, “Micro-optical elements fabricated by metal-transparent-metallic-oxides gray-scale photomasks,” Appl. Opt. 51, 6606–6611 (2012).
[Crossref]

2011 (3)

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).
[Crossref]

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

2009 (4)

J. Liu and J. Wei, “Optical nonlinear absorption characteristics of AgInSbTe phase change thin films,” J. Appl. Phys. 106, 083112 (2009).
[Crossref]

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

C. F. Guo, S. Cao, P. Jiang, Y. Fang, J. Zhang, Y. Fan, Y. Wang, W. Xu, Z. Zhao, and Q. Liu, “Gray-scale photomask fabricated by laser direct writing in nano-films,” Opt. Express 17, 19981–19987 (2009).
[Crossref]

A. Kovalskiy, “Chalcogenide glass e-beam and photoresists for ultrathin gray-scale patterning,” J. Micro/Nanolithogr. MEMS MOEMS 8, 043012 (2009).
[Crossref]

2007 (1)

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

2005 (1)

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

2004 (2)

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

S. Senkader and C. D. Wright, “Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices,” J. Appl. Phys. 95, 504–511 (2004).
[Crossref]

1994 (1)

I. Podolesheva, “Thermally induced changes in TeOx thin layers,” J. Vac. Sci. Technol. A 12, 393–398 (1994).
[Crossref]

1989 (1)

K. Kimura, “Optical recording materials based on TeOx films,” Jpn. J. Appl. Phys. 28, 810–813 (1989).
[Crossref]

1988 (1)

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

1986 (1)

W. Y. Lee, “Nanosecond pulsed laser-induced segregation of Te in TeOx films,” J. Vac. Sci. Technol. A 4, 2988–2992 (1986).
[Crossref]

1983 (1)

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Abe, S.

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

Akahira, N.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Akola, J.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Aristizabal, S. L.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Byung-ki, C.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Cao, S.

Chen, J. P.

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

Cirino, G. A.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Deng, C.

C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).
[Crossref]

Dillon, T.

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

Donghwan, K.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Dwivedi, P. K.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Fan, Y.

Fang, Y.

Geng, Y.

C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).
[Crossref]

H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).
[Crossref]

Giulio, M. D.

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

Guo, C.

Guo, C. F.

Honma, T.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Hospital, M.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Hsu, C. C.

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

Hyun Seok, L.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Ikenaga, E.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Ito, E.

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

Jeng, T. R.

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

Jeung-hyun, J.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Jiang, P.

Jones, R. O.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Katepalli, H.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Kawaguchi, Y.

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

Kimura, K.

K. Kimura, “Optical recording materials based on TeOx films,” Jpn. J. Appl. Phys. 28, 810–813 (1989).
[Crossref]

Kobayashi, K.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Kohara, S.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Kojima, R.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Kovalskiy, A.

A. Kovalskiy, “Chalcogenide glass e-beam and photoresists for ultrathin gray-scale patterning,” J. Micro/Nanolithogr. MEMS MOEMS 8, 043012 (2009).
[Crossref]

Lee, W. Y.

W. Y. Lee, “Nanosecond pulsed laser-induced segregation of Te in TeOx films,” J. Vac. Sci. Technol. A 4, 2988–2992 (1986).
[Crossref]

Li, H.

H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).
[Crossref]

Lin, J.

Liu, C. P.

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

Liu, J.

J. Liu and J. Wei, “Optical nonlinear absorption characteristics of AgInSbTe phase change thin films,” J. Appl. Phys. 106, 083112 (2009).
[Crossref]

Liu, Q.

Madou, M. J.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Mansano, R. D.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Martinez-Duarte, R.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Matsunaga, T.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Miao, J.

Micocci, G.

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

Montagnoli, A. N.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Murakowski, J.

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

Nakamura, S.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Nishiuchi, K.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Ohno, E.

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

Ohta, T.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Podolesheva, I.

I. Podolesheva, “Thermally induced changes in TeOx thin layers,” J. Vac. Sci. Technol. A 12, 393–398 (1994).
[Crossref]

Prather, D.

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

Rammohan, A.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Rella, R.

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

Rubert, J. B.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Senkader, S.

S. Senkader and C. D. Wright, “Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices,” J. Appl. Phys. 95, 504–511 (2004).
[Crossref]

Shaaban, E. R.

E. R. Shaaban, “Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry,” J. Alloys Compd. 563, 274–279 (2013).
[Crossref]

Sharma, A.

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

Sobrinho, A. A.

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Sure, A.

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

Suyoun, L.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Taek Sung, L.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Takata, M.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Takenaga, M.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Tepore, A.

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

Tian, Y.

Tomiyama, M.

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

Wang, R.

Wang, Y.

Wei, J.

Won Mok, K.

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

Wright, C. D.

S. Senkader and C. D. Wright, “Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices,” J. Appl. Phys. 95, 504–511 (2004).
[Crossref]

Wu, Y.

C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).
[Crossref]

H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).
[Crossref]

Xu, W.

Yamada, N.

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Yamashita, T.

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

Zhang, J.

Zhang, K.

Zhang, X.

Zhao, Z.

Appl. Opt. (1)

Appl. Phys. A (2)

H. Li, Y. Geng, and Y. Wu, “Selective etching characteristics of the AgInSbTe phase-change film in laser thermal lithography,” Appl. Phys. A 107, 221–225 (2012).
[Crossref]

C. Deng, Y. Geng, and Y. Wu, “Selective wet etching of Ge2Sb2Te5 phase-change thin films in thermal lithography with tetramethylammonium,” Appl. Phys. A 104, 1091–1097 (2011).
[Crossref]

Chin. Opt. Lett. (1)

J. Alloys Compd. (2)

C. P. Liu, C. C. Hsu, T. R. Jeng, and J. P. Chen, “Enhancing nanoscale patterning on Ge-Sb–Sn-O inorganic resist film by introducing oxygen during blue laser-induced thermal lithography,” J. Alloys Compd. 488, 190–194 (2009).
[Crossref]

E. R. Shaaban, “Optical constants and fitted transmittance spectra of varies thickness of polycrystalline ZnSe thin films in terms of spectroscopic ellipsometry,” J. Alloys Compd. 563, 274–279 (2013).
[Crossref]

J. Appl. Phys. (3)

M. Takenaga, N. Yamada, K. Nishiuchi, N. Akahira, T. Ohta, S. Nakamura, and T. Yamashita, “TeOx thin films for an optical disc memory,” J. Appl. Phys. 54, 5376–5380 (1983).
[Crossref]

S. Senkader and C. D. Wright, “Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices,” J. Appl. Phys. 95, 504–511 (2004).
[Crossref]

J. Liu and J. Wei, “Optical nonlinear absorption characteristics of AgInSbTe phase change thin films,” J. Appl. Phys. 106, 083112 (2009).
[Crossref]

J. Micro/Nanolith. MEMS MOEMS (1)

T. Dillon, A. Sure, J. Murakowski, and D. Prather, “Continuous-tone gray-scale mask fabrication using high-energy-beam-sensitive glass,” J. Micro/Nanolith. MEMS MOEMS 3, 550–554 (2004).
[Crossref]

J. Micro/Nanolithogr. MEMS MOEMS (1)

A. Kovalskiy, “Chalcogenide glass e-beam and photoresists for ultrathin gray-scale patterning,” J. Micro/Nanolithogr. MEMS MOEMS 8, 043012 (2009).
[Crossref]

J. Vac. Sci. Technol. A (3)

M. D. Giulio, G. Micocci, R. Rella, and A. Tepore, “Reactively sputtered TeOx thin films for optical recording systems,” J. Vac. Sci. Technol. A 6, 243–245 (1988).
[Crossref]

W. Y. Lee, “Nanosecond pulsed laser-induced segregation of Te in TeOx films,” J. Vac. Sci. Technol. A 4, 2988–2992 (1986).
[Crossref]

I. Podolesheva, “Thermally induced changes in TeOx thin layers,” J. Vac. Sci. Technol. A 12, 393–398 (1994).
[Crossref]

Jpn. J. Appl. Phys. (3)

L. Hyun Seok, C. Byung-ki, L. Taek Sung, J. Jeung-hyun, L. Suyoun, K. Won Mok, and K. Donghwan, “Origin of nonlinear optical characteristics of crystalline Ge-Sb–Te thin films for possible superresolution effects,” Jpn. J. Appl. Phys. 46, L277–L279 (2007).
[Crossref]

E. Ito, Y. Kawaguchi, M. Tomiyama, S. Abe, and E. Ohno, “TeOx-based film for heat-mode inorganic photoresist mastering,” Jpn. J. Appl. Phys. 44, 3574–3577 (2005).
[Crossref]

K. Kimura, “Optical recording materials based on TeOx films,” Jpn. J. Appl. Phys. 28, 810–813 (1989).
[Crossref]

Nat. Mater. (1)

T. Matsunaga, J. Akola, S. Kohara, T. Honma, K. Kobayashi, E. Ikenaga, R. O. Jones, N. Yamada, M. Takata, and R. Kojima, “From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials,” Nat. Mater. 10, 129–134 (2011).
[Crossref]

Opt. Eng. (1)

S. L. Aristizabal, G. A. Cirino, A. N. Montagnoli, A. A. Sobrinho, J. B. Rubert, M. Hospital, and R. D. Mansano, “Microlens array fabricated by a low-cost gray-scale lithography maskless system,” Opt. Eng. 52, 125101 (2013).
[Crossref]

Opt. Express (2)

Photon. Res. (1)

Proc. SPIE (1)

C. Deng, Y. Geng, and Y. Wu, “XPS study on the selective wet etching mechanism of GeSbTe phase change thin films with tetramethylammonium hydroxide,” Proc. SPIE 8782, 87820N (2013).
[Crossref]

Sens. Actuators B Chem. (1)

A. Rammohan, P. K. Dwivedi, R. Martinez-Duarte, H. Katepalli, M. J. Madou, and A. Sharma, “One-step maskless gray-scale lithography for the fabrication of 3-dimensional structures in SU-8,” Sens. Actuators B Chem. 153, 125–134 (2011).
[Crossref]

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Figures (9)

Fig. 1.
Fig. 1. XRD patterns of TeOx thin film with various O2 gas flows.
Fig. 2.
Fig. 2. (a) XPS of TeOx thin film with O2 gas flow of 1.2 sccm. (b) Depth profile of O/Te ratio in TeOx thin film by XPS measurement.
Fig. 3.
Fig. 3. Dependence of reflective power at 658 nm wavelength on temperature in as-deposited TeO0.7 thin film, where the heat rate is 5°C/min and Ar gas as protection gas at heating process.
Fig. 4.
Fig. 4. XPS of Te 3d states in TeO0.7 thin film with different energy densities.
Fig. 5.
Fig. 5. XRD patterns of TeO0.7 thin film by different laser energy irradiations.
Fig. 6.
Fig. 6. Plots of (a) refractive index and (b) extinction coefficient values in the TeO0.7 thin films for various laser energy irradiations.
Fig. 7.
Fig. 7. (a) Plot of (αhν)2 versus hν for TeO0.7 thin film with various laser energy irradiations. (b) Dependence of laser energy on “virtual” bandgap energy in TeO0.7 thin films.
Fig. 8.
Fig. 8. Reflectivity spectra of TeO0.7 thin film irradiated by various laser energy densities. The inset is gray-scale tones.
Fig. 9.
Fig. 9. Recording images in TeO0.7 thin film.

Equations (1)

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αhν=B(hνEg)η,

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