Scalable fabrication of coupled NV center - photonic crystal cavity systems by self-aligned N ion implantation

T. Schröder; M. Walsh; J. Zheng; S. Mouradian; L. Li; G. Malladi; H. Bakhru; M. Lu; A. Stein; M. Heuck; D. Englund

doi:10.1364/OME.7.001514

Scalable fabrication of coupled NV center - photonic crystal cavity systems by self-aligned N ion implantation

T. Schröder, M. Walsh, J. Zheng, S. Mouradian, L. Li, G. Malladi, H. Bakhru, M. Lu, A. Stein, M. Heuck, and D. Englund

Optical Materials Express
Vol. 7,
Issue 5,
pp. 1514-1524
(2017)
•https://doi.org/10.1364/OME.7.001514

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T. Schröder, M. Walsh, J. Zheng, S. Mouradian, L. Li, G. Malladi, H. Bakhru, M. Lu, A. Stein, M. Heuck, and D. Englund, "Scalable fabrication of coupled NV center - photonic crystal cavity systems by self-aligned N ion implantation," Opt. Mater. Express 7, 1514-1524 (2017)

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Related Topics
Table of Contents Category
- Quantum Optics
Optics & Photonics Topics
?

The topics in this list come from the OSA Optics and Photonics Topics applied to this article.
Previously assigned OCIS codes
- Integrated optics (130.0130)
- Defect-center materials (160.2220)
- Diamond machining (220.1920)
- Photonic crystals (230.5298)
- Photonic integrated circuits (250.5300)
- Nanophotonics and photonic crystals (350.4238)
- Quantum optics (270.0270)

About this Article
History
- Original Manuscript: January 6, 2017
- Revised Manuscript: March 2, 2017
- Manuscript Accepted: March 5, 2017
- Published: April 6, 2017
Virtual Issues

May 12, 2017 Spotlight on Optics

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Abstract

Towards building large-scale integrated photonic systems for quantum information processing, spatial and spectral alignment of single quantum systems to photonic nanocavities is required. Here, we demonstrate spatially targeted implantation of nitrogen vacancy (NV) centers into the mode maximum of 2-d diamond photonic crystal cavities with quality factors up to 8000, achieving an average of 1.1 ± 0.2 NVs per cavity. Nearly all NV-cavity systems have significant emission intensity enhancement, reaching a cavity-fed spectrally selective intensity enhancement, F_int, of up to 93. Although spatial NV-cavity overlap is nearly guaranteed within about 40 nm, spectral tuning of the NV’s zero-phonon-line (ZPL) is still necessary after fabrication. To demonstrate spectral control, we temperature tune a cavity into an NV ZPL, yielding $F_{int}^{ZPL} ~ 5$ at cryogenic temperatures.

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2016 (5)

K. Nemoto, M. Trupke, S. J. Devitt, B. Scharfenberger, K. Buczak, J. Schmiedmayer, and W. J. Munro, “Photonic Quantum Networks formed from NV- centers,” Sci. Rep. 6, 26284 (2016).
[Crossref]

M. Schukraft, J. Zheng, T. Schröder, S. L. Mouradian, M. Walsh, M. E. Trusheim, H. Bakhru, and D. R. Englund, “Invited Article: Precision nanoimplantation of nitrogen vacancy centers into diamond photonic crystal cavities and waveguides,” APL Photonics 1, 020801 (2016).
[Crossref]

T. Greibe, T. A. Anhøj, L. S. Johansen, and A. Han, “Quality control of JEOL JBX-9500fsz e-beam lithography system in a multi-user laboratory,” Microelectron. Eng. 155, 25–28 (2016).
[Crossref]

T. Schröder, S. L. Mouradian, J. Zheng, M. E. Trusheim, M. Walsh, E. H. Chen, L. Li, I. Bayn, and D. Englund, “Quantum nanophotonics in diamond [Invited],” Journal of the Optical Society of America B 33, B65 (2016).
[Crossref]

D. Scarabelli, M. Trusheim, O. Gaathon, D. Englund, and S. J. Wind, “Nanoscale Engineering of Closely-Spaced Electronic Spins in Diamond,” Nano Lett. 16, 4982–4990 (2016).
[Crossref] [PubMed]

2015 (6)

S. L. Mouradian, T. Schröder, C. B. Poitras, L. Li, J. Goldstein, E. H. Chen, M. Walsh, J. Cardenas, M. L. Markham, D. J. Twitchen, M. Lipson, and D. Englund, “Scalable Integration of Long-Lived Quantum Memories into a Photonic Circuit,” Phys. Rev. X 5, 031009 (2015).
[Crossref]

L. Li, I. Bayn, M. Lu, C.-Y. Nam, T. Schröder, A. Stein, N. C. Harris, and D. Englund, “Nanofabrication on unconventional substrates using transferred hard masks,” Sci. Rep. 5, 7802 (2015).
[Crossref] [PubMed]

I. Bayn, E. H. Chen, M. E. Trusheim, L. Li, T. Schröder, O. Gaathon, M. Lu, A. Stein, M. Liu, K. Kisslinger, H. Clevenson, and D. Englund, “Generation of Ensembles of Individually Resolvable Nitrogen Vacancies Using Nanometer-Scale Apertures in Ultrahigh-Aspect Ratio Planar Implantation Masks,” Nano Lett. 15, 1751–1758 (2015).
[Crossref] [PubMed]

B. Hensen, H. Bernien, A. E. Dréau, A. Reiserer, N. Kalb, M. S. Blok, J. Ruitenberg, R. F. L. Vermeulen, R. N. Schouten, C. Abellán, W. Amaya, V. Pruneri, M. W. Mitchell, M. Markham, D. J. Twitchen, D. Elkouss, S. Wehner, T. H. Taminiau, and R. Hanson, “Loophole-free Bell inequality violation using electron spins separated by 1.3 kilometres,” Nature 526, 682–686 (2015).
[Crossref] [PubMed]

L. Li, T. Schröder, E. H. Chen, M. Walsh, I. Bayn, J. Goldstein, O. Gaathon, M. E. Trusheim, M. Lu, J. Mower, M. Cotlet, M. L. Markham, D. J. Twitchen, and D. Englund, “Coherent spin control of a nanocavity-enhanced qubit in diamond,” Nat. Commun. 6, 6173 (2015).
[Crossref] [PubMed]

J. Riedrich-Möller, S. Pezzagna, J. Meijer, C. Pauly, F. Mücklich, M. Markham, A. M. Edmonds, and C. Becher, “Nanoimplantation and Purcell enhancement of single nitrogen-vacancy centers in photonic crystal cavities in diamond,” Appl. Phys. Lett. 106, 221103 (2015).
[Crossref]

2014 (6)

C. Monroe, R. Raussendorf, A. Ruthven, K. R. Brown, P. Maunz, L.-M. Duan, and J. Kim, “Large-scale modular quantum-computer architecture with atomic memory and photonic interconnects,” Phys. Rev. A 89, 022317 (2014).
[Crossref]

K. Nemoto, M. Trupke, S. J. Devitt, A. M. Stephens, B. Scharfenberger, K. Buczak, T. Nöbauer, M. S. Everitt, J. Schmiedmayer, and W. J. Munro, “Photonic Architecture for Scalable Quantum Information Processing in Diamond,” Phys. Rev. X 4, 031022 (2014).
[Crossref]

S. Tamura, G. Koike, A. Komatsubara, T. Teraji, S. Onoda, L. P. McGuinness, L. Rogers, B. Naydenov, E. Wu, L. Yan, F. Jelezko, T. Ohshima, J. Isoya, T. Shinada, and T. Tanii, “Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation,” Appl. Phys. Express 7, 115201 (2014).
[Crossref]

A. Alkauskas, B. B. Buckley, D. D. Awschalom, and C. G. V. d. Walle, “First-principles theory of the luminescence lineshape for the triplet transition in diamond NV centres,” New J. Phys. 16, 073026 (2014).
[Crossref]

T. G. Tiecke, J. D. Thompson, N. P. de Leon, L. R. Liu, V. Vuletić, and M. D. Lukin, “Nanophotonic quantum phase switch with a single atom,” Nature 508, 241–244 (2014).
[Crossref] [PubMed]

R. Albrecht, A. Bommer, C. Pauly, F. Mücklich, A. W. Schell, P. Engel, T. Schröder, O. Benson, J. Reichel, and C. Becher, “Narrow-band single photon emission at room temperature based on a single nitrogen-vacancy center coupled to an all-fiber-cavity,” Appl. Phys. Lett. 105, 073113 (2014).
[Crossref]

2013 (4)

M. Lesik, P. Spinicelli, S. Pezzagna, P. Happel, V. Jacques, O. Salord, B. Rasser, A. Delobbe, P. Sudraud, A. Tallaire, J. Meijer, and J.-F. Roch, “Maskless and targeted creation of arrays of colour centres in diamond using focused ion beam technology,” physica status solidi (a) 210, 2055–2059 (2013).
[Crossref]

R. Albrecht, A. Bommer, C. Deutsch, J. Reichel, and C. Becher, “Coupling of a Single Nitrogen-Vacancy Center in Diamond to a Fiber-Based Microcavity,” Phys. Rev. Lett. 110, 243602 (2013).
[Crossref] [PubMed]

H. Bernien, B. Hensen, W. Pfaff, G. Koolstra, M. S. Blok, L. Robledo, T. H. Taminiau, M. Markham, D. J. Twitchen, L. Childress, and R. Hanson, “Heralded entanglement between solid-state qubits separated by three metres,” Nature 497, 86–90 (2013).
[Crossref] [PubMed]

B. J. M. Hausmann, B. J. Shields, Q. Quan, Y. Chu, N. P. de Leon, R. Evans, M. J. Burek, A. S. Zibrov, M. Markham, D. J. Twitchen, H. Park, M. D. Lukin, and M. Lončar, “Coupling of NV Centers to Photonic Crystal Nanobeams in Diamond,” Nano Lett. 13, 5791–5796 (2013).
[Crossref] [PubMed]

2012 (3)

J. Riedrich-Möller, L. Kipfstuhl, C. Hepp, E. Neu, C. Pauly, F. Mücklich, A. Baur, M. Wandt, S. Wolff, M. Fischer, S. Gsell, M. Schreck, and C. Becher, “One- and two-dimensional photonic crystal microcavities in single crystal diamond,” Nat. Nanotech. 7, 69–74 (2012).
[Crossref]

A. Faraon, C. Santori, Z. Huang, V. M. Acosta, and R. G. Beausoleil, “Coupling of Nitrogen-Vacancy Centers to Photonic Crystal Cavities in Monocrystalline Diamond,” Phys. Rev. Lett. 109, 033604 (2012).
[Crossref] [PubMed]

H.-Q. Zhao, M. Fujiwara, and S. Takeuchi, “Suppression of fluorescence phonon sideband from nitrogen vacancy centers in diamond nanocrystals by substrate effect,” Opt. Express 20, 15628 (2012).
[Crossref] [PubMed]

2011 (1)

A. Faraon, P. E. Barclay, C. Santori, K.-M. C. Fu, and R. G. Beausoleil, “Resonant enhancement of the zero-phonon emission from a colour centre in a diamond cavity,” Nat. Photon. 5, 301–305 (2011).
[Crossref]

2010 (7)

T. D. Ladd, F. Jelezko, R. Laflamme, Y. Nakamura, C. Monroe, and J. L. O’Brien, “Quantum computers,” Nature 464, 45–53 (2010).
[Crossref] [PubMed]

D. Englund, B. Shields, K. Rivoire, F. Hatami, J. Vuckovic, H. Park, and M. D. Lukin, “Deterministic Coupling of a Single Nitrogen Vacancy Center to a Photonic Crystal Cavity,” Nano Lett. 10, 3922–3926 (2010).
[Crossref] [PubMed]

J. Wolters, A. W. Schell, G. Kewes, N. Nüsse, M. Schoengen, H. Doscher, T. Hannappel, B. Lochel, M. Barth, and O. Benson, “Enhancement of the zero phonon line emission from a single nitrogen vacancy center in a nanodiamond via coupling to a photonic crystal cavity,” Appl. Phys. Lett. 97, 141108 (2010).
[Crossref]

J. F. Ziegler, M. D. Ziegler, and J. P. Biersack, “SRIM - The stopping and range of ions in matter (2010),” Nucl. Instrum. Methods. Phys. Res. B 268, 1818–1823 (2010).
[Crossref]

D. M. Toyli, C. D. Weis, G. D. Fuchs, T. Schenkel, and D. D. Awschalom, “Chip-Scale Nanofabrication of Single Spins and Spin Arrays in Diamond,” Nano Lett. 10, 3168–3172 (2010).
[Crossref] [PubMed]

J. Riedrich-Möller, E. Neu, and C. Becher, “Design of microcavities in diamond-based photonic crystals by Fourier-and real-space analysis of cavity fields,” Photonics and Nanostructures - Fundamentals and Applications 8, 150–162 (2010).
[Crossref]

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Appl. Phys. Express (1)

Appl. Phys. Lett. (5)

Journal of the Optical Society of America B (1)

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Microelectron. Eng. (2)

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Nano Lett. (5)

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Nat. Commun. (1)

Nat. Nanotech. (1)

Nat. Photon. (1)

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Phys. Rev. X (2)

physica status solidi (a) (1)

Physical Review (1)

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Fig. 1 Illustration of a spin-photon interface. To enable efficient spin—photon interaction, the optical dipole of the associated electron spin is coupled to an optical cavity, here an L3 cavity. The inset schematics shows the nitrogen vacancy (NV) center in diamond coupled to an optical cavity. g, κ, and γ are the Rabi frequency, the cavity dissipation rate, and NV spontaneous emission rate, respectively. N is nitrogen, V vacancy, and the dark gray circles represent carbon.

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Fig. 2 Design and properties of phonic crystal cavities. a) |E|² distribution of L3 cavity with three missing holes; design similar to [27]. The left and right inset show a vertical and horizontal cut, respectively. b) |E|² distribution of M0 cavity with no missing but shifted holes, design similar to [28].

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Fig. 3 Illustration of the fabrication process. The sample preparation and nanopatterning are detailed in Ref. [32]. In addition to this method, we use the Si mask both for diamond pattering (step 3, oxygen dry etch) as well as implantation mask for ¹⁵N (step 4, implantation). By using the same mask for both steps, we achieve inherent self-alignment of the nanostructure to the implantation aperture. .

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Fig. 4 a) Scanning electron micrograph (SEM) of silicon hard mask for dry etching and ion implantation. The photonic crystal contains three L3 cavities as well as one M0 cavity (bottom right, dotted circle). Inset: Zoom-in. b) SEM of patterned diamond membrane. At the position of the implantation apertures no surface damage is visible, indicating the very slow etch rate due to etching lag reduction [33]. The SEM was not taken on the highest quality sample, samples that showed the reported Q-factors were not imaged in the scanning electron microscope as this can lead to NV charge conversion and even permanent bleaching of the NV.

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Fig. 5 Photoluminescence raster scans of three different photonic crystal areas with each four cavities (as in Fig. 4(a))) in sample region A. The scan reveals the distribution of fluorescent NV centers. The red dots indicate the approximate position of the cavity maxima where spectra where taken. One or several NVs are indicated by a red dot with black circle, cavity maxima with no NV by red dots with white circle. As expected, at the cavity positions, hence the position of the implantation aperture, the NV density is much higher compared to the photonic crystal region. The unit on the x- and y-axes is μm.

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Fig. 6 Statistical analysis of coupled NV-cavity systems. The number of NVs per cavity is plotted and the distribution is fitted according to a Poisson distribution. For sample region A (left plot) and B (right plot) we estimate an average occurrence of 1.1 ± 0.2 and ∼3 NVs per cavity, yielding in a ∼63% and ∼95% probability of finding at least one NV per cavity, respectively. The method for this analysis is detailed in the main text.

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Fig. 7 Spectrum of a single NV coupled to an L3 cavity with an estimated F_int = 26 ± 3. The blue line is a fit to the data with three Lorentian functions for the cavity resonances and a Gaussian function for a simplified representation of the broad NV phonon sideband fluorescence. Comparing the peak maximum intensity with the sideband intensity at the same spectral position yields the given intensity enhancement. Right: Second-order auto-correlation of the cavity coupled single NV. The fit (red curve) yields g²(0) ∼ 0.38.

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Fig. 8 M0 cavities coupled to single targeted NVs. a) Spectrum of enhanced ZPL at 638 nm and PSB. Several resonances are visible at 634.9 nm, 638.4 nm, and 655.7 nm, with Q = 1020, Q = 1550, and Q = 3950, respectively. Fitting the data as discussed in the main text, we determine F_int ∼ 12, F_int ∼ 20 F_int ∼ 43, respectively, for this single NV. Particularly relevant is the cavity resonance at 638.4 nm where the NV ZPL is located. b) Another single NV—M0 cavity system with narrow resonance (Q = 3280) at 697.2 nm enhancing the phonon sideband. Fitting yields an enhancement of the photon rate density by a factor of F_int = 93 ± 7. The blue lines are fits to the data as detailed in the main text.

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Fig. 9 Temperature tuning of L3 cavity and Purcell enhancement of a single ZPL. This NV, in contrast to the data above was created by random nitrogen implantation before nanofabrication. The spectra at 14 K and 19 K are normalized to the spectrum at 12.5 K via the ZPL₁ intensity. The inset in the left plot indicates a cavity resonance with an estimated quality factor Q ∼ 8000, indicating the high quality fabrication but at the same time by far non-ideal localization of the NV. The red line is a double Lorentian fit to the data.

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Equations (1)

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F_{ZPL} = ξ F_{ZPL}^{max} \frac{1}{1 + 4 Q^{2} {(λ_{ZPL} / λ_{cav} - 1)}^{2}}