Abstract

In this study, we report the enhanced light extraction efficiency of light emitting diode (LED) devices by employing multi-chip arrayed LED structures. We analyze the optoelectronic property of multi-chip arrayed LED structures with 16, 36 and 64 LED chips in the same 1 × 1 mm2 device as well as 2 × 2 and 3 × 3 mm2 devices. When compared with a conventional large area single-chip LED structure with the same device size, the multi-chip arrayed LED structures generally exhibit enhanced light extraction efficiency and electrical efficiency owing to the reduced current crowding effect. The effect of chip and device size on the LED performance is discussed.

© 2015 Optical Society of America

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  1. H. Menkara, R. A. Gilstrap, T. Morris, M. Minkara, B. K. Wagner, and C. J. Summers, “Development of nanophosphors for light emitting diodes,” Opt. Express 19(S4Suppl 4), A972–A981 (2011).
    [Crossref] [PubMed]
  2. Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
    [Crossref]
  3. A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
    [Crossref]
  4. P. Zhao and H. Zhao, “Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes,” Opt. Express 20(Suppl 5), A765–A776 (2012).
    [PubMed]
  5. I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
    [Crossref]
  6. A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
    [Crossref]
  7. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
    [Crossref]
  8. H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
    [Crossref]
  9. H. Y. Ryu and J. I. Shim, “Effect of current spreading on the efficiency droop of InGaN light-emitting diodes,” Opt. Express 19(4), 2886–2894 (2011).
    [Crossref] [PubMed]
  10. G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
    [Crossref]
  11. S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
    [Crossref]
  12. S. Oh, P. C. Su, Y. J. Yoon, S. Cho, J. H. Oh, T. Y. Seong, and K. K. Kim, “Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching,” Opt. Express 21(S6Suppl 6), A970–A976 (2013).
    [Crossref] [PubMed]
  13. C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
    [Crossref]
  14. S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
    [Crossref]
  15. Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
    [Crossref]
  16. J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
    [Crossref]
  17. E. N. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys. 43(35), 354005 (2010).
    [Crossref]
  18. X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
    [Crossref]
  19. H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
    [Crossref]
  20. Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
    [Crossref]
  21. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
    [Crossref]

2013 (5)

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

S. Oh, P. C. Su, Y. J. Yoon, S. Cho, J. H. Oh, T. Y. Seong, and K. K. Kim, “Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching,” Opt. Express 21(S6Suppl 6), A970–A976 (2013).
[Crossref] [PubMed]

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
[Crossref]

2012 (2)

C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
[Crossref]

P. Zhao and H. Zhao, “Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes,” Opt. Express 20(Suppl 5), A765–A776 (2012).
[PubMed]

2011 (2)

2010 (3)

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

E. N. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys. 43(35), 354005 (2010).
[Crossref]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

2008 (1)

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

2007 (2)

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

2006 (2)

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

2004 (1)

A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
[Crossref]

2002 (1)

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

2001 (1)

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

2000 (1)

H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
[Crossref]

Arif, R. A.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

Bai, Y.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Bayram, C.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Benisty, H.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Chang, S. P.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Chen, J. C.

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

Chen, J. R.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Chen, Z.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Cheng, Y.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Cho, C. Y.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Cho, J. H.

J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
[Crossref]

Cho, S.

Cicek, E.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Dai, Q.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

David, A.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

de Mierry, P.

H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
[Crossref]

DenBaars, S. P.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Evstratov, I. Y.

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

Fan, B.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Fujii, T.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Gautier, S.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Gilstrap, R. A.

Guo, E. Q.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Guo, X.

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

Hu, E. L.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Huang, S.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Hwang, H. S.

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

Hwu, F. S.

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

Jho, Y. D.

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

Jiang, H.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Karpov, S. Y.

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

Kim, H. S.

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

Kim, J. K.

J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Kim, K. K.

Kim, M. H.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Krier, A.

A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
[Crossref]

Kuo, H. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Lai, W. C.

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

Leroux, M.

H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
[Crossref]

Li, J. M.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Ling, S. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Liu, C. Y.

C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
[Crossref]

Liu, G.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

Liu, W. C.

C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
[Crossref]

Liu, Z. Q.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Lu, T. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Luo, H.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Ma, J.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Makarov, Y. N.

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

Matioli, E. N.

E. N. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys. 43(35), 354005 (2010).
[Crossref]

McClintock, R.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

McGroddy, K.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Menkara, H.

Minkara, M.

Monakhov, A.

A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
[Crossref]

Morris, T.

Mymrin, V. F.

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

Nakamura, S.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Oh, J. H.

Oh, S.

Park, S. J.

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

Park, Y.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Park, Y. J.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Piprek, J.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Piprek, J. C.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Razeghi, M.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Ryu, H. Y.

Schenk, H. P. D.

H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
[Crossref]

Schubert, E. F.

J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

Schubert, M. F.

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Seong, T. Y.

Sharma, R.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Sherstnev, V. V.

A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
[Crossref]

Sheu, G. J.

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

Sheu, J. K.

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

Shim, J. I.

Su, P. C.

Summers, C. J.

Tansu, N.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

Vashaei, Z.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Wagner, B. K.

Wang, G.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Wang, G. H.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Wang, L. C.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Wang, S. C.

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

Weisbuch, C.

E. N. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys. 43(35), 354005 (2010).
[Crossref]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Wu, Z.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Yahng, J. S.

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

Yang, C. T.

C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
[Crossref]

Yi, X. O.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Yoon, Y. J.

Zhang, Y.

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

Zhang, Y. Y.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Zhao, H.

P. Zhao and H. Zhao, “Analysis of light extraction efficiency enhancement for thin-film-flip-chip InGaN quantum wells light-emitting diodes with GaN micro-domes,” Opt. Express 20(Suppl 5), A765–A776 (2012).
[PubMed]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

Zhao, P.

Zheng, H. Y.

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Zheng, Z.

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

Appl. Phys. (Berl.) (1)

Y. Y. Zhang, H. Y. Zheng, E. Q. Guo, Y. Cheng, J. Ma, L. C. Wang, Z. Q. Liu, X. O. Yi, G. H. Wang, and J. M. Li, “Effects of light extraction efficiency to the efficiency droop of InGaN-based light-emitting diodes,” Appl. Phys. (Berl.) 113(1), 014502 (2013).
[Crossref]

Appl. Phys. Lett. (5)

S. C. Ling, T. C. Lu, S. P. Chang, J. R. Chen, H. C. Kuo, and S. C. Wang, “Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes,” Appl. Phys. Lett. 96(23), 231101 (2010).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. C. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007).
[Crossref]

Y. Zhang, S. Gautier, C. Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi, “Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111),” Appl. Phys. Lett. 102(1), 011106 (2013).
[Crossref]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett. 88(6), 061124 (2006).
[Crossref]

Electrochem. Soc. (1)

G. J. Sheu, F. S. Hwu, J. C. Chen, J. K. Sheu, and W. C. Lai, “Effect of the Electrode Pattern on Current Spreading and Driving Voltage in a GaN/Sapphire LED Chip,” Electrochem. Soc. 155(10), H836–H840 (2008).
[Crossref]

IEEE Trans. Electron. (1)

Y. D. Jho, J. S. Yahng, H. S. Kim, S. J. Park, and H. S. Hwang, “Design and Fabrication of Highly EfficientGaN-Based Light-Emitting Diodes,” IEEE Trans. Electron. 49(10), 1715–1722 (2002).
[Crossref]

J. Appl. Phys. (2)

X. Guo and E. F. Schubert, “Current crowding in GaN/InGaN light emitting diodes on insulating substrates,” J. Appl. Phys. 90(8), 4191–4195 (2001).
[Crossref]

H. P. D. Schenk, M. Leroux, and P. de Mierry, “Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck–Shockley relation,” J. Appl. Phys. 88(3), 1525–1534 (2000).
[Crossref]

J. Disp. Technol. (1)

S. Huang, B. Fan, Z. Chen, Z. Zheng, H. Luo, Z. Wu, G. Wang, and H. Jiang, “Lateral Current Spreading Effect on the Efficiency Droop in GaN Based Light-Emitting Diodes,” J. Disp. Technol. 9(4), 266–271 (2013).
[Crossref]

J. Phys. D Appl. Phys. (1)

E. N. Matioli and C. Weisbuch, “Impact of photonic crystals on LED light extraction efficiency: approaches and limits to vertical structure designs,” J. Phys. D Appl. Phys. 43(35), 354005 (2010).
[Crossref]

Laser Photonics Rev. (1)

J. H. Cho, E. F. Schubert, and J. K. Kim, “Efficiency droop in light-emitting diodes: Challenges and countermeasures,” Laser Photonics Rev. 7(3), 408–421 (2013).
[Crossref]

Microelectron. Reliab. (1)

C. T. Yang, W. C. Liu, and C. Y. Liu, “Measurement of thermal resistance of first-level Cu substrate used in high-power multi-chips LED package,” Microelectron. Reliab. 52(5), 855–860 (2012).
[Crossref]

Opt. Express (4)

Phys. Status Solidi (1)

I. Y. Evstratov, V. F. Mymrin, S. Y. Karpov, and Y. N. Makarov, “Current crowding effects on blue LED operation,” Phys. Status Solidi 3(6), 1645–1648 (2006).
[Crossref]

Semicond. Sci. Technol. (1)

A. Monakhov, A. Krier, and V. V. Sherstnev, “The effect of current crowding on the electroluminescence of InAs mid-infrared light emitting diodes,” Semicond. Sci. Technol. 19(3), 480–484 (2004).
[Crossref]

Solid-State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron. 54(10), 1119–1124 (2010).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1 (a) Schematics of fabrication process and (b) Schematic diagram of multi-chip arrayed LED device structures.
Fig. 2
Fig. 2 Near field images of single and multi-chip arrayed LED devices with an area of (a) 1 × 1 mm2, (b) 2 × 2 mm2 and (c) 3 × 3 mm2.
Fig. 3
Fig. 3 I-V characteristics of single and multi-chip arrayed LED devices with an area of (a) 1 × 1 mm2, (b) 2 × 2 mm2and (c) 3 × 3 mm2.
Fig. 4
Fig. 4 Electroluminescence spectra of single multi-chip arrayed LED devices at 350 mA with an area of (a) 1 × 1 mm2, (b) 2 × 2 mm2and (c) 3 × 3 mm2.
Fig. 5
Fig. 5 Current density of single and multi-chiparrayed LED structures considering active area.
Fig. 6
Fig. 6 Electroluminescence/active area vs. current graph of single and multi-chip arrayed LED devices with an area of (a) 1 × 1 mm2, (b) 2 × 2 mm2and (c) 3 × 3 mm2.
Fig. 7
Fig. 7 Normalized EQE of single and multi-chip arrayed LED devices.

Tables (1)

Tables Icon

Table 1 Active areas and ratios of various configurations of LED structures.

Equations (1)

Equations on this page are rendered with MathJax. Learn more.

η= numberofemittedphotons numberofinjectedelectrons × 1 junctionarea = ϕ e I E ph 1 A j

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