Abstract

This paper presents a study of optical properties of two series of PECVD deposited planar a-Si:H/a-SiNx:H multilayers that are differently arranged. The first series design is symmetric consisting of samples with equidistant a-Si:H and a-SiNx:H sublayers of increasing thickness. In the second asymmetric series the thickness of a-SiNx:H sublayers remains constant and the thickness of a-Si:H sublayers changes to represent materials with changing a-Si:H/a-SiNx:H content ratio. From transmittance measurements refractive indices, absorption coefficients and optical band gaps were extracted and compared. The importance of the knowledge of wavelength-dependent refractive indices and absorption coefficients was demonstrated in the calculations of the absorptance under the Yablonovitch limit and of total relative absorbed solar energy. The total absorbed solar energy was commented with respect to a specific multilayer design.

© 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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    [Crossref]
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2019 (2)

I. Guler, “Optical and structural characterization of silicon nitride thin films deposited by PECVD,” Mater. Sci. Eng., B 246, 21–26 (2019).
[Crossref]

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

2018 (3)

J. C. C. Mak, W. D. Sacher, H. Ying, X. Luo, P. G.-Q. Lo, and J. K. S. Poon, “Multi-layer silicon nitride-on-silicon polarization-independent grating couplers,” Opt. Express 26(23), 30623–30633 (2018).
[Crossref]

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

H. J. El-Khozondar, R. J. El-Khozondar, M. M. Shabat, and D. M. Schaadt, “Solar cell with multilayer structure based on nanoparticles composite,” Optik 166, 127–131 (2018).
[Crossref]

2017 (3)

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
[Crossref]

J. Müllerová and P. Šutta, “On some ambiguities of the absorption edge and optical band gaps of amorphous and polycrystalline semiconductors,” Communications 19(3), 9–15 (2017).

R. S. Dubey, K. Jhansirani, and S. Singh, “Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating,” Results Phys. 7, 77–81 (2017).
[Crossref]

2016 (2)

O. Isabella, R. Vismara, A. Ingenito, N. Rezaei, and M. Zeman, “Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells,” Opt. Express 24(6), A708–A719 (2016).
[Crossref]

S. Yamada, M. Konagai, and S. Miyajima, “Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells,” Jpn. J. Appl. Phys. 55(4S), 04ES06 (2016).
[Crossref]

2015 (5)

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

S. Abdelatif, K. Kirah, R. Ghannam, A. S. G. Khalil, and W. Anis, “Enhancing the absorption capabilities of thin-film solar cells using sandwiched light trapping structures,” Appl. Opt. 54(17), 5534–5541 (2015).
[Crossref]

X. Ziang, L. Shifeng, Q. Laixiang, P. Shuping, W. We, Y. Yu, Y. Li, C. Zhijian, W. Shufeng, D. Honglin, Y. Minghui, and G. G. Qin, “Refractive index and extinction coefficient of CH3NH3PbI3 studied by spectroscopic ellipsometry,” Opt. Mater. Express 5(1), 29–43 (2015).
[Crossref]

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
[Crossref]

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

2014 (3)

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
[Crossref]

A. Ingenito, O. Isabella, and M. Zeman, “Experimental demonstration of 4n2 classical absorption limit in nanotextured ultrathin solar cells with dielectric omnidirectional back reflector,” ACS Photonics 1(3), 270–278 (2014).
[Crossref]

2013 (3)

2012 (2)

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

2011 (2)

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

C. R. Simovski, “On electromagnetic characterization and homogenization of nanostructured metamaterials,” J. Opt. 13(1), 013001 (2011).
[Crossref]

2010 (2)

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
[Crossref]

2009 (4)

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

J. Müllerová, V. Vavruňková, and P. Šutta, “Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects,” Cent. Eur. J. Phys. 7(2), 315–320 (2009).
[Crossref]

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

2008 (1)

J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

2007 (1)

T. M. Mok and S. K. O’Leary, “The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots,” J. Appl. Phys. 102(11), 113525 (2007).
[Crossref]

2006 (1)

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

2002 (2)

A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
[Crossref]

M. A. Green, “Lambertian light trapping in textured solar cells and light-emitting diodes: Analytical Solutions,” Prog. Photovolt: Res. Appl. 10(4), 235–241 (2002).
[Crossref]

1996 (1)

G. E. Jellison and F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69(3), 371–373 (1996) and erratum Appl. Phys. Lett. 69, 2137 (1996).
[Crossref]

1982 (1)

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar-cells,” IEEE Trans. Electron Devices 29(2), 300–305 (1982).
[Crossref]

Abdelatif, S.

Ab-Rahman, M. S.

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

Andreani, L. C.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Andryieuski, A.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Anis, W.

Atwater, H. A.

Ballarini, V.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Ballutaud, D.

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

Banerjee, C.

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
[Crossref]

Bartal, G.

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
[Crossref]

Boriskina, S. V.

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

Bruno, G.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Burresi, M.

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
[Crossref]

Butler, K.

M. Lamers, K. Butler, P. E. Vullum, J. Harding, and A. Weeber, “Characterization of a-SiN:H layer: Bulk properties, interface with Si and solar cell efficiency,” Phys. Stat. Sol. A 210(4), 658–668 (2013).
[Crossref]

Callahan, D.

Calta, P.

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Casale, M.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Charifi, H.

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

Chen, G.

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

Cody, G. D.

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar-cells,” IEEE Trans. Electron Devices 29(2), 300–305 (1982).
[Crossref]

Collins, R. W.

A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
[Crossref]

Cui, Y.

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

Datta, S. K.

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
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A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
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A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
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Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
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Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
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H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
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C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
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Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Isabella, O.

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A. Ingenito, O. Isabella, and M. Zeman, “Experimental demonstration of 4n2 classical absorption limit in nanotextured ultrathin solar cells with dielectric omnidirectional back reflector,” ACS Photonics 1(3), 270–278 (2014).
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M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
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M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
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Jäger, K.

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
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Jellison, G. E.

G. E. Jellison and F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69(3), 371–373 (1996) and erratum Appl. Phys. Lett. 69, 2137 (1996).
[Crossref]

Jensen, F.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Jhansirani, K.

R. S. Dubey, K. Jhansirani, and S. Singh, “Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating,” Results Phys. 7, 77–81 (2017).
[Crossref]

Kamel, A.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Kaminer, I.

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
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Kaminski, A.

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
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Kato, I.

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

Kerdiles, S.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Khalil, A. S. G.

Kirah, K.

Konagai, M.

S. Yamada, M. Konagai, and S. Miyajima, “Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells,” Jpn. J. Appl. Phys. 55(4S), 04ES06 (2016).
[Crossref]

Krc, J.

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

Laixiang, Q.

Lamers, M.

M. Lamers, K. Butler, P. E. Vullum, J. Harding, and A. Weeber, “Characterization of a-SiN:H layer: Bulk properties, interface with Si and solar cell efficiency,” Phys. Stat. Sol. A 210(4), 658–668 (2013).
[Crossref]

Lavrinenko, A. V.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Lelièvre, J.-F.

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

Lemiti, M.

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

Letartre, X.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Lettieri, S.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Li, Y.

Liscidini, M.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Liu, V.

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

Lo, P. G.-Q.

Losurdo, M.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Luo, X.

Luxembourg, S. L.

M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
[Crossref]

Maddalena, P.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Mak, J. C. C.

Malhouitre, S.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Malureanu, R.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Mathew, M.

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

Medlín, R.

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Mestaza, S. M.

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

Minghui, Y.

Mitra, S.

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
[Crossref]

Miyajima, S.

S. Yamada, M. Konagai, and S. Miyajima, “Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells,” Jpn. J. Appl. Phys. 55(4S), 04ES06 (2016).
[Crossref]

Modine, F. A.

G. E. Jellison and F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69(3), 371–373 (1996) and erratum Appl. Phys. Lett. 69, 2137 (1996).
[Crossref]

Mok, T. M.

T. M. Mok and S. K. O’Leary, “The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots,” J. Appl. Phys. 102(11), 113525 (2007).
[Crossref]

Monat, C.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Müllerová, J.

J. Müllerová and P. Šutta, “On some ambiguities of the absorption edge and optical band gaps of amorphous and polycrystalline semiconductors,” Communications 19(3), 9–15 (2017).

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
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J. Müllerová, V. Vavruňková, and P. Šutta, “Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects,” Cent. Eur. J. Phys. 7(2), 315–320 (2009).
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J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Netrvalová, M.

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

O’Leary, S. K.

T. M. Mok and S. K. O’Leary, “The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots,” J. Appl. Phys. 102(11), 113525 (2007).
[Crossref]

Olivier, S.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Oxenløwe, L. K.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
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Palais, O.

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

Panchal, A. K.

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

Pearce, J. M.

A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
[Crossref]

Plotnik, Y.

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
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Poon, J. K. S.

Pratesi, F.

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
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Prušáková, L.

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

Pu, M.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Qin, G. G.

Rabaud, W.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Rai, D. K.

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

Rezaei, N.

Ricciardi, C.

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

Roboli, F.

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
[Crossref]

Roques, S.

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

Sacher, W. D.

Saha, H.

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
[Crossref]

Santbergen, R.

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

Savková, J.

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Schaadt, D. M.

H. J. El-Khozondar, R. J. El-Khozondar, M. M. Shabat, and D. M. Schaadt, “Solar cell with multilayer structure based on nanoparticles composite,” Optik 166, 127–131 (2018).
[Crossref]

Sciancalepore, C.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Segev, M.

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
[Crossref]

Shabat, M. M.

H. J. El-Khozondar, R. J. El-Khozondar, M. M. Shabat, and D. M. Schaadt, “Solar cell with multilayer structure based on nanoparticles composite,” Optik 166, 127–131 (2018).
[Crossref]

Sheinfux, H. H.

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
[Crossref]

Shifeng, L.

Shkondin, E.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Shufeng, W.

Shuping, P.

Simovski, C. R.

C. R. Simovski, “On electromagnetic characterization and homogenization of nanostructured metamaterials,” J. Opt. 13(1), 013001 (2011).
[Crossref]

Singh, S.

R. S. Dubey, K. Jhansirani, and S. Singh, “Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating,” Results Phys. 7, 77–81 (2017).
[Crossref]

Slaoui, A.

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

Solanki, C. S.

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

Solntsev, S.

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

Song, C.

Song, J.

Srnánek, R.

J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

Stoquert, J. P.

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

Šutta, P.

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

J. Müllerová and P. Šutta, “On some ambiguities of the absorption edge and optical band gaps of amorphous and polycrystalline semiconductors,” Communications 19(3), 9–15 (2017).

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

J. Müllerová, V. Vavruňková, and P. Šutta, “Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects,” Cent. Eur. J. Phys. 7(2), 315–320 (2009).
[Crossref]

J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Szelag, B.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Takayama, O.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Tichelaar, F. D.

M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
[Crossref]

Topic, M.

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

Tyler, N.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Vavrunková, V.

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

J. Müllerová, V. Vavruňková, and P. Šutta, “Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects,” Cent. Eur. J. Phys. 7(2), 315–320 (2009).
[Crossref]

J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

Vismara, R.

Vullum, P. E.

M. Lamers, K. Butler, P. E. Vullum, J. Harding, and A. Weeber, “Characterization of a-SiN:H layer: Bulk properties, interface with Si and solar cell efficiency,” Phys. Stat. Sol. A 210(4), 658–668 (2013).
[Crossref]

Wang, K. X.

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

Wang, X.

We, W.

Weeber, A.

M. Lamers, K. Butler, P. E. Vullum, J. Harding, and A. Weeber, “Characterization of a-SiN:H layer: Bulk properties, interface with Si and solar cell efficiency,” Phys. Stat. Sol. A 210(4), 658–668 (2013).
[Crossref]

Weinstein, L. A.

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

Wiersma, D. S.

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
[Crossref]

Wilmart, Q.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Wronski, C. R.

A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
[Crossref]

Yablonovitch, E.

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar-cells,” IEEE Trans. Electron Devices 29(2), 300–305 (1982).
[Crossref]

Yamada, S.

S. Yamada, M. Konagai, and S. Miyajima, “Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells,” Jpn. J. Appl. Phys. 55(4S), 04ES06 (2016).
[Crossref]

Yerci, S.

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

Ying, H.

Yu, Y.

Yu, Z.

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

Yvind, K.

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Zan, M. S. D.

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

Zeman, M.

O. Isabella, R. Vismara, A. Ingenito, N. Rezaei, and M. Zeman, “Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells,” Opt. Express 24(6), A708–A719 (2016).
[Crossref]

A. Ingenito, O. Isabella, and M. Zeman, “Experimental demonstration of 4n2 classical absorption limit in nanotextured ultrathin solar cells with dielectric omnidirectional back reflector,” ACS Photonics 1(3), 270–278 (2014).
[Crossref]

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
[Crossref]

Zhijian, C.

Zhukovsky, S. V.

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Ziang, X.

ACS Photonics (1)

A. Ingenito, O. Isabella, and M. Zeman, “Experimental demonstration of 4n2 classical absorption limit in nanotextured ultrathin solar cells with dielectric omnidirectional back reflector,” ACS Photonics 1(3), 270–278 (2014).
[Crossref]

Adv. Opt. Mater. (1)

M. Burresi, F. Pratesi, F. Roboli, and D. S. Wiersma, “Complex photonic structures for light harvesting,” Adv. Opt. Mater. 3(6), 722–743 (2015).
[Crossref]

Appl. Opt. (1)

Appl. Phys. Lett. (1)

G. E. Jellison and F. A. Modine, “Parametrization of the optical functions of amorphous materials in the interband region,” Appl. Phys. Lett. 69(3), 371–373 (1996) and erratum Appl. Phys. Lett. 69, 2137 (1996).
[Crossref]

Appl. Sci. (1)

Q. Wilmart, H. El Dirani, N. Tyler, D. Fowler, S. Malhouitre, S. Garcia, M. Casale, S. Kerdiles, K. Hassan, C. Monat, X. Letartre, A. Kamel, M. Pu, K. Yvind, L. K. Oxenløwe, W. Rabaud, C. Sciancalepore, B. Szelag, and S. Olivier, “A versatile silicon-silicon nitride photonics platform for enhanced functionalities and applications,” Appl. Sci. 9(2), 255 (2019).
[Crossref]

Appl. Surf. Sci. (1)

J. Müllerová, L. Prušáková, M. Netrvalová, V. Vavruňková, and P. Šutta, “A study of optical absorption in amorphous hydrogenated silicon thin films of varied thickness,” Appl. Surf. Sci. 256(18), 5667–5671 (2010).
[Crossref]

Cent. Eur. J. Phys. (1)

J. Müllerová, V. Vavruňková, and P. Šutta, “Optical absorption in PECVD deposited thin hydrogenated silicon in light of ordering effects,” Cent. Eur. J. Phys. 7(2), 315–320 (2009).
[Crossref]

Communications (1)

J. Müllerová and P. Šutta, “On some ambiguities of the absorption edge and optical band gaps of amorphous and polycrystalline semiconductors,” Communications 19(3), 9–15 (2017).

Energy Procedia (1)

M. Zeman, O. Isabella, K. Jäger, R. Santbergen, S. Solntsev, M. Topic, and J. Krc, “Advanced Light Management Approaches for Thin-Film Silicon Solar Cells,” Energy Procedia 15, 189–199 (2012).
[Crossref]

IEEE Trans. Electron Devices (1)

E. Yablonovitch and G. D. Cody, “Intensity enhancement in textured optical sheets for solar-cells,” IEEE Trans. Electron Devices 29(2), 300–305 (1982).
[Crossref]

J. Appl. Phys. (2)

T. M. Mok and S. K. O’Leary, “The dependence of the Tauc and Cody optical gaps associated with hydrogenated amorphous silicon on the film thickness: αl Experimental limitations and the impact of curvature in the Tauc and Cody plots,” J. Appl. Phys. 102(11), 113525 (2007).
[Crossref]

A. S. Ferlauto, G. M. Ferreira, J. M. Pearce, C. R. Wronski, R. W. Collins, X. Deng, and G. Ganguly, “Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics,” J. Appl. Phys. 92(5), 2424–2436 (2002).
[Crossref]

J. Nanopart. Res. (1)

A. K. Panchal, D. K. Rai, M. Mathew, and C. S. Solanki, “a-Si/SiN multilayered light absorber for solar cell,” J. Nanopart. Res. 13(6), 2469–2473 (2011).
[Crossref]

J. Non-Cryst. Solids (1)

C. Ricciardi, V. Ballarini, M. Galli, M. Liscidini, L. C. Andreani, M. Losurdo, G. Bruno, S. Lettieri, F. Gesuele, P. Maddalena, and F. Giorgis, “Amorphous silicon nitride: a suitable alloy for optical multilayered structures,” J. Non-Cryst. Solids 352(9-20), 1294–1297 (2006).
[Crossref]

J. Opt. (2)

L. A. Weinstein, W.-C. Hsu, S. Yerci, S. V. Boriskina, and G. Chen, “Enhanced absorption of thin-film photovoltaic cells using optical cavity,” J. Opt. 17(5), 055901 (2015).
[Crossref]

C. R. Simovski, “On electromagnetic characterization and homogenization of nanostructured metamaterials,” J. Opt. 13(1), 013001 (2011).
[Crossref]

J. Zhejiang Univ., Sci., A (1)

M. S. D. Zan, I. Kato, M. S. Ab-Rahman, and S. M. Mestaza, “Characterization of a-Si:H/SiN multilayer waveguide polarization using an optical pumping application—LED,” J. Zhejiang Univ., Sci., A 10(10), 1421–1427 (2009).
[Crossref]

Jpn. J. Appl. Phys. (1)

S. Yamada, M. Konagai, and S. Miyajima, “Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells,” Jpn. J. Appl. Phys. 55(4S), 04ES06 (2016).
[Crossref]

Mater. Sci. Eng., B (3)

A. Fosca, A. Slaoui, H. Charifi, J. P. Stoquert, and S. Roques, “Surface passivation at low temperature of p- and n-type silicon wafers using a double layer a-Si:H/SiNx:H,” Mater. Sci. Eng., B 159-160, 242–247 (2009).
[Crossref]

H. Ghosh, S. Mitra, H. Saha, S. K. Datta, and C. Banerjee, “Argon plasma treatment of silicon nitride (SiN) for improved antireflection coating on c-Si solar cells,” Mater. Sci. Eng., B 215, 29–36 (2017).
[Crossref]

I. Guler, “Optical and structural characterization of silicon nitride thin films deposited by PECVD,” Mater. Sci. Eng., B 246, 21–26 (2019).
[Crossref]

Nano Lett. (1)

K. X. Wang, Z. Yu, V. Liu, Y. Cui, and S. Fan, “Absorption Enhancement in Ultrathin Crystalline Silicon Solar Cells with Antireflection and Light-Trapping Nanocone Gratings,” Nano Lett. 12(3), 1616–1619 (2012).
[Crossref]

Opt. Express (3)

Opt. Mater. Express (2)

Optik (1)

H. J. El-Khozondar, R. J. El-Khozondar, M. M. Shabat, and D. M. Schaadt, “Solar cell with multilayer structure based on nanoparticles composite,” Optik 166, 127–131 (2018).
[Crossref]

Phys. Rev. Lett. (2)

H. H. Sheinfux, I. Kaminer, Y. Plotnik, G. Bartal, and M. Segev, “Subwavelength multilayer dielectrics: Ultrasensitive transmission and breakdown of effective-medium theory,” Phys. Rev. Lett. 113(24), 243901 (2014).
[Crossref]

S. V. Zhukovsky, A. Andryieuski, O. Takayama, E. Shkondin, R. Malureanu, F. Jensen, and A. V. Lavrinenko, “Experimental demonstration of effective medium approximation breakdown in deeply subwavelength all-dielectric multilayers,” Phys. Rev. Lett. 115(17), 177402 (2015).
[Crossref]

Phys. Stat. Sol. A (1)

M. Lamers, K. Butler, P. E. Vullum, J. Harding, and A. Weeber, “Characterization of a-SiN:H layer: Bulk properties, interface with Si and solar cell efficiency,” Phys. Stat. Sol. A 210(4), 658–668 (2013).
[Crossref]

Phys. Status Solidi C (1)

M. Zeman, O. Isabella, F. D. Tichelaar, and S. L. Luxembourg, “Amorphous silicon-based multilayers for photovoltaic applications,” Phys. Status Solidi C 7(3-4), 1057–1060 (2010).
[Crossref]

Proc. SPIE (2)

J. Müllerová, P. Šutta, L. Prušáková, and M. Netrvalová, “Dispersive and BEMA investigation on optical properties of photovoltaic thin films,” Proc. SPIE 9441, 94411J (2014).
[Crossref]

J. Müllerová, V. Vavruňková, P. Šutta, and R. Srnánek, “Microstructure related optical characterization of technologically relevant hydrogenated silicon thin films,” Proc. SPIE 7141, 714103 (2008).
[Crossref]

Prog. Photovolt: Res. Appl. (1)

M. A. Green, “Lambertian light trapping in textured solar cells and light-emitting diodes: Analytical Solutions,” Prog. Photovolt: Res. Appl. 10(4), 235–241 (2002).
[Crossref]

Results Phys. (1)

R. S. Dubey, K. Jhansirani, and S. Singh, “Investigation of solar cell performance using multilayer thin film structure (SiO2/Si3N4) and grating,” Results Phys. 7, 77–81 (2017).
[Crossref]

Sol. Energy Mater. Sol. Cells (1)

J.-F. Lelièvre, E. Fourmond, A. Kaminski, O. Palais, D. Ballutaud, and M. Lemiti, “Study of the composition of hydrogenated silicon nitride SiNx:H for efficient surface and bulk passivation of silicon,” Sol. Energy Mater. Sol. Cells 93(8), 1281–1289 (2009).
[Crossref]

Vacuum (1)

P. Calta, P. Šutta, R. Medlín, and M. Netrvalová, “Impact of sublayer thickness and annealing on silicon nanostructures formation in a-Si:H/a-SiN:H superlattices for photovoltaics,” Vacuum 153, 154–161 (2018).
[Crossref]

Other (3)

P. Šutta, P. Calta, J. Müllerová, M. Netrvalová, R. Medlín, J. Savková, and V. Vavruňková, “Transition from a-Si:H to Si3N4 in thin films deposited by PECVD technology from silane diluted with nitrogen,“ IEEE Proc. 10th International Conference on Advanced Semiconductor Devices and Microsystems ASDAM 2014, ISBN 978-1-4799-5474-2, 4 pages, (2014).

S. J. Fonash, “Introduction to Light Trapping in Solar Cell and Photo-detector”, first ed., Academic Press as an imprint of Elsevier, 2015.

ASTM Standard Tables for Reference Solar Spectral Irradiances, Standard G173-03 (2012), American Society for Testing and Materials, Philadelphia, PA.

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Figures (9)

Fig. 1.
Fig. 1. Schematics of SYM (left) and ASYM multilayer structures (right).
Fig. 2.
Fig. 2. Dark field (left) and bright filed (right) TEM cross-sectional images of SYM15 sample.
Fig. 3.
Fig. 3. XRD patterns of SYM samples (left) recorded on the identical samples deposited on c-Si substrate and ASYM samples (right) on Corning glass substrate. Sharp lines (left) correspond to Laue peaks stemming from the substrate and coincide with XRD pattern of c-Si.
Fig. 4.
Fig. 4. Optical transmittances of SYM (left) and ASYM (right) samples. For the comparison the transmittance of a single a-Si:H thin films deposited at R = 0 (∼ 400 nm left [22])) and (∼ 300 nm right [23] included (short dot).
Fig. 5.
Fig. 5. The comparison of experimental and theoretical transmittances.
Fig. 6.
Fig. 6. Absorption coefficients of SYM (left) and ASYM (right) samples.
Fig. 7.
Fig. 7. Refractive indices of SYM (left) and ASYM samples (right).
Fig. 8.
Fig. 8. Yablonovitch absorptance of SYM (left) and ASYM (right) samples. Yablonovitch absorptance (short dot line) calculated for undiluted a-Si:H thin film of the thickness of 340 nm similar to overall thickness of ASYM25 sample added for the comparison (data of $\alpha (\lambda )$, $n(\lambda )$ from [32]).
Fig. 9.
Fig. 9. The absorptance of solar global spectral irradiance by ASYM samples. AM 1.5 solar global irradiance is included for comparison.

Tables (3)

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Table 1. Characterization of SYM samples, total thickness by UV Vis is the value from fitting the transmittance spectrum (Section 3.1).

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Table 2. Characterization of ASYM samples, total anticipated thickness was calculated from the number of a-Si:H and a-SiNx:H sublayers and their anticipated thickness (columns 4, 6), total thickness by UV Vis is the value from fitting the transmittance spectrum (Section 3.1).

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Table 3. Comparison of optical properties of SYM and ASYM samples: Tauc optical band gap E g o p t , iso-absorption gap E04, refractive index in the long-wavelength limit n , the Yablonovitch limit 4 n 2 and solar spectrum absorptance A s o l a r .

Equations (2)

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A ( λ ) = α ( λ ) d α ( λ ) d + 1 F = α ( λ ) d 1 + 1 4 n 2 ( λ ) d
A s o l a r = λ 1 λ 2 A ( λ ) S AM 1.5 g ( λ ) d λ λ 1 λ 2 S AM 1.5 g ( λ ) d λ

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