Abstract

The exciton localization effect in nonpolar a-plane GaN/AlGaN multiquantum wells (MQWs) structures with different quantum confinements (different well thicknesses or Al molar fractions of barrier) has been investigated by temperature dependent photoluminescence (PL). An “S-shaped” PL peak energy variation is observed in the spectra, indicating the existence of localized states. The exciton localization energy is larger in the MQWs with stronger quantum confinement. A good agreement of the localization energy is obtained by theoretical calculation assuming ± 5% fluctuation of well thickness, which demonstrates that potential minima caused by well thickness fluctuation are the major origin of exciton localization. In addition, the internal quantum efficiency shows more than 3 times enhancement with decreasing the well width from 8.1 to 2.7 nm due to the strong exciton localization which can prevent the carriers from trapping into the nonradiative recombination centers.

© 2015 Optical Society of America

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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
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    [Crossref]
  17. M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
    [Crossref]
  18. A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
    [Crossref]
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    [Crossref]
  20. Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967).
    [Crossref]
  21. I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
    [Crossref]
  22. F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
    [Crossref]
  23. E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
    [Crossref]
  24. H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
    [Crossref]

2014 (1)

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

2013 (2)

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

2012 (2)

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

2011 (2)

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

2010 (1)

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

2009 (3)

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

2008 (2)

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

2005 (2)

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

2004 (3)

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
[Crossref]

2003 (1)

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

2002 (1)

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

2000 (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

1999 (1)

K. P. O’Donnell, R. W. Martin, and P. G. Middleton, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

1967 (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967).
[Crossref]

Al Tahtamouni, T. M.

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells Appl. Phys. Lett.90(22), 221105 (2007).
[Crossref]

Arroyo, Y.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

Asif Khan, M.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Avrutin, V.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Badcock, T. J.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Balet, L.

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

Bellet-Amalric, E.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Brandt, O.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Bretagnon, T.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Butte, R.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

Chai, B.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Chang, C.-Y.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

Chen, C. Q.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Chichibu, S. F.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

Chou, M. M. C.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Corfdir, P.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

Craven, M. D.

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

Dai, J. N.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Dang, L. S.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Daudin, B.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Dawson, P.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

DenBaars, S. P.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

Deveaud, B.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

Deveaud-Pledran, B.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

Dussaigne, A.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Enjalbert, F.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Fang, Y. Y.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Feduniewicz, A.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Figge, S.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Fossard, F.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
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Friel, I.

I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
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Gaevski, M. E.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Gallagher, J. J.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Ganiere, J. D.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Ganiere, J.-D.

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

Gil, B.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Giraud, E.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

Gogneau, N.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Grahn, H. T.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Grandjean, N.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Grzegory, I.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Guizal, B.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Haskell, B. A.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

Hill, D. W.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Hollander, J. L.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Hommel, D.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
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Huang, H.-M.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
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Humphreys, C. J.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
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Ishibashi, A.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
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Izyumskaya, N.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Jalabert, D.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Jiang, H. X.

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells Appl. Phys. Lett.90(22), 221105 (2007).
[Crossref]

Johnston, C. F.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Kamler, G.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Kappers, M. J.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Kawaguchi, Y.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

Koida, T.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

Kuo, H.-C.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

Kuokstis, E.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Lan, Y.-P.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

Leach, J. H.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Lefebvre, P.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

Levrat, J.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Lin, J. Y.

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells Appl. Phys. Lett.90(22), 221105 (2007).
[Crossref]

Lu, T.-C.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

Lucznik, B.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Martin, D.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Martin, R. W.

K. P. O’Donnell, R. W. Martin, and P. G. Middleton, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

Maruska, H. P.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

McAleese, C.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Middleton, P. G.

K. P. O’Donnell, R. W. Martin, and P. G. Middleton, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

Monavarian, M.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Monemar, B.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Monroy, E.

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

Morkoç, H.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Moustakas, T. D.

I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
[Crossref]

Murotani, H.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

Nakamura, S.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

O’Donnell, K. P.

K. P. O’Donnell, R. W. Martin, and P. G. Middleton, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

Okur, S.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Özgür, Ü.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Paskov, P. P.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Paskova, T.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Perlin, P.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Phillips, R. T.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Porowski, S.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Ristic, J.

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

Rosales, D.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Sanchez, A. M.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Schifano, R.

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

Sedhain, A.

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells Appl. Phys. Lett.90(22), 221105 (2007).
[Crossref]

Shahmohammadi, M.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

Siekacz, M.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Simin, J. W.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Skierbiszewski, C.

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Sonderegger, S.

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

Sota, T.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

Speck, J. S.

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

Sridhara Rao, D. V.

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

Stadelmann, P.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

Sun, S. C.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Sun, W. H.

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

Suski, T.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Taguchi, T.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

Teisseyre, H.

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

Thomidis, C.

I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
[Crossref]

Tian, W.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Varshni, Y. P.

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967).
[Crossref]

Waltereit, P.

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Wang, S.-C.

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

Wu, F.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Wu, Z. H.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Yamada, Y.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

Yan, W. Y.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Yokogawa, T.

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

Zhang, F.

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

Zhang, J.

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

Zhu, T.

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

Appl. Phys. Lett. (8)

T. Koida, S. F. Chichibu, T. Sota, M. D. Craven, B. A. Haskell, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Improved quantum efficiency in nonpolar (11-20) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth,” Appl. Phys. Lett. 84(19), 3768 (2004).
[Crossref]

H. Teisseyre, C. Skierbiszewski, B. Lucznik, G. Kamler, A. Feduniewicz, M. Siekacz, T. Suski, P. Perlin, I. Grzegory, and S. Porowski, “Free and bound excitons in GaN/AlGaN homoepitaxial quantum wells grown on bulk GaN substrate along the nonpolar (11-20) direction,” Appl. Phys. Lett. 86(16), 162112 (2005).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical properties of GaN/AlGaN quantum wells grown on nonpolar substrates,” Appl. Phys. Lett. 93(10), 101901 (2008).
[Crossref]

E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. M. C. Chou, J. J. Gallagher, and B. Chai, “Polarization effects in photoluminescence of C- and M-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 81(22), 4130 (2002).
[Crossref]

P. Corfdir, J. Ristic, P. Lefebvre, T. Zhu, D. Martin, A. Dussaigne, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN,” Appl. Phys. Lett. 94(20), 201115 (2009).
[Crossref]

H.-M. Huang, C.-Y. Chang, Y.-P. Lan, T.-C. Lu, H.-C. Kuo, and S.-C. Wang, “Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness,” Appl. Phys. Lett. 100(26), 261901 (2012).
[Crossref]

M. D. Craven, P. Waltereit, J. S. Speck, and S. P. DenBaars, “Well-width dependence of photoluminescence emission from a-plane GaN/AlGaN multiple quantum wells,” Appl. Phys. Lett. 84(4), 496 (2004).
[Crossref]

I. Friel, C. Thomidis, and T. D. Moustakas, “Well width dependence of disorder effects on the optical properties of AlGaN/GaN quantum wells,” Appl. Phys. Lett. 85(15), 3068 (2004).
[Crossref]

J. Appl. Phys. (9)

F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, and C. Q. Chen, “Terahertz intersubband transition in GaN/AlGaN step quantum well,” J. Appl. Phys. 113(15), 154505 (2013).
[Crossref]

E. Monroy, N. Gogneau, F. Enjalbert, F. Fossard, D. Jalabert, E. Bellet-Amalric, L. S. Dang, and B. Daudin, “Le Si Dang, and B. Daudin, “Molecular-beam epitaxial growth and characterization of quaternary III–nitride compounds,” J. Appl. Phys. 94(5), 3121 (2003).
[Crossref]

H. Murotani, Y. Yamada, T. Taguchi, A. Ishibashi, Y. Kawaguchi, and T. Yokogawa, “Temperature dependence of localized exciton transitions in AlGaN ternary alloy epitaxial layers,” J. Appl. Phys. 104(5), 053514 (2008).
[Crossref]

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, J. D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Thermal carrier emission and nonradiative recombinations in nonpolar (Al,Ga)N/GaN quantum wells grown on bulk GaN,” J. Appl. Phys. 111(3), 033517 (2012).
[Crossref]

P. P. Paskov, R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel, “Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition,” J. Appl. Phys. 98(9), 093519 (2005).
[Crossref]

P. Corfdir, P. Lefebvre, J. Levrat, A. Dussaigne, J. D. Ganiere, D. Martin, J. Ristic, T. Zhu, N. Grandjean, and B. Deveaud-Pledran, “Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy,” J. Appl. Phys. 105(4), 043102 (2009).
[Crossref]

P. Corfdir, P. Lefebvre, L. Balet, S. Sonderegger, A. Dussaigne, T. Zhu, D. Martin, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence,” J. Appl. Phys. 107(4), 043524 (2010).
[Crossref]

D. Rosales, B. Gil, T. Bretagnon, B. Guizal, F. Zhang, S. Okur, M. Monavarian, N. Izyumskaya, V. Avrutin, Ü. Özgür, H. Morkoç, and J. H. Leach, “Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells,” J. Appl. Phys. 115(7), 073510 (2014).
[Crossref]

T. J. Badcock, P. Dawson, M. J. Kappers, C. McAleese, J. L. Hollander, C. F. Johnston, D. V. Sridhara Rao, A. M. Sanchez, and C. J. Humphreys, “Optical polarization anisotropy of a-plane GaN/AlGaN multiple quantum well structures grown on r-plane sapphire substrates,” J. Appl. Phys. 105(12), 123112 (2009).
[Crossref]

Jpn. J. Appl. Phys. (1)

P. Corfdir, A. Dussaigne, H. Teisseyre, T. Suski, I. Grzegory, P. Lefebvre, E. Giraud, M. Shahmohammadi, R. T. Phillips, J. D. Ganiere, N. Grandjean, and B. Deveaud, “Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates,” Jpn. J. Appl. Phys. 52(8S), 08JC01 (2013).
[Crossref]

Nature (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, and K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[Crossref] [PubMed]

Phys. Rev. B (1)

P. Corfdir, J. Levrat, A. Dussaigne, P. Lefebvre, H. Teisseyre, I. Grzegory, T. Suski, J.-D. Ganiere, N. Grandjean, and B. Deveaud-Pledran, “Intrinsic dynamics of weakly and strongly confined excitons in nonpolar nitride-based heterostructures,” Phys. Rev. B 83(24), 245326 (2011).
[Crossref]

Phys. Rev. Lett. (1)

K. P. O’Donnell, R. W. Martin, and P. G. Middleton, “Origin of Luminescence from InGaN Diodes,” Phys. Rev. Lett. 82(1), 237–240 (1999).
[Crossref]

Physica (1)

Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica 34(1), 149–154 (1967).
[Crossref]

Semicond. Sci. Technol. (1)

A. Dussaigne, P. Corfdir, J. Levrat, T. Zhu, D. Martin, P. Lefebvre, J. D. Ganiere, R. Butte, B. Deveaud-Pledran, N. Grandjean, Y. Arroyo, and P. Stadelmann, “One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells,” Semicond. Sci. Technol. 26(2), 025012 (2011).
[Crossref]

Other (1)

T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, and H. X. Jiang, “Growth and photoluminescence studies of a-plane AlN/AlxGa1−xN quantum wells Appl. Phys. Lett.90(22), 221105 (2007).
[Crossref]

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Figures (6)

Fig. 1
Fig. 1 (a) Cross-section TEM image of sample A taken along the [ ] zone axis. (b) The enlarged TEM image of the MQWs marked by the dash circle in (a).
Fig. 2
Fig. 2 (a) Schematic diagram of the a-plane GaN/AlGaN MQWs structure. (b) Normalized PL spectra of four samples measured at 11 K. (c) PL spectra of sample B measured at temperature ranging from 11 to 300 K.
Fig. 3
Fig. 3 (a) PL spectrum for sample B measured at 11 K with two Gaussian fitting curves representing the exciton emission and BSF emission, respectively. (b) Normalized integrated emission intensity for exciton emission and BSF emission, respectively.
Fig. 4
Fig. 4 Temperature dependence of PL peak energy (solid line with closed circles) for four samples. The solid line represents the least-squares fit of the peak energy with Varshni’s empirical formula.
Fig. 5
Fig. 5 (a) Localization energy Eloc as a function of quantum confinement energy. (b) Internal quantum efficiency as a function of localization energy Eloc. (c) Experimental (circles) and calculated (triangles) peak energy of four samples. (d) Localization energy Eloc (circles) and calculated peak energy fluctuation (triangles) of four samples.
Fig. 6
Fig. 6 Arrhenius plot of the integrated PL intensity for the four samples. The solid line represents the least-squares fit of experimental data using Eq. (2).

Tables (1)

Tables Icon

Table 1 Summary of the structure parameters and optical properties of the four samples

Equations (2)

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E g ( T ) = E g ( 0 ) α T 2 β + T ,
I ( T ) = I ( 0 ) 1 + A exp ( E a k B T ) + B exp ( E b k B T ) ,

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