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[Crossref]
A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, and A. Waag, “Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy,” Superlattices Microstruct. 42(1-6), 129–133 (2007).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O’Donnell, E. Alves, N. Franco, and A. D. Sequeira, “Structural and optical properties of InGaN/GaN layers close to the critical layer thickness,” Appl. Phys. Lett. 81(7), 1207–1209 (2002).
[Crossref]
H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and characteristics of staggered InGaN quantum well light-emitting diodes in the green spectral regimes,” IET Optoelectron. 3(6), 283–295 (2009).
[Crossref]
R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
[Crossref]
D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, “Optically pumped lasing of ZnO at room temperature,” Appl. Phys. Lett. 70(17), 2230–2232 (1997).
[Crossref]
G. Coli and K. K. Bajaj, “Excitonic transitions in ZnO/MgZnO quantum well heterostructures,” Appl. Phys. Lett. 78(19), 2861–2863 (2001).
[Crossref]
A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, and A. Waag, “Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy,” Superlattices Microstruct. 42(1-6), 129–133 (2007).
[Crossref]
A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, “Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer,” J. Cryst. Growth 308(2), 314–320 (2007).
[Crossref]
A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, “Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer,” J. Cryst. Growth 308(2), 314–320 (2007).
[Crossref]
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann, “Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition,” Appl. Phys. Lett. 97(5), 052101 (2010).
[Crossref]
T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, “Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy,” Appl. Phys. Lett. 83(16), 3290–3292 (2003).
[Crossref]
M. Brandt, H. Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, and M. Grundmann, “Semiconducting oxide heterostructures,” Semicond. Sci. Technol. 26(1), 014040 (2011).
[Crossref]
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann, “Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition,” Appl. Phys. Lett. 97(5), 052101 (2010).
[Crossref]
V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, “Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing,” Semicond. Sci. Technol. 21(3), L25–L28 (2006).
[Crossref]
S. Y. Ting, P. J. Chen, H. C. Wang, C. H. Liao, W. M. Chang, Y. P. Hsieh, and C. C. Yang, “Crystallinity improvement of ZnO thin film on different buffer layers grown by MBE,” J. Nanomater. 2012, 6 (2012), doi:.
[Crossref]
A. El-Shaer, A. Bakin, M. Al-Suleiman, S. Ivanov, A. Che Mofor, and A. Waag, “Growth of wide band gap wurtzite ZnMgO layers on (0001) Al2O3 by radical-source molecular beam epitaxy,” Superlattices Microstruct. 42(1-6), 129–133 (2007).
[Crossref]
S. Y. Ting, P. J. Chen, H. C. Wang, C. H. Liao, W. M. Chang, Y. P. Hsieh, and C. C. Yang, “Crystallinity improvement of ZnO thin film on different buffer layers grown by MBE,” J. Nanomater. 2012, 6 (2012), doi:.
[Crossref]
Y. Chen, F. Jiang, L. Wang, C. Zheng, J. Dai, Y. Pu, and W. Fang, “Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD,” J. Cryst. Growth 275(3-4), 486–491 (2005).
[Crossref]
Y. Chen, S. K. Hong, H. J. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa, “Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch,” Appl. Phys. Lett. 78(21), 3352–3354 (2001).
[Crossref]
Y. Chen, H. J. Ko, S. K. Hong, and T. Yao, “Layer-by-layer growth of ZnO epilayer on Al2O3 (0001) by using a MgO buffer layer,” Appl. Phys. Lett. 76(5), 559–561 (2000).
[Crossref]
D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, “Optically pumped lasing of ZnO at room temperature,” Appl. Phys. Lett. 70(17), 2230–2232 (1997).
[Crossref]
Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, “Effect of temperature on lateral growth of ZnO grains grown by MOCVD,” Ceram. Int. 36(1), 69–73 (2010).
[Crossref]
T. Makino, K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, and H. Koinuma, “Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers,” Appl. Phys. Lett. 81(12), 2172–2174 (2002).
[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
[Crossref]
T. Makino, C. H. Chia, N. T. Tuan, H. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Room-temperature luminescence of excitons in ZnO/(Mg,Zn) O multiple quantum wells on lattice-matched substrates,” Appl. Phys. Lett. 77(7), 975–977 (2000).
[Crossref]
T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, “Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy,” Appl. Phys. Lett. 83(16), 3290–3292 (2003).
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[Crossref]
V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, “Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing,” Semicond. Sci. Technol. 21(3), L25–L28 (2006).
[Crossref]
G. Coli and K. K. Bajaj, “Excitonic transitions in ZnO/MgZnO quantum well heterostructures,” Appl. Phys. Lett. 78(19), 2861–2863 (2001).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O’Donnell, E. Alves, N. Franco, and A. D. Sequeira, “Structural and optical properties of InGaN/GaN layers close to the critical layer thickness,” Appl. Phys. Lett. 81(7), 1207–1209 (2002).
[Crossref]
Y. Chen, F. Jiang, L. Wang, C. Zheng, J. Dai, Y. Pu, and W. Fang, “Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD,” J. Cryst. Growth 275(3-4), 486–491 (2005).
[Crossref]
E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100(6), 061111 (2012).
[Crossref]
C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]
C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]
R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and ipurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
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[Crossref]
Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, “Effect of temperature on lateral growth of ZnO grains grown by MOCVD,” Ceram. Int. 36(1), 69–73 (2010).
[Crossref]
R. A. Arif, Y.-K. Ee, and N. Tansu, “Polarization engineering via staggered InGaN quantum wells for radiative efficiency enhancement of light emitting diodes,” Appl. Phys. Lett. 91(9), 091110 (2007).
[Crossref]
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[Crossref]
A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, “Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer,” J. Cryst. Growth 308(2), 314–320 (2007).
[Crossref]
A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, “Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer,” J. Cryst. Growth 308(2), 314–320 (2007).
[Crossref]
G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]
H. Long, G. Fang, S. Li, X. Mo, H. Wang, H. Huang, Q. Jiang, J. Wang, and X. Zhao, “A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode,” IEEE Electron Device Lett. 32(1), 54–56 (2011).
[Crossref]
Y. Chen, F. Jiang, L. Wang, C. Zheng, J. Dai, Y. Pu, and W. Fang, “Structural and luminescent properties of ZnO epitaxial film grown on Si(111) substrate by atmospheric-pressure MOCVD,” J. Cryst. Growth 275(3-4), 486–491 (2005).
[Crossref]
R. Thierry, G. Perillat-Merceroz, P. H. Jouneau, P. Ferret, and G. Feuillet, “Core-shell multi-quantum wells in ZnO/ZnMgO nanowires with high optical efficiency at room temperature,” Nanotechnology 23(8), 085705 (2012).
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[Crossref]
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T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, “Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy,” Appl. Phys. Lett. 83(16), 3290–3292 (2003).
[Crossref]
E. Francesco Pecora, W. Zhang, A. Yu. Nikiforov, L. Zhou, D. J. Smith, J. Yin, R. Paiella, L. Dal Negro, and T. D. Moustakas, “Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations,” Appl. Phys. Lett. 100(6), 061111 (2012).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O’Donnell, E. Alves, N. Franco, and A. D. Sequeira, “Structural and optical properties of InGaN/GaN layers close to the critical layer thickness,” Appl. Phys. Lett. 81(7), 1207–1209 (2002).
[Crossref]
Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, “Effect of temperature on lateral growth of ZnO grains grown by MOCVD,” Ceram. Int. 36(1), 69–73 (2010).
[Crossref]
K. Koike, G. Y. Takada, K. Fujimoto, S. Sasa, M. Inoue, and M. Yano, “Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy,” Physica E 32(1-2), 191–194 (2006).
[Crossref]
D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, “Optically pumped lasing of ZnO at room temperature,” Appl. Phys. Lett. 70(17), 2230–2232 (1997).
[Crossref]
T. Gruber, C. Kirchner, R. Kling, F. Reuss, and A. Waag, “ZnMgO epilayers and ZnO-ZnMgO quantum wells for optoelectronic applications in the blue and UV spectral region,” Appl. Phys. Lett. 84(26), 5359–5361 (2004).
[Crossref]
T. Gruber, C. Kirchner, R. Kling, F. Reuss, A. Waag, F. Bertram, D. Forster, J. Christen, and M. Schreck, “Optical and structural analysis of ZnCdO layers grown by metalorganic vapor-phase epitaxy,” Appl. Phys. Lett. 83(16), 3290–3292 (2003).
[Crossref]
M. Brandt, H. Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, and M. Grundmann, “Semiconducting oxide heterostructures,” Semicond. Sci. Technol. 26(1), 014040 (2011).
[Crossref]
M. Brandt, M. Lange, M. Stölzel, A. Müller, G. Benndorf, J. Zippel, J. Lenzner, M. Lorenz, and M. Grundmann, “Control of interface abruptness of polar MgZnO/ZnO quantum wells grown by pulsed laser deposition,” Appl. Phys. Lett. 97(5), 052101 (2010).
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[Crossref]
C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
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J. G. Kim, S. K. Han, S. M. Yang, S. K. Hong, J. W. Lee, J. Y. Lee, J. H. Song, Y. E. Ihm, D. Kim, J. S. Park, H. J. Lee, and T. Yao, “Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy,” Thin Solid Films 519(1), 223–227 (2010).
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H. Matsui, H. Tabata, N. Hasuike, and H. Harima, “Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells,” J. Appl. Phys. 99(2), 024902 (2006).
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K. Koike, I. Nakashima, K. Hashimoto, S. Sasa, M. Inoue, and M. Yano, “Characteristics of a Zn0.7Mg0.3O/ZnO heterostructure field-effect transistor grown on sapphire substrate by molecular-beam epitaxy,” Appl. Phys. Lett. 87(11), 112106 (2005).
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H. Matsui, H. Tabata, N. Hasuike, and H. Harima, “Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells,” J. Appl. Phys. 99(2), 024902 (2006).
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H. Matsui, H. Tabata, N. Hasuike, and H. Harima, “Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wells,” J. Appl. Phys. 99(2), 024902 (2006).
[Crossref]
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Y. J. Chen, Y. Y. Shih, C. H. Ho, J. H. Du, and Y. P. Fu, “Effect of temperature on lateral growth of ZnO grains grown by MOCVD,” Ceram. Int. 36(1), 69–73 (2010).
[Crossref]
M. Brandt, H. Wenckstern, M. Stölzel, H. Hochmuth, M. Lorenz, and M. Grundmann, “Semiconducting oxide heterostructures,” Semicond. Sci. Technol. 26(1), 014040 (2011).
[Crossref]
J. G. Kim, S. K. Han, S. M. Yang, S. K. Hong, J. W. Lee, J. Y. Lee, J. H. Song, Y. E. Ihm, D. Kim, J. S. Park, H. J. Lee, and T. Yao, “Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy,” Thin Solid Films 519(1), 223–227 (2010).
[Crossref]
Y. Chen, S. K. Hong, H. J. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa, “Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch,” Appl. Phys. Lett. 78(21), 3352–3354 (2001).
[Crossref]
Y. Chen, H. J. Ko, S. K. Hong, and T. Yao, “Layer-by-layer growth of ZnO epilayer on Al2O3 (0001) by using a MgO buffer layer,” Appl. Phys. Lett. 76(5), 559–561 (2000).
[Crossref]
S. Y. Ting, P. J. Chen, H. C. Wang, C. H. Liao, W. M. Chang, Y. P. Hsieh, and C. C. Yang, “Crystallinity improvement of ZnO thin film on different buffer layers grown by MBE,” J. Nanomater. 2012, 6 (2012), doi:.
[Crossref]
X. Q. Gu, L. P. Zhu, Z. Z. Ye, H. P. He, Y. Z. Zhang, F. Huang, M. X. Qiu, Y. J. Zeng, F. Liu, and W. Jaeger, “Room-temperature photoluminescence from ZnO/ZnMgO multiple quantum wells grown on Si(111) substrates,” Appl. Phys. Lett. 91(2), 022103 (2007).
[Crossref]
G. Liu, J. Zhang, X. H. Li, G. S. Huang, T. Paskova, K. R. Evans, H. Zhao, and N. Tansu, “Metalorganic vapor phase epitaxy and characterizations of nearly-lattice-matched AlInN alloys on GaN/sapphire templates and free-standing GaN substrates,” J. Cryst. Growth 340(1), 66–73 (2012).
[Crossref]
H. P. Zhao, G. Y. Liu, X. H. Li, R. A. Arif, G. S. Huang, J. D. Poplawsky, S. Tafon Penn, V. Dierolf, and N. Tansu, “Design and characteristics of staggered InGaN quantum well light-emitting diodes in the green spectral regimes,” IET Optoelectron. 3(6), 283–295 (2009).
[Crossref]
H. Long, G. Fang, S. Li, X. Mo, H. Wang, H. Huang, Q. Jiang, J. Wang, and X. Zhao, “A ZnO/ZnMgO multiple-quantum-well ultraviolet random laser diode,” IEEE Electron Device Lett. 32(1), 54–56 (2011).
[Crossref]
K. Wu, H. He, Y. Lu, J. Huang, and Z. Ye, “Dominant free exciton emission in ZnO nanorods,” Nanoscale 4(5), 1701–1706 (2012).
[Crossref]
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[Crossref]
J. G. Kim, S. K. Han, S. M. Yang, S. K. Hong, J. W. Lee, J. Y. Lee, J. H. Song, Y. E. Ihm, D. Kim, J. S. Park, H. J. Lee, and T. Yao, “Effects of low temperature ZnO and MgO buffer thicknesses on properties of ZnO films grown on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy,” Thin Solid Films 519(1), 223–227 (2010).
[Crossref]
Y. Chen, S. K. Hong, H. J. Ko, V. Kirshner, H. Wenisch, T. Yao, K. Inaba, and Y. Segawa, “Effects of an extremely thin buffer on heteroepitaxy with large lattice mismatch,” Appl. Phys. Lett. 78(21), 3352–3354 (2001).
[Crossref]
C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]
V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, “Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing,” Semicond. Sci. Technol. 21(3), L25–L28 (2006).
[Crossref]
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[Crossref]
D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Phonon replicas in ZnO/ZnMgO multiquantum wells,” J. Appl. Phys. 91(10), 6457–6460 (2002).
[Crossref]
T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, “Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films,” Appl. Phys. Lett. 78(9), 1237–1239 (2001).
[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
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[Crossref]
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[Crossref]
H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
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V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, “Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing,” Semicond. Sci. Technol. 21(3), L25–L28 (2006).
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[Crossref]
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[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
[Crossref]
T. Makino, C. H. Chia, N. T. Tuan, H. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Room-temperature luminescence of excitons in ZnO/(Mg,Zn) O multiple quantum wells on lattice-matched substrates,” Appl. Phys. Lett. 77(7), 975–977 (2000).
[Crossref]
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[Crossref]
A. Bakin, J. Kioseoglou, B. Pecz, A. El-Shaer, A.-C. Mofor, J. Stoemenos, and A. Waag, “Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer,” J. Cryst. Growth 308(2), 314–320 (2007).
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[Crossref]
T. Sugahara, M. Hao, T. Wang, D. Nakagawa, Y. Naoi, K. Nishino, and S. Sakai, “Role of dislocation in InGaN phase separation,” Jpn. J. Appl. Phys. Part 2 37(Part 2, No. 10B), L1195–L1198 (1998).
[Crossref]
D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Phonon replicas in ZnO/ZnMgO multiquantum wells,” J. Appl. Phys. 91(10), 6457–6460 (2002).
[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
[Crossref]
T. Makino, C. H. Chia, N. T. Tuan, H. D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Room-temperature luminescence of excitons in ZnO/(Mg,Zn) O multiple quantum wells on lattice-matched substrates,” Appl. Phys. Lett. 77(7), 975–977 (2000).
[Crossref]
S. Pereira, M. R. Correia, E. Pereira, C. Trager-Cowan, F. Sweeney, K. P. O’Donnell, E. Alves, N. Franco, and A. D. Sequeira, “Structural and optical properties of InGaN/GaN layers close to the critical layer thickness,” Appl. Phys. Lett. 81(7), 1207–1209 (2002).
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[Crossref]
K. Koike, G. Y. Takada, K. Fujimoto, S. Sasa, M. Inoue, and M. Yano, “Characterization of [ZnO]m[ZnMgO]n multiple quantum wells grown by molecular beam epitaxy,” Physica E 32(1-2), 191–194 (2006).
[Crossref]
D. Sun, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, and H. Koinuma, “Phonon replicas in ZnO/ZnMgO multiquantum wells,” J. Appl. Phys. 91(10), 6457–6460 (2002).
[Crossref]
T. Makino, K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, and H. Koinuma, “Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers,” Appl. Phys. Lett. 81(12), 2172–2174 (2002).
[Crossref]
T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda, and H. Koinuma, “Band gap engineering based on MgxZn1−xO and CdyZn1−yO ternary alloy films,” Appl. Phys. Lett. 78(9), 1237–1239 (2001).
[Crossref]
T. Makino, N. T. Tuan, H. D. Sun, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, T. Suemoto, H. Akiyama, M. Baba, S. Saito, T. Tomita, and H. Koinuma, “Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg,Zn)O multiple quantum wells,” Appl. Phys. Lett. 78(14), 1979–1981 (2001).
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[Crossref]
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[Crossref]
V. A. Coleman, M. Buda, H. H. Tan, C. Jagadish, M. R. Phillips, K. Koike, S. Sasa, M. Inoue, and M. Yano, “Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixing,” Semicond. Sci. Technol. 21(3), L25–L28 (2006).
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