Abstract

Scanning near-field photoluminescence (PL) spectroscopy has been applied to green emitting (202¯1) plane InGaN/GaN quantum well (QW) structures with 1, 5 and 10 wells to reveal the influence of the number of QWs on PL properties and their spatial variation. The data show no additional broadening or shift of the PL spectra related to the increase of the number of QWs. The QWs in the multiple QW structures are found to be nearly identical and the well width and/or alloy composition fluctuations uncorrelated. In spite that the thickness of the 10 QW structure is over the critical, no PL changes related to a structural relaxation have been detected.

© 2015 Optical Society of America

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  1. D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
    [Crossref]
  2. Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
    [Crossref]
  3. Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
    [Crossref]
  4. S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
    [Crossref]
  5. R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
    [Crossref]
  6. M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
    [Crossref]
  7. T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
    [Crossref]
  8. M. Adachi, “InGaN based green laser diodes on semipolar GaN substrate,” Jpn. J. Appl. Phys. 53(10), 100207 (2014).
    [Crossref]
  9. C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
    [Crossref]
  10. D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
    [Crossref]
  11. S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
    [Crossref]
  12. K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
    [Crossref]
  13. V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
    [Crossref]
  14. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
    [Crossref] [PubMed]
  15. A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
    [Crossref]
  16. A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
    [Crossref]
  17. S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
    [Crossref]
  18. S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
    [Crossref]
  19. S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
    [Crossref]
  20. Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
    [Crossref]
  21. S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
    [Crossref]
  22. S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
    [Crossref]
  23. A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
    [Crossref]
  24. M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
    [Crossref]

2015 (1)

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

2014 (5)

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

M. Adachi, “InGaN based green laser diodes on semipolar GaN substrate,” Jpn. J. Appl. Phys. 53(10), 100207 (2014).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

2013 (4)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

2012 (4)

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

2011 (2)

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

2010 (4)

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

2009 (1)

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

2008 (1)

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

1999 (1)

C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
[Crossref]

1995 (1)

Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
[Crossref] [PubMed]

Adachi, M.

M. Adachi, “InGaN based green laser diodes on semipolar GaN substrate,” Jpn. J. Appl. Phys. 53(10), 100207 (2014).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Akita, K.

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Becerra, D. L.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Chen, P.

Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
[Crossref] [PubMed]

Chung, R. B.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

DenBaars, S. P.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Enya, Y.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Farrell, R. M.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Feezell, D. F.

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

Fujito, K.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Funato, M.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Gallinat, C. S.

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Gelžinyte, K.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

Ha, J.

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Hardy, M. T.

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

Hoffmann, V.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Hsiung, C. L.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Hsu, P. S.

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

Huang, C. Y.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Ikegami, T.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Ivanov, R.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

Iza, M.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Kaneta, A.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Katayama, K.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Kawakami, Y.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

A. Kaneta, M. Funato, and Y. Kawakami, “Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra,” Phys. Rev. B 78(12), 125317 (2008).
[Crossref]

Kelchner, K. M.

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

Keller, S.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Kim, Y.-S.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

Knauer, A.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Kneissl, M.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Kobayashi, N. P.

Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
[Crossref] [PubMed]

Koslow, I.

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Koslow, I. L.

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

Kyono, T.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Landgren, G.

C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
[Crossref]

Lin, Y. D.

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Liuolia, V.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Lohr, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Madhukar, A.

Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
[Crossref] [PubMed]

Marcinkevicius, S.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
[Crossref]

Mishra, U. K.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Nakamura, S.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Nakamura, T.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Netzel, C.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Oh, S. H.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Ohta, H.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Pan, C. C.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Pfaff, N.

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

Pinos, A.

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

Ploch, S.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Pristovsek, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Pynn, C. D.

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

Rass, J.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Romanov, A. E.

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Saga, N.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Schade, L.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Schwarz, U.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Silfvenius, C.

C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
[Crossref]

Sonoda, J.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Speck, J. S.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Sumitomo, T.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Sumiyoshi, K.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Takagi, S.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Terao, Y.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Thalmair, J.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Tokuyama, S.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Tyagi, A.

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Ueno, M.

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Wernicke, T.

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Weyers, M.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

Wu, F.

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Wu, Y.-R.

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Xie, Q.

Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, “Vertically self-organized InAs quantum box islands on GaAs(100),” Phys. Rev. Lett. 75(13), 2542–2545 (1995).
[Crossref] [PubMed]

Yamamoto, S.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

Yang, T.-J.

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Yoshizumi, Y.

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Young, E. C.

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

Young, N.

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

Zhao, Y.

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

Zweck, J.

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

Appl. Phys. Express (5)

Y. Yoshizumi, M. Adachi, Y. Enya, T. Kyono, S. Tokuyama, T. Sumitomo, K. Akita, T. Ikegami, M. Ueno, K. Katayama, and T. Nakamura, “Continuous-wave operation of 520 nm green InGaN-based laser diodes on semi-polar {202¯1} GaN substrates,” Appl. Phys. Express 2(9), 092101 (2009).
[Crossref]

Y. D. Lin, S. Yamamoto, C. Y. Huang, C. L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes,” Appl. Phys. Express 3(8), 082001 (2010).
[Crossref]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. DenBaars, and S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates,” Appl. Phys. Express 3(12), 122102 (2010).
[Crossref]

A. Kaneta, Y.-S. Kim, M. Funato, Y. Kawakami, Y. Enya, T. Kyono, M. Ueno, and T. Nakamura, “Nanoscopic photoluminescence properties of a green-emitting InGaN single quantum well on a {202¯1} GaN substrate probed by scanning near-field optical microscopy,” Appl. Phys. Express 5(10), 102104 (2012).
[Crossref]

Y. Zhao, F. Wu, T.-J. Yang, Y.-R. Wu, S. Nakamura, and J. S. Speck, “Atomic-scale nanofacet structure in semipolar (202¯1¯) and (202¯1) InGaN single quantum wells,” Appl. Phys. Express 7(2), 025503 (2014).
[Crossref]

Appl. Phys. Lett. (7)

S. Marcinkevičius, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical properties of extended and localized states in m-plane InGaN quantum wells,” Appl. Phys. Lett. 102(10), 101102 (2013).
[Crossref]

S. Marcinkevičius, Y. Zhao, K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra,” Appl. Phys. Lett. 103(13), 131116 (2013).
[Crossref]

S. Marcinkevičius, K. Gelžinytė, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence,” Appl. Phys. Lett. 105(11), 111108 (2014).
[Crossref]

S. Marcinkevičius, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well,” Appl. Phys. Lett. 104(11), 111113 (2014).
[Crossref]

M. T. Hardy, P. S. Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, “Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures,” Appl. Phys. Lett. 100(20), 202103 (2012).
[Crossref]

V. Liuolia, A. Pinos, S. Marcinkevičius, Y. D. Lin, H. Ohta, S. P. DenBaars, and S. Nakamura, “Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy,” Appl. Phys. Lett. 97(15), 151106 (2010).
[Crossref]

D. L. Becerra, Y. Zhao, S. H. Oh, C. D. Pynn, K. Fujito, S. P. DenBaars, and S. Nakamura, “High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design,” Appl. Phys. Lett. 105(17), 171106 (2014).
[Crossref]

IEEE J. Quantum Electron. (1)

C. Silfvenius, G. Landgren, and S. Marcinkevicius, “Hole distribution in InGaAsP 1.3 µm multiple-quantum-well laser structures with different hole confinement energies,” IEEE J. Quantum Electron. 35(4), 603–607 (1999).
[Crossref]

J. Appl. Phys. (2)

K. Gelžinytė, R. Ivanov, S. Marcinkevičius, Y. Zhao, D. L. Becerra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “High spatial uniformity of photoluminescence spectra in semipolar (202¯1) plane InGaN/GaN quantum wells,” J. Appl. Phys. 117(2), 023111 (2015).
[Crossref]

A. E. Romanov, E. C. Young, F. Wu, A. Tyagi, C. S. Gallinat, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy,” J. Appl. Phys. 109(10), 103522 (2011).
[Crossref]

J. Cryst. Growth (2)

S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, J. Zweck, M. Weyers, and M. Kneissl, “Topography of (202¯1) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy,” J. Cryst. Growth 356, 70–74 (2012).
[Crossref]

M. Ueno, Y. Yoshizumi, Y. Enya, T. Kyono, M. Adachi, S. Takagi, S. Tokuyama, T. Sumitomo, K. Sumiyoshi, N. Saga, T. Ikegami, K. Katayama, and T. Nakamura, “InGaN-based true green laser diodes on novel semi-polar {202¯1} GaN substrates,” J. Cryst. Growth 315(1), 258–262 (2011).
[Crossref]

J. Disp. Tech. (1)

D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Semipolar (202¯1) InGaN/GaN light-emitting diodes for high-efficiency solid-state lighting,” J. Disp. Tech. 9(4), 190–198 (2013).
[Crossref]

Jpn. J. Appl. Phys. (3)

M. Adachi, “InGaN based green laser diodes on semipolar GaN substrate,” Jpn. J. Appl. Phys. 53(10), 100207 (2014).
[Crossref]

R. B. Chung, Y. D. Lin, I. Koslow, N. Pfaff, H. Ohta, J. Ha, S. P. DenBaars, and S. Nakamura, “Electroluminescence characterization of (202¯1) InGaN/GaN light emitting diodes with various wavelengths,” Jpn. J. Appl. Phys. 49(7), 070203 (2010).
[Crossref]

S. Keller, R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells,” Jpn. J. Appl. Phys. 52(8S), 08JC10 (2013).
[Crossref]

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[Crossref]

Phys. Rev. Lett. (1)

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[Crossref] [PubMed]

Semicond. Sci. Technol. (1)

T. Wernicke, L. Schade, C. Netzel, J. Rass, V. Hoffmann, S. Ploch, A. Knauer, M. Weyers, U. Schwarz, and M. Kneissl, “Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells,” Semicond. Sci. Technol. 27(2), 024014 (2012).
[Crossref]

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Figures (4)

Fig. 1
Fig. 1 Normalized far-field PL spectra of 1, 5 and 10 QW structures.
Fig. 2
Fig. 2 Maps of the surface morphology 20 2 ¯ 1 (a), the peak PL wavelength (b) and the peak PL intensity (c) for the SQW structure. Part (d) shows near-field PL spectra measured at points A and B indicated on the peak wavelength map.
Fig. 3
Fig. 3 Maps of the surface morphology (a), the peak PL wavelength (b), the peak PL intensity (c) and the FWHM for the 10 QW structure.
Fig. 4
Fig. 4 Correlation between the peak intensity and the FWHM for 1 (a), 5 (b) and 10 (c) QW structures.

Tables (1)

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Table 1 Statistical parameters of the near-field PL scans for the studied QW structures

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