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J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S. Yu, “Si-based GeSn lasers with wavelength coverage of 2–3 µm and operating temperatures up to 180 K,” ACS Photon. 5, 827–833 (2017).
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[Crossref]
W. Dou, M. Benamara, A. Mosleh, J. Margetis, P. Grant, Y. Zhou, S. Al-Kabi, W. Du, J. Tolle, B. Li, M. Mortazavi, and S. Yu, “Investigation of GeSn strain relaxation and spontaneous composition gradient for low-defect and high-Sn alloy growth,” Sci. Rep. 8, 5640 (2018).
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J. Margetis, Y. Zhou, W. Dou, P. Grant, B. Alharthi, W. Du, A. Wadsworth, Q. Guo, H. Tran, S. Ojo, G. Abernathy, A. Mosleh, S. Ghetmiri, G. Thompson, J. Liu, G. Sun, R. Soref, J. Tolle, B. Li, M. Mortazavi, and S. Yu, “All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K,” Appl. Phys. Lett. 113, 221104 (2018).
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J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S. Yu, “Si-based GeSn lasers with wavelength coverage of 2–3 µm and operating temperatures up to 180 K,” ACS Photon. 5, 827–833 (2017).
[Crossref]
H. Tran, W. Du, S. Ghetmiri, A. Mosleh, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, H. Naseem, and S. Yu, “Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119, 103106 (2016).
[Crossref]
Y. Zhou, W. Dou, W. Du, T. Pham, S. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. Soref, B. Li, M. Mortazavi, H. Naseem, and S. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120, 023102 (2016).
[Crossref]
S. Wirths, R. Geiger, N. von den Driesch, G. Mussler, T. Stoica, S. Mantl, Z. Ikonic, M. Luysberg, S. Chiussi, J. M. Hartmann, H. Sigg, J. Faist, D. Buca, and D. Grützmacher, “Lasing in direct-bandgap GeSn alloy grown on Si,” Nat. Photonics 9, 88–92 (2015).
[Crossref]
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[Crossref]
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[Crossref]
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[Crossref]
G. Sun, R. A. Soref, and H. H. Cheng, “Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure mid-infrared laser,” J. Appl. Phys. 108, 033107 (2010).
[Crossref]
G. Sun, R. A. Soref, and H. H. Cheng, “Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode,” Opt. Express 18, 19957–19965 (2010).
[Crossref]
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[Crossref]
J. Chrétien, N. Pauc, F. Armand Pilon, M. Bertrand, Q. Thai, L. Casiez, N. Bernier, H. Dansas, P. Gergaud, E. Delamadeleine, R. Khazaka, H. Sigg, J. Faist, A. Chelnokov, V. Reboud, J. Hartmann, and V. Calvo, “GeSn lasers covering a wide wavelength range thanks to uniaxial tensile strain,” ACS Photon. 6, 2462–2469 (2019).
[Crossref]
Q. Thai, N. Pauc, J. Aubin, M. Bertrand, J. Chrétien, V. Delaye, A. Chelnokov, J. Hartmann, V. Reboud, and V. Calvo, “GeSn heterostructure micro-disk laser operating at 230 K,” Opt. Express 26, 32500–32508 (2018).
[Crossref]
V. Reboud, A. Gassenq, N. Pauc, J. Aubin, L. Milord, Q. M. Thai, M. Bertrand, K. Guilloy, D. Rouchon, J. Rothman, T. Zabel, F. Armand Pilon, H. Sigg, A. Chelnokov, J. Hartmann, and V. Calvo, “Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 µm up to 180 K,” Appl. Phys. Lett. 111, 092101 (2017).
[Crossref]
J. Margetis, Y. Zhou, W. Dou, P. Grant, B. Alharthi, W. Du, A. Wadsworth, Q. Guo, H. Tran, S. Ojo, G. Abernathy, A. Mosleh, S. Ghetmiri, G. Thompson, J. Liu, G. Sun, R. Soref, J. Tolle, B. Li, M. Mortazavi, and S. Yu, “All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K,” Appl. Phys. Lett. 113, 221104 (2018).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S. Yu, “Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si,” ACS Photon. 6, 1434–1441 (2019).
[Crossref]
H. Tran, T. Pham, J. Margetis, Y. Zhou, W. Dou, P. Grant, J. Grant, S. Al-Kabi, G. Sun, R. Soref, J. Tolle, Y. Zhang, W. Du, B. Li, M. Mortazavi, and S. Yu, “Si-Based GeSn photodetectors toward Mid-infrared imaging applications,” ACS Photon. 6, 2807–2815 (2019).
[Crossref]
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J. Margetis, Y. Zhou, W. Dou, P. Grant, B. Alharthi, W. Du, A. Wadsworth, Q. Guo, H. Tran, S. Ojo, G. Abernathy, A. Mosleh, S. Ghetmiri, G. Thompson, J. Liu, G. Sun, R. Soref, J. Tolle, B. Li, M. Mortazavi, and S. Yu, “All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K,” Appl. Phys. Lett. 113, 221104 (2018).
[Crossref]
J. Margetis, S. Al-Kabi, W. Du, W. Dou, Y. Zhou, T. Pham, P. Grant, S. Ghetmiri, A. Mosleh, B. Li, J. Liu, G. Sun, R. Soref, J. Tolle, M. Mortazavi, and S. Yu, “Si-based GeSn lasers with wavelength coverage of 2–3 µm and operating temperatures up to 180 K,” ACS Photon. 5, 827–833 (2017).
[Crossref]
H. Tran, W. Du, S. Ghetmiri, A. Mosleh, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, H. Naseem, and S. Yu, “Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119, 103106 (2016).
[Crossref]
Y. Zhou, W. Dou, W. Du, T. Pham, S. Ghetmiri, S. Al-Kabi, A. Mosleh, M. Alher, J. Margetis, J. Tolle, G. Sun, R. Soref, B. Li, M. Mortazavi, H. Naseem, and S. Yu, “Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications,” J. Appl. Phys. 120, 023102 (2016).
[Crossref]
H. Tran, T. Pham, J. Margetis, Y. Zhou, W. Dou, P. Grant, J. Grant, S. Al-Kabi, G. Sun, R. Soref, J. Tolle, Y. Zhang, W. Du, B. Li, M. Mortazavi, and S. Yu, “Si-Based GeSn photodetectors toward Mid-infrared imaging applications,” ACS Photon. 6, 2807–2815 (2019).
[Crossref]
Y. Zhou, W. Dou, W. Du, S. Ojo, H. Tran, S. Ghetmiri, J. Liu, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, Z. Chen, M. Mortazavi, and S. Yu, “Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si,” ACS Photon. 6, 1434–1441 (2019).
[Crossref]
J. Margetis, Y. Zhou, W. Dou, P. Grant, B. Alharthi, W. Du, A. Wadsworth, Q. Guo, H. Tran, S. Ojo, G. Abernathy, A. Mosleh, S. Ghetmiri, G. Thompson, J. Liu, G. Sun, R. Soref, J. Tolle, B. Li, M. Mortazavi, and S. Yu, “All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K,” Appl. Phys. Lett. 113, 221104 (2018).
[Crossref]
H. Tran, W. Du, S. Ghetmiri, A. Mosleh, G. Sun, R. Soref, J. Margetis, J. Tolle, B. Li, H. Naseem, and S. Yu, “Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics,” J. Appl. Phys. 119, 103106 (2016).
[Crossref]
A. Elbaz, D. Buca, N. von den Driesch, K. Pantzas, G. Patriarche, N. Zerounian, E. Herth, X. Checoury, S. Sauvage, I. Sagnes, A. Foti, R. Ossikovski, J. Hartmann, F. Boeuf, Z. Ikonic, P. Boucaud, D. Grützmacher, and M. El Kurdi, “Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys,” Nat. Photonics 14, 375–382 (2020).
[Crossref]
D. Stange, N. von den Driesch, T. Zabel, F. Armand-Pilon, D. Rainko, B. Marzban, P. Zaumseil, J. Hartmann, Z. Ikonic, G. Capellini, S. Mantl, H. Sigg, J. Witzens, D. Grützmacher, and D. Buca, “GeSn/SiGeSn heterostructure and multi quantum well lasers,” ACS Photon. 5, 4628–4636 (2018).
[Crossref]
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