Abstract

Two-dimensional semiconducting analogues of graphene, like monolayer molybdenum diselenide (MoSe2), provide a rich platform for optoelectronics. We study sharp localized photoluminescence (PL) emission from exfoliated MoSe2 flakes. These emission signatures are present in single layers as well as bi- and few layer flakes at low temperatures. The PL from these defects saturate at a lower power than the neutral and charged excitons of the monolayer MoSe2 and are stable against multiple heating and cooling cycles. We study the Zeeman effect in these emitters through magneto-optical photoluminescence studies and derive a g-factor of around 4 which is similar to the delocalized excitons in MoSe2.

© 2016 Optical Society of America

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  1. K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
    [Crossref]
  2. H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
    [Crossref]
  3. K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
    [Crossref] [PubMed]
  4. A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
    [Crossref] [PubMed]
  5. A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
    [Crossref]
  6. Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
    [Crossref]
  7. D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
    [Crossref]
  8. K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
    [Crossref] [PubMed]
  9. G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.
  10. A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
    [Crossref]
  11. Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
    [Crossref]
  12. M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
    [Crossref]
  13. C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
    [Crossref]
  14. P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2, 347 (2015).
    [Crossref]
  15. T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
    [Crossref]
  16. A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
    [Crossref]
  17. J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
    [Crossref] [PubMed]
  18. I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
    [Crossref] [PubMed]
  19. S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in Mono- and Bilayer WSe2,” Nano Letters 15, 7567–7573 (2015). PMID: .
    [Crossref] [PubMed]
  20. T. Schmidt, K. Lischka, and W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Physical Review B 45, 8989–8994 (1992).
    [Crossref]
  21. S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
    [Crossref] [PubMed]
  22. Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
    [Crossref] [PubMed]
  23. W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
    [Crossref]
  24. S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
    [Crossref]
  25. D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
    [Crossref]
  26. A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
    [Crossref]

2016 (2)

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
[Crossref]

2015 (8)

S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in Mono- and Bilayer WSe2,” Nano Letters 15, 7567–7573 (2015). PMID: .
[Crossref] [PubMed]

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
[Crossref]

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
[Crossref]

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2, 347 (2015).
[Crossref]

K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
[Crossref]

2014 (3)

K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
[Crossref] [PubMed]

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

2013 (2)

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

2012 (3)

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
[Crossref] [PubMed]

D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
[Crossref]

2010 (2)

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

2009 (1)

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
[Crossref] [PubMed]

1998 (1)

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

1996 (1)

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

1992 (1)

T. Schmidt, K. Lischka, and W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Physical Review B 45, 8989–8994 (1992).
[Crossref]

Aharonovich, I.

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
[Crossref] [PubMed]

Aivazian, G.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

Allain, A. V.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
[Crossref]

Anderson, Z.

D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
[Crossref]

Arefe, G.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

Arora, A.

M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

Ataca, C.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

Beams, R.

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
[Crossref]

K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

Bowers, J. E.

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

Branny, A.

A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
[Crossref]

Bratschitsch, R.

Bray, K.

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

Buscema, M.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2, 347 (2015).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

Cai, L.H.

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Castellanos-Gomez, A.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2, 347 (2015).
[Crossref]

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

Castelletto, S.

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
[Crossref] [PubMed]

Chakraborty, C.

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
[Crossref]

K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

Charbonneau, S.

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

Chen, M.-C.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Cheng, W. Q.

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Cherkez, V.

M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

Chernikov, A.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

Chim, C.-Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Clark, G.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Cui, X.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

Czaplewski, D. A.

G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.

Dai, J.

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

de Mello Donegá, C.

Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
[Crossref] [PubMed]

Ding, X.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Fafard, S.

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

Fan, W.

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D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
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K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
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K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
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M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
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J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
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M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
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I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
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K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
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K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
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Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
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S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
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Molenaar, R.

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M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

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K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

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S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
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Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Park, J.

D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
[Crossref]

K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
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S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
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Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
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M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
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I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
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D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
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Riemersma, C.

Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
[Crossref] [PubMed]

Rigosi, A.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

Robert, C.

A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
[Crossref]

Ross, J. S.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

Schaibley, J. R.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
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Schmidt, R.

Schmidt, T.

T. Schmidt, K. Lischka, and W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Physical Review B 45, 8989–8994 (1992).
[Crossref]

Schneider, R.

Shan, J.

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

Sidler, M.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
[Crossref]

Simpson, D. A.

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
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Singh, V.

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

Smirnov, D.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

Splendiani, A.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Srivastava, A.

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
[Crossref]

Stacey, A.

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
[Crossref] [PubMed]

Stanev, T. K.

G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.

Steele, G. A.

P. Tonndorf, R. Schmidt, R. Schneider, J. Kern, M. Buscema, G. A. Steele, A. Castellanos-Gomez, H. S. J. van der Zant, S. Michaelis de Vasconcellos, and R. Bratschitsch, “Single-photon emission from localized excitons in an atomically thin semiconductor,” Optica 2, 347 (2015).
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A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

Stern, N. P.

G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.

Suh, J.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

Sun, L.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Tongay, S.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

Tonndorf, P.

Toth, M.

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

Tran, T. T.

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

Vamivakas, A. N.

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
[Crossref]

K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

van der Zande, A. M.

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

van der Zant, H. S. J.

Veuillen, J.-Y.

M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

Wang, B.

A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
[Crossref]

Wang, F.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Wang, G.

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

Wei, G.

G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.

Wei, Y.-J.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Wu, J.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

Wu, S.

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

Xiao, D.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
[Crossref]

Xie, X. G.

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Xu, X.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
[Crossref]

Yan, J.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

Yao, W.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
[Crossref]

Yu, H.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

Zant, H. S. J. v. d.

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

Zeng, H.

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

Zhang, Q.

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

Zhang, Y.

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Zhao, B.

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

Zhao, Y.

Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
[Crossref] [PubMed]

Zhong, Z. Y.

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Zhou, J.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

Zhou, J. M.

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Zólyomi, V.

D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
[Crossref]

Zulehner, W.

T. Schmidt, K. Lischka, and W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Physical Review B 45, 8989–8994 (1992).
[Crossref]

2D Materials (1)

A. Castellanos-Gomez, M. Buscema, R. Molenaar, V. Singh, L. Janssen, H. S. J. v. d. Zant, and G. A. Steele, “Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping,” 2D Materials 1, 011002 (2014).
[Crossref]

ACS Nano (1)

Y. Zhao, C. Riemersma, F. Pietra, R. Koole, C. de Mello Donegá, and A. Meijerink, “High-Temperature Luminescence Quenching of Colloidal Quantum Dots,” ACS Nano 6, 9058–9067 (2012).
[Crossref] [PubMed]

Appl. Phys. Lett. (1)

A. Branny, B. Wang, S. Kumar, C. Robert, and X. Lassagne, “Discrete quantum dot like emitters in monolayer MoSe2: Spatial mapping, magneto-optics, and charge tuning,” Appl. Phys. Lett. 108, 142101 (2016).
[Crossref]

Nano Lett. (2)

K. M. Goodfellow, C. Chakraborty, R. Beams, L. Novotny, and A. N. Vamivakas, “Direct On-Chip Optical Plasmon Detection with an Atomically Thin Semiconductor,” Nano Lett. 15, 5477–5481 (2015).
[Crossref] [PubMed]

A. Splendiani, L. Sun, Y. Zhang, T. Li, J. Kim, C.-Y. Chim, G. Galli, and F. Wang, “Emerging photoluminescence in monolayer MoS2,” Nano Lett. 10, 1271–1275 (2010).
[Crossref] [PubMed]

Nano Letters (2)

I. Aharonovich, S. Castelletto, D. A. Simpson, A. Stacey, J. McCallum, A. D. Greentree, and S. Prawer, “Two-Level Ultrabright Single Photon Emission from Diamond Nanocrystals,” Nano Letters 9, 3191–3195 (2009).
[Crossref] [PubMed]

S. Kumar, A. Kaczmarczyk, and B. D. Gerardot, “Strain-induced spatial and spectral isolation of quantum emitters in Mono- and Bilayer WSe2,” Nano Letters 15, 7567–7573 (2015). PMID: .
[Crossref] [PubMed]

Nat Commun (1)

J. S. Ross, S. Wu, H. Yu, N. J. Ghimire, A. M. Jones, G. Aivazian, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Electrical control of neutral and charged excitons in a monolayer semiconductor,” Nat Commun 4, 1474 (2013).
[Crossref] [PubMed]

Nature Nanotech. (6)

H. Zeng, J. Dai, W. Yao, D. Xiao, and X. Cui, “Valley polarization in MoS2 monolayers by optical pumping,” Nature Nanotech. 7, 490–493 (2012).
[Crossref]

A. M. Jones, H. Yu, N. J. Ghimire, S. Wu, G. Aivazian, J. S. Ross, B. Zhao, J. Yan, D. G. Mandrus, D. Xiao, W. Yao, and X. Xu, “Optical generation of excitonic valley coherence in monolayer wse2,” Nature Nanotech. 8, 634–638 (2013).
[Crossref]

A. Srivastava, M. Sidler, A. V. Allain, D. S. Lembke, A. Kis, and A. Imamoğlu, “Optically active quantum dots in monolayer WSe2,” Nature Nanotech. 10, 491–496 (2015).
[Crossref]

Y.-M. He, G. Clark, J. R. Schaibley, Y. He, M.-C. Chen, Y.-J. Wei, X. Ding, Q. Zhang, W. Yao, X. Xu, C.-Y. Lu, and J.-W. Pan, “Single quantum emitters in monolayer semiconductors,” Nature Nanotech. 10, 497–502 (2015).
[Crossref]

M. Koperski, K. Nogajewski, A. Arora, V. Cherkez, P. Mallet, J.-Y. Veuillen, J. Marcus, P. Kossacki, and M. Potemski, “Single photon emitters in exfoliated WSe2 structures,” Nature Nanotech. 10, 503–506 (2015).
[Crossref]

C. Chakraborty, L. Kinnischtzke, K. M. Goodfellow, R. Beams, and A. N. Vamivakas, “Voltage-controlled quantum light from an atomically thin semiconductor,” Nature Nanotech. 10, 507–511 (2015).
[Crossref]

Nature Nanotechnology (1)

T. T. Tran, K. Bray, M. J. Ford, M. Toth, and I. Aharonovich, “Quantum emission from hexagonal boron nitride monolayers,” Nature Nanotechnology 11, 37–41 (2016).
[Crossref]

Optica (1)

Phys. Rev. Lett. (3)

Y. Li, J. Ludwig, T. Low, A. Chernikov, X. Cui, G. Arefe, Y. D. Kim, A. M. van der Zande, A. Rigosi, H. M. Hill, S. H. Kim, J. Hone, Z. Li, D. Smirnov, and T. F. Heinz, “Valley splitting and polarization by the zeeman effect in monolayer mose2,” Phys. Rev. Lett. 113, 266804 (2014).
[Crossref]

K. F. Mak, C. Lee, J. Hone, J. Shan, and T. F. Heinz, “Atomically thin MoS2: A new direct-gap semiconductor,” Phys. Rev. Lett. 105, 136805 (2010).
[Crossref]

D. Xiao, G. B. Liu, W. Feng, X. Xu, and W. Yao, “Coupled Spin and Valley Physics in Monolayers of MoS2 and Other Group-VI Dichalcogenides,” Phys. Rev. Lett. 108, 196802 (2012).
[Crossref]

Physical Review B (1)

T. Schmidt, K. Lischka, and W. Zulehner, “Excitation-power dependence of the near-band-edge photoluminescence of semiconductors,” Physical Review B 45, 8989–8994 (1992).
[Crossref]

Physical Review Letters (1)

D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormányos, V. Zólyomi, J. Park, and D. C. Ralph, “Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe2,” Physical Review Letters 114, 037401 (2015).
[Crossref]

Science (1)

K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, “The valley Hall effect in MoS2 transistors,” Science 344, 1489–1492 (2014).
[Crossref] [PubMed]

Surface Science (1)

S. Fafard, S. Raymond, G. Wang, R. Leon, D. Leonard, S. Charbonneau, J. L. Merz, P. M. Petroff, and J. E. Bowers, “Temperature effects on the radiative recombination in self-assembled quantum dots,” Surface Science 361–362, 778–782 (1996).
[Crossref]

Thin Solid Films (1)

W. Q. Cheng, X. G. Xie, Z. Y. Zhong, L.H. Cai, Q. Huang, and J. M. Zhou, “Photoluminescence from InAs quantum dots on GaAs(100),” Thin Solid Films 312, 287–290 (1998).
[Crossref]

Other (2)

G. Wei, D. A. Czaplewski, E. J. Lenferink, T. K. Stanev, I. W. Jung, and N. P. Stern, “Valley Polarization in Size-Tunable Monolayer Semiconductor Quantum Dots,” arXiv:1510.09135 [cond-mat] (2015). ArXiv: 1510.09135.

S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang, J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J. Li, J. C. Grossman, and J. Wu, “Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons,” Scientific Reports3, 2657 EP – (2013).
[Crossref] [PubMed]

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Figures (3)

Fig. 1
Fig. 1 Sample and PL spectra: (a) Optical micrograph of a region hosting the defect light emission in MoSe2 single layer flakes and near the interface of a bulk/bilayer flake. (b) PL spectrum from a defect free region of a single layer MoSe2 flake. (c) PL spectrum of defect from bilayer/bulk interface [region circled in yellow in Fig. 1(a)]. Inset shows a high resolution spectrum from the shaded region in grey. (d) PL spectrum of defect from single layer region [circled in blue in Fig. 1(a)]. (e) Spectral wandering data collected within a span of 60 seconds (each spectrum is acquired for 1 second). Integrated PL is projected above the 2D plot to show the inhomogeneous broadening from spectral wandering.
Fig. 2
Fig. 2 Power, polarization, and temperature dependence: (a) Defect (solid red circles) vs delocalized exciton emission from trion (open green square) and neutral exciton (open orange diamonds) as a function of incident power presenting the nonlinear and linear response to the incident power respectively. (b) Power dependence for two different defects showing saturation at different powers. Data from (a)–(b) are fit to Eq. (1). (c) Polar plot showing linearly polarized emission from two different emitters. The curve is a fit to the data. (d) Emission from defects as a function of temperature. Solid line is guide to the eye. Inset shows the emission spectra from the studied defect at different temperatures.
Fig. 3
Fig. 3 Magneto-optical studies of the defects in MoSe2: (a) Zeeman splitting of two emission lines as a function of magnetic field. The red and blue shaded region are guides to eye showing the trail of the two defect peaks D1 and D2. (b) Extracted peak energies of D1 and D2 from Fig. 3(a) showing the similar spectral wandering from the split doublets. (c),(d) The splitting energy from the two doublets are calculated and fit from where the g factors are calculated to be around 4.6 and 4.2 respectively. The resolution of the grating is within the size of the marker used. (e) Valley Zeeman splitting of the trion (black) and neutral exciton (red) in single layer MoSe2. Circularly polarized excitation source is used and signal is collected at the two senses of circular polarization, σ+ (solid curves) and σ(dotted curves). (f) Extracted splitting energy from (e) fit to equation 2. The error bars represent the CCD pixel size corresponding to the grating used for the spectra in (e).

Equations (2)

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I = I sat P / ( P sat + P )
Δ = g μ B B ,

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