H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97(23), 231118 (2010).
[Crossref]
F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97(23), 231118 (2010).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C.-Y. Chang, H. Li, and T.-C. Lu, “High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells,” Appl. Phys. Lett. 104(9), 091111 (2014).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
M. Craven, S. Lim, F. Wu, J. Speck, and S. DenBaars, “Structural characterization of nonpolar (112¯ 0) a-plane GaN thin films grown on (11¯ 02) r-plane sapphire,” Appl. Phys. Lett. 81(3), 469–471 (2002).
[Crossref]
E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]
K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]
M. Craven, S. Lim, F. Wu, J. Speck, and S. DenBaars, “Structural characterization of nonpolar (112¯ 0) a-plane GaN thin films grown on (11¯ 02) r-plane sapphire,” Appl. Phys. Lett. 81(3), 469–471 (2002).
[Crossref]
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
F. Bertazzi, M. Goano, and E. Bellotti, “A numerical study of Auger recombination in bulk InGaN,” Appl. Phys. Lett. 97(23), 231118 (2010).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref]
[PubMed]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
C.-Y. Chang, H. Li, and T.-C. Lu, “High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells,” Appl. Phys. Lett. 104(9), 091111 (2014).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
M. Craven, S. Lim, F. Wu, J. Speck, and S. DenBaars, “Structural characterization of nonpolar (112¯ 0) a-plane GaN thin films grown on (11¯ 02) r-plane sapphire,” Appl. Phys. Lett. 81(3), 469–471 (2002).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
L.-H. Zhu, Q.-H. Zheng, and B.-L. Liu, “Performance improvement of InGaN/GaN light-emitting diodes with triangular-shaped multiple quantum wells,” Semicond. Sci. Technol. 24(12), 125003 (2009).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
C.-Y. Chang, H. Li, and T.-C. Lu, “High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells,” Appl. Phys. Lett. 104(9), 091111 (2014).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
M. R. Krames, O. B. Shchekin, R. Mueller-Mach, G. O. Mueller, L. Zhou, G. Harbers, and M. G. Craford, “Status and future of high-power light-emitting diodes for solid-state lighting,” J. Display Technol. 3(2), 160–175 (2007).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]
E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]
K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
E. F. Schubert and J. K. Kim, “Solid-state light sources getting smart,” Science 308(5726), 1274–1278 (2005).
[Crossref]
[PubMed]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
M. Craven, S. Lim, F. Wu, J. Speck, and S. DenBaars, “Structural characterization of nonpolar (112¯ 0) a-plane GaN thin films grown on (11¯ 02) r-plane sapphire,” Appl. Phys. Lett. 81(3), 469–471 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
D. A. Steigerwald, J. C. Bhat, D. Collins, R. M. Fletcher, M. O. Holcomb, M. J. Ludowise, P. S. Martin, and S. L. Rudaz, “Illumination with solid state lighting technology,” IEEE J. Sel. Top. Quantum Electron. 8(2), 310–320 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
R. Choi, Y. Hahn, H. Shim, M. Han, E. Suh, and H. Lee, “Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells,” Appl. Phys. Lett. 82(17), 2764–2766 (2003).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009).
[Crossref]
E. Kioupakis, P. Rinke, K. T. Delaney, and C. G. Van de Walle, “Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes,” Appl. Phys. Lett. 98(16), 161107 (2011).
[Crossref]
K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009).
[Crossref]
H. C. Matthijs, H. Balke, U. M. van Hes, B. M. Kroon, L. R. Mur, and R. A. Binot, “Application of light-emitting diodes in bioreactors: flashing light effects and energy economy in algal culture (Chlorella pyrenoidosa),” Biotechnol. Bioeng. 50(1), 98–107 (1996).
[Crossref]
[PubMed]
F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56(16), R10024 (1997).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
I. Vurgaftman, J. Meyer, and L. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys. 89(11), 5815–5875 (2001).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
B.-C. Lin, K.-J. Chen, C.-H. Wang, C.-H. Chiu, Y.-P. Lan, C.-C. Lin, P.-T. Lee, M.-H. Shih, Y.-K. Kuo, and H.-C. Kuo, “Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer,” Opt. Express 22(1), 463–469 (2014).
[Crossref]
[PubMed]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
F. Steranka, J. Bhat, D. Collins, L. Cook, M. Craford, R. Fletcher, N. Gardner, P. Grillot, W. Goetz, M. Keuper, R. Khare, A. Kim, M. Krames, G. Harbers, M. Ludowise, P. S. Martin, M. Misra, G. Mueller, R. Mueller-Mach, S. Rudaz, Y.-C. Shen, D. Steigerwald, S. Stockman, S. Subramanya, T. Trottier, and J. J. Wierer, “High power LEDs–Technology status and market applications,” Phys. Status Solidi 194(2), 380–388 (2002).
[Crossref]
M. Craven, S. Lim, F. Wu, J. Speck, and S. DenBaars, “Structural characterization of nonpolar (112¯ 0) a-plane GaN thin films grown on (11¯ 02) r-plane sapphire,” Appl. Phys. Lett. 81(3), 469–471 (2002).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
J. Huang, X. Dong, X. Luo, D. Li, X. Liu, Z. Xu, and W. Ge, “Growth temperature effect on the optical and material properties of Al xInyGa1− x− y N epilayers grown by MOCVD,” J. Cryst. Growth 247(1-2), 84–90 (2003).
[Crossref]
C. Wang, S. Chang, P. Ku, J. Li, Y. Lan, C. Lin, H. Yang, H. Kuo, T. Lu, S. Wang, and C. Y. Chang, “Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers,” Appl. Phys. Lett. 99(17), 171106 (2011).
[Crossref]
C. Wang, C. Ke, C. Lee, S. Chang, W. Chang, J. Li, Z. Li, H. Yang, H. Kuo, T. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010).
[Crossref]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
G. Verzellesi, D. Saguatti, M. Meneghini, F. Bertazzi, M. Goano, G. Meneghesso, and E. Zanoni, “Efficiency droop in InGaN/GaN blue light-emitting diodes: physical mechanisms and remedies,” J. Appl. Phys. 114(7), 071101 (2013).
[Crossref]
H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref]
[PubMed]
J. Zhang, J. Yang, G. Simin, M. Shatalov, M. A. Khan, M. Shur, and R. Gaska, “Enhanced luminescence in InGaN multiple quantum wells with quaternary AlInGaN barriers,” Appl. Phys. Lett. 77(17), 2668–2670 (2000).
[Crossref]
L. Zhang, R. R. Lieten, M. Latkowska, M. Baranowski, R. Kudrawiec, K. Cheng, H. Liang, and G. Borghs, “Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy,” Jpn. J. Appl. Phys. 52(8S), 08JL10 (2013).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
Y. Ji, W. Liu, T. Erdem, R. Chen, S. T. Tan, Z.-H. Zhang, Z. Ju, X. Zhang, H. Sun, and X. W. Sun, “Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯ 2) semipolar versus (0001) polar planes,” Appl. Phys. Lett. 104(14), 143506 (2014).
[Crossref]
L.-H. Zhu, Q.-H. Zheng, and B.-L. Liu, “Performance improvement of InGaN/GaN light-emitting diodes with triangular-shaped multiple quantum wells,” Semicond. Sci. Technol. 24(12), 125003 (2009).
[Crossref]
S. Huang, Z. Chen, Y. Xian, B. Fan, Z. Zheng, Z. Wu, H. Jiang, and G. Wang, “Emission enhancement in GaN-based light emitting diodes with shallow triangular quantum wells,” Appl. Phys. Lett. 101(4), 041116 (2012).
[Crossref]
L.-H. Zhu, Q.-H. Zheng, and B.-L. Liu, “Performance improvement of InGaN/GaN light-emitting diodes with triangular-shaped multiple quantum wells,” Semicond. Sci. Technol. 24(12), 125003 (2009).
[Crossref]