Abstract

Abstract: Top optical quality nonlinear gallium selenide crystals doped with different sulfur concentrations (1.1, 2.5, 5, 7, 11 mass%) are grown by modified Bridgman method. Physical origins of inaccuracy in the measurement of THz o- and e-wave absorption spectra by THz-TDS are identified. Dominant absorption for o-wave is established for all crystal compositions. Frequency independent absorption within 0.3-2 THz is demonstrated. Phonon mode transformation is studied in detail. Phonon absorption peak for e-wave centered at 1.1 THz is recorded for the first time. It is shown that e-wave THz generation is preferable in GaSe:S (2.5-5 mass%) crystal.

© 2014 Optical Society of America

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2014 (4)

Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

J. Guo, D.-J. Li, J.-J. Xie, L.-M. Zhang, Z.-S. Feng, Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limit pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett.11(5), 055401 (2014).
[Crossref]

J. F. Molloy, M. Naftaly, Yu. M. Andreev, G. V. Lanskii, I. N. Lapin, A. I. Potekaev, K. A. Kokh, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Dispersion properties of GaS studied by THz-TDS,” CrysEngComm16(10), 1995–2000 (2014).
[Crossref]

Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
[Crossref]

2013 (2)

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

M. Naftaly, “Metrology issues and solutions in THz time-domain spectroscopy: noise, errors and calibration,” IEEE Sens. J.13(1), 8–17 (2013).
[Crossref]

2012 (4)

S.-A. Ku, W.-C. Chu, C.-W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express20(5), 5029–5037 (2012).
[Crossref] [PubMed]

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
[Crossref]

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

S. A. Ku, C. W. Luo, Yu. M. Andreev, and G. Lanskii, Comment on “GaSe1-xSx and GaSe1-xTex thick crystals for broadband terahertz pulses generation” [Applied Physics Letters 99, 081105 (2011)], Appl. Phys. Lett.100(13), 136103 (2012).
[Crossref]

2011 (8)

K. A. Kokh, Yu. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, and A. E. Kokh, “Growth of GaSe and GaS single crystals,” Cryst. Res. Technol.46(4), 327–330 (2011).
[Crossref]

Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, and A. N. Morozov, “Structural characterization of pure and doped GaSe by nonlinear optical method,” J. Cryst. Growth318(1), 1164–1166 (2011).
[Crossref]

K. Miyata, G. Marchev, A. Tyazhev, V. Panyutin, and V. Petrov, “Picosecond mid-infrared optical parametric amplifier based on the wide-bandgap GaS0.4Se0.6 pumped by a Nd:YAG laser system at 1064 nm,” Opt. Lett.36(10), 1785–1787 (2011).
[Crossref] [PubMed]

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
[Crossref]

V. Petrov, V. L. Panyutin, A. Tyazhev, G. Marchev, A. I. Zagumennyi, F. Rotermund, F. Noack, K. Miyata, L. D. Iskhakova, and A. F. Zerrouk, “GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm,” Laser Phys.21(4), 774–781 (2011).
[Crossref]

P. U. Jepsen, D. G. Cooke, and M. Koch, “Terahertz spectroscopy and imaging – Modern techniques and applications,” Laser Photon. Rev.5(1), 124–166 (2011).
[Crossref]

Z.-W. Luo, X.-A. Gu, W.-C. Zhu, W.-C. Tang, Yu. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng.19(2), 354–359 (2011).
[Crossref]

S.-A. Ku, W.-C. Chu, C.-W. Luo, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, T. I. Izaak, V. A. Svetlichnyi, and E. A. Vaytulevich, “Optical properties of Te-doped GaSe crystal,” Chinese Journal of Optics4, 660–666 (2011).

2010 (2)

Y. Geng, X. Tan, X. Li, and J. Yao, “Compact and widely tunable terahertz source based on a dual-wavelength intracavity optical parametric oscillation,” Appl. Phys. B99(1-2), 181–185 (2010).
[Crossref]

Y. J. Ding, Y. Jiang, G. Xu, and I. B. Zotova, “Recent progress on efficient generation of monochromatic THz pulses based on difference-frequency generation,” Proc. SPIE7600, 7600G (2010).
[Crossref]

2009 (6)

M. Kępińska, M. Nowak, P. Duka, and B. Kauch, “Spectrogoniometric determination of refractive indices of GaSe,” Thin Solid Films517(13), 3792–3796 (2009).
[Crossref]

Zs. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Electronic structure of substitutional defects and vacancies in GaSe,” J. Phys. Chem. Solids70(2), 344–355 (2009).
[Crossref]

C.-W. Chen, T.-T. Tang, S.-H. Lin, J. Y. Huang, C.-S. Chang, P.-K. Chung, S.-T. Yen, and C.-L. Pan, “Optical properties and potential applications of ε-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B26(9), A58–A65 (2009).
[Crossref]

M. M. Nazarov, A. P. Shkurinov, A. A. Angeluts, and D. A. Sapozhnikov, “On the choice of nonlinear optical and semiconductor converters of femtosecond laser into terahertz range,” Radiophys. and Quant. Electron.52(8), 536–545 (2009).
[Crossref]

M. Naftaly and R. Dudley, “Methodologies for determining the dynamic ranges and signal-to-noise ratios of terahertz time-domain spectrometers,” Opt. Lett.34(8), 1213–1215 (2009).
[Crossref] [PubMed]

M. Naftaly and R. Dudley, “Linearity calibration of amplitude and power measurements in terahertz systems and detectors,” Opt. Lett.34(5), 674–676 (2009).
[Crossref] [PubMed]

2008 (1)

2007 (2)

J.-I. Nishizawa, T. Sasaki, Y. Oyama, and T. Tanabe, “Aspects of point defects in coherent terahertz-wave spectroscopy,” Physica B401–402, 677–681 (2007).
[Crossref]

M. Naftaly and R. E. Miles, “Terahertz time-domain spectroscopy for material characterization,” Proc. IEEE95(8), 1658–1665 (2007).
[Crossref]

2006 (3)

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

C.-W. Chen, Y.-K. Hsu, J. Y. Huang, C.-S. Chang, J. Y. Zhang, and C. L. Pan, “Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal,” Opt. Express14(22), 10636–10644 (2006).
[Crossref] [PubMed]

Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: a novel approach,” Laser Phys.16(4), 562–570 (2006).
[Crossref]

2005 (3)

K. Allakhverdiev, J. Goldstein, N. Fernelius, D. Huseinova, E. Salaev, and A. Türker, “Low-temperature midinfrared absorption in GaSe,” Int. J. Infrared Millim. Waves26(3), 457–466 (2005).
[Crossref]

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87(18), 182104 (2005).
[Crossref]

W. Shi and Y. J. Ding, “Generation of backward terahertz waves in GaSe crystals,” Opt. Lett.30(14), 1861–1863 (2005).
[Crossref] [PubMed]

2004 (2)

T. Tanabe, K. Suto, J.-I. Nishizawa, and T. Sasaki, “Characteristics of terahertz-wave generation from GaSe crystals,” J. Phys. D.37(2), 155–163 (2004).
[Crossref]

W. Shi and Y. J. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 μm for variety of potential applications,” Appl. Phys. Lett.84(10), 1635–1637 (2004).
[Crossref]

2003 (2)

K. Allakhverdiev, N. Fernelius, F. Gashimzade, J. Goldstein, E. Salaev, and Z. Salaeva, “Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy,” J. Appl. Phys.93(6), 3336–3339 (2003).
[Crossref]

Y. J. Ding and W. Shi, “Widely-tunable, monochromatic, and high-power terahertz sources and their applications,” J. Nonlinear Opt. Phys. Mater.12(04), 557–585 (2003).
[Crossref]

2001 (1)

1998 (1)

Yu. M. Andreev, V. V. Apollonov, Yu. A. Shakir, G. A. Verozubova, and A. I. Gribenyukov, “Submillimeter waves generation with ZnGeP2 crystals,” J. Korean Phys. Soc.33(3), 356–361 (1998).

1996 (1)

L. Kador, D. Haarer, K. R. Allakhverdiev, and E. Y. Salaev, “Phase-matched second-harmonic generation at 789.5 nm in a GaSe crystal,” Appl. Phys. Lett.69(6), 731–733 (1996).
[Crossref]

1994 (1)

N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Crystal Growth and Charact.28(4), 275–353 (1994).
[Crossref]

1990 (1)

1977 (1)

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ε-GaSe,” Nuovo Cim.38(2), 159–167 (1977).
[Crossref]

1974 (1)

H. Suzuki and R. Mori, “Phase study on binary system GaSe,” Jpn. J. Appl. Phys.13(3), 417–423 (1974).
[Crossref]

Alfano, R. R.

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett.87(18), 182104 (2005).
[Crossref]

Allakhverdiev, K.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

K. Allakhverdiev, J. Goldstein, N. Fernelius, D. Huseinova, E. Salaev, and A. Türker, “Low-temperature midinfrared absorption in GaSe,” Int. J. Infrared Millim. Waves26(3), 457–466 (2005).
[Crossref]

K. Allakhverdiev, N. Fernelius, F. Gashimzade, J. Goldstein, E. Salaev, and Z. Salaeva, “Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy,” J. Appl. Phys.93(6), 3336–3339 (2003).
[Crossref]

Allakhverdiev, K. R.

L. Kador, D. Haarer, K. R. Allakhverdiev, and E. Y. Salaev, “Phase-matched second-harmonic generation at 789.5 nm in a GaSe crystal,” Appl. Phys. Lett.69(6), 731–733 (1996).
[Crossref]

Andreev, Y.

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

Andreev, Y. M.

Andreev, Yu.

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

Z.-W. Luo, X.-A. Gu, W.-C. Zhu, W.-C. Tang, Yu. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng.19(2), 354–359 (2011).
[Crossref]

Andreev, Yu. M.

J. F. Molloy, M. Naftaly, Yu. M. Andreev, G. V. Lanskii, I. N. Lapin, A. I. Potekaev, K. A. Kokh, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Dispersion properties of GaS studied by THz-TDS,” CrysEngComm16(10), 1995–2000 (2014).
[Crossref]

Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
[Crossref]

J. Guo, D.-J. Li, J.-J. Xie, L.-M. Zhang, Z.-S. Feng, Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limit pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett.11(5), 055401 (2014).
[Crossref]

Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
[Crossref]

S. A. Ku, C. W. Luo, Yu. M. Andreev, and G. Lanskii, Comment on “GaSe1-xSx and GaSe1-xTex thick crystals for broadband terahertz pulses generation” [Applied Physics Letters 99, 081105 (2011)], Appl. Phys. Lett.100(13), 136103 (2012).
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S.-A. Ku, W.-C. Chu, C.-W. Luo, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, T. I. Izaak, V. A. Svetlichnyi, and E. A. Vaytulevich, “Optical properties of Te-doped GaSe crystal,” Chinese Journal of Optics4, 660–666 (2011).

K. A. Kokh, Yu. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, and A. E. Kokh, “Growth of GaSe and GaS single crystals,” Cryst. Res. Technol.46(4), 327–330 (2011).
[Crossref]

Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, and A. N. Morozov, “Structural characterization of pure and doped GaSe by nonlinear optical method,” J. Cryst. Growth318(1), 1164–1166 (2011).
[Crossref]

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
[Crossref]

Yu. M. Andreev, V. V. Apollonov, Yu. A. Shakir, G. A. Verozubova, and A. I. Gribenyukov, “Submillimeter waves generation with ZnGeP2 crystals,” J. Korean Phys. Soc.33(3), 356–361 (1998).

Angeluts, A. A.

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
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M. M. Nazarov, A. P. Shkurinov, A. A. Angeluts, and D. A. Sapozhnikov, “On the choice of nonlinear optical and semiconductor converters of femtosecond laser into terahertz range,” Radiophys. and Quant. Electron.52(8), 536–545 (2009).
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Antonioli, G.

G. Antonioli, D. Bianchi, V. Canevari, U. Emiliani, and P. Podini, “Optical constants of GaSe at the fundamental absorption edge,” Phys. Status Solidi81(2), 665–670 (1977) (b).
[Crossref]

Apollonov, V. V.

Yu. M. Andreev, V. V. Apollonov, Yu. A. Shakir, G. A. Verozubova, and A. I. Gribenyukov, “Submillimeter waves generation with ZnGeP2 crystals,” J. Korean Phys. Soc.33(3), 356–361 (1998).

Atuchin, V.

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

Atuchin, V. V.

Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
[Crossref]

Balkanski, M.

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ε-GaSe,” Nuovo Cim.38(2), 159–167 (1977).
[Crossref]

Baykara, T.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

Bianchi, D.

G. Antonioli, D. Bianchi, V. Canevari, U. Emiliani, and P. Podini, “Optical constants of GaSe at the fundamental absorption edge,” Phys. Status Solidi81(2), 665–670 (1977) (b).
[Crossref]

Canevari, V.

G. Antonioli, D. Bianchi, V. Canevari, U. Emiliani, and P. Podini, “Optical constants of GaSe at the fundamental absorption edge,” Phys. Status Solidi81(2), 665–670 (1977) (b).
[Crossref]

Chang, C.-S.

Chen, C.-W.

Chu, J.

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

Chu, W. C.

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
[Crossref]

Chu, W.-C.

S.-A. Ku, W.-C. Chu, C.-W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express20(5), 5029–5037 (2012).
[Crossref] [PubMed]

S.-A. Ku, W.-C. Chu, C.-W. Luo, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, T. I. Izaak, V. A. Svetlichnyi, and E. A. Vaytulevich, “Optical properties of Te-doped GaSe crystal,” Chinese Journal of Optics4, 660–666 (2011).

Chung, P.-K.

Cooke, D. G.

P. U. Jepsen, D. G. Cooke, and M. Koch, “Terahertz spectroscopy and imaging – Modern techniques and applications,” Laser Photon. Rev.5(1), 124–166 (2011).
[Crossref]

Ding, Y. J.

Y. J. Ding, Y. Jiang, G. Xu, and I. B. Zotova, “Recent progress on efficient generation of monochromatic THz pulses based on difference-frequency generation,” Proc. SPIE7600, 7600G (2010).
[Crossref]

Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: a novel approach,” Laser Phys.16(4), 562–570 (2006).
[Crossref]

W. Shi and Y. J. Ding, “Generation of backward terahertz waves in GaSe crystals,” Opt. Lett.30(14), 1861–1863 (2005).
[Crossref] [PubMed]

W. Shi and Y. J. Ding, “A monochromatic and high-power terahertz source tunable in the ranges of 2.7–38.4 and 58.2–3540 μm for variety of potential applications,” Appl. Phys. Lett.84(10), 1635–1637 (2004).
[Crossref]

Y. J. Ding and W. Shi, “Widely-tunable, monochromatic, and high-power terahertz sources and their applications,” J. Nonlinear Opt. Phys. Mater.12(04), 557–585 (2003).
[Crossref]

I. B. Zotova and Y. J. Ding, “Spectral measurements of two-photon absorption coefficients for CdSe and GaSe crystals,” Appl. Opt.40(36), 6654–6658 (2001).
[Crossref] [PubMed]

Dudley, R.

Duka, P.

M. Kępińska, M. Nowak, P. Duka, and B. Kauch, “Spectrogoniometric determination of refractive indices of GaSe,” Thin Solid Films517(13), 3792–3796 (2009).
[Crossref]

Ellialtioglu, S.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

Emiliani, U.

G. Antonioli, D. Bianchi, V. Canevari, U. Emiliani, and P. Podini, “Optical constants of GaSe at the fundamental absorption edge,” Phys. Status Solidi81(2), 665–670 (1977) (b).
[Crossref]

Evdokimov, M. G.

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
[Crossref]

Exter, M.

Fattinger, C.

Feng, Z. S.

Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
[Crossref]

Feng, Z.-S.

Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

J. Guo, D.-J. Li, J.-J. Xie, L.-M. Zhang, Z.-S. Feng, Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limit pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett.11(5), 055401 (2014).
[Crossref]

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

H.-Z. Zhang, Z.-H. Kang, Yu. Jiang, J.-Yu. Gao, F.-G. Wu, Z.-S. Feng, Y. M. Andreev, G. V. Lanskii, A. N. Morozov, E. I. Sachkova, and S. Yu. Sarkisov, “SHG phase matching in GaSe and mixed GaSe1-xSx, x≤0.412, crystals at room temperature,” Opt. Express16(13), 9951–9957 (2008).
[Crossref] [PubMed]

Fernelius, N.

K. Allakhverdiev, J. Goldstein, N. Fernelius, D. Huseinova, E. Salaev, and A. Türker, “Low-temperature midinfrared absorption in GaSe,” Int. J. Infrared Millim. Waves26(3), 457–466 (2005).
[Crossref]

K. Allakhverdiev, N. Fernelius, F. Gashimzade, J. Goldstein, E. Salaev, and Z. Salaeva, “Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy,” J. Appl. Phys.93(6), 3336–3339 (2003).
[Crossref]

Fernelius, N. C.

Zs. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Electronic structure of substitutional defects and vacancies in GaSe,” J. Phys. Chem. Solids70(2), 344–355 (2009).
[Crossref]

N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Crystal Growth and Charact.28(4), 275–353 (1994).
[Crossref]

Gao, J. Y.

Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
[Crossref]

Gao, J.-Y.

Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

Gao, J.-Yu.

Gashimzade, F.

K. Allakhverdiev, N. Fernelius, F. Gashimzade, J. Goldstein, E. Salaev, and Z. Salaeva, “Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy,” J. Appl. Phys.93(6), 3336–3339 (2003).
[Crossref]

Geng, Y.

Y. Geng, X. Tan, X. Li, and J. Yao, “Compact and widely tunable terahertz source based on a dual-wavelength intracavity optical parametric oscillation,” Appl. Phys. B99(1-2), 181–185 (2010).
[Crossref]

Goldstein, J.

K. Allakhverdiev, J. Goldstein, N. Fernelius, D. Huseinova, E. Salaev, and A. Türker, “Low-temperature midinfrared absorption in GaSe,” Int. J. Infrared Millim. Waves26(3), 457–466 (2005).
[Crossref]

K. Allakhverdiev, N. Fernelius, F. Gashimzade, J. Goldstein, E. Salaev, and Z. Salaeva, “Anisotropy of optical absorption in GaSe studied by midinfrared spectroscopy,” J. Appl. Phys.93(6), 3336–3339 (2003).
[Crossref]

Gorobets, V. A.

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
[Crossref]

Gribenyukov, A. I.

Yu. M. Andreev, V. V. Apollonov, Yu. A. Shakir, G. A. Verozubova, and A. I. Gribenyukov, “Submillimeter waves generation with ZnGeP2 crystals,” J. Korean Phys. Soc.33(3), 356–361 (1998).

Grischkowsky, D.

Gu, X.-A.

Z.-W. Luo, X.-A. Gu, W.-C. Zhu, W.-C. Tang, Yu. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng.19(2), 354–359 (2011).
[Crossref]

Guo, J.

Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

J. Guo, D.-J. Li, J.-J. Xie, L.-M. Zhang, Z.-S. Feng, Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limit pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett.11(5), 055401 (2014).
[Crossref]

Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
[Crossref]

Haarer, D.

L. Kador, D. Haarer, K. R. Allakhverdiev, and E. Y. Salaev, “Phase-matched second-harmonic generation at 789.5 nm in a GaSe crystal,” Appl. Phys. Lett.69(6), 731–733 (1996).
[Crossref]

Hashimzade, F.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

Hsu, Y.-K.

Huang, J.

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

Huang, J. Y.

Huang, Z.

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

Huseinova, D.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
[Crossref]

K. Allakhverdiev, J. Goldstein, N. Fernelius, D. Huseinova, E. Salaev, and A. Türker, “Low-temperature midinfrared absorption in GaSe,” Int. J. Infrared Millim. Waves26(3), 457–466 (2005).
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Iskhakova, L. D.

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Z. S. Feng, H. H. Kang, X. M. Li, Z. B. Wang, J. Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals,” AIP Advances4(3), 037104 (2014).
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J. F. Molloy, M. Naftaly, Yu. M. Andreev, G. V. Lanskii, I. N. Lapin, A. I. Potekaev, K. A. Kokh, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Dispersion properties of GaS studied by THz-TDS,” CrysEngComm16(10), 1995–2000 (2014).
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K. A. Kokh, Yu. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, and A. E. Kokh, “Growth of GaSe and GaS single crystals,” Cryst. Res. Technol.46(4), 327–330 (2011).
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Ku, S.-A.

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S.-A. Ku, W.-C. Chu, C.-W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express20(5), 5029–5037 (2012).
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S.-A. Ku, W.-C. Chu, C.-W. Luo, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, T. I. Izaak, V. A. Svetlichnyi, and E. A. Vaytulevich, “Optical properties of Te-doped GaSe crystal,” Chinese Journal of Optics4, 660–666 (2011).

Kulibekov, A. M.

K. Allakhverdiev, T. Baykara, S. Ellialtioglu, F. Hashimzade, D. Huseinova, K. Kawamura, A. A. Kaya, A. M. Kulibekov, and S. Onari, “Lattice vibrations of pure and doped GaSe,” Mater. Res. Bull.41, 751–763 (2006).
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Lanskii, G.

J. Huang, Z. Huang, J. Tong, C. Ouyang, J. Chu, Yu. Andreev, K. Kokh, G. Lanskii, and A. Shaiduko, “Intensive terahertz emission from GaSe0.91S0.09 under collinear difference frequency generation,” Appl. Phys. Lett.103(8), 81104 (2013).
[Crossref]

S. A. Ku, C. W. Luo, Yu. M. Andreev, and G. Lanskii, Comment on “GaSe1-xSx and GaSe1-xTex thick crystals for broadband terahertz pulses generation” [Applied Physics Letters 99, 081105 (2011)], Appl. Phys. Lett.100(13), 136103 (2012).
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Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
[Crossref]

S.-A. Ku, W.-C. Chu, C.-W. Luo, Y. M. Andreev, G. Lanskii, A. Shaidukoi, T. Izaak, V. Svetlichnyi, K. H. Wu, and T. Kobayashi, “Optimal Te-doping in GaSe for non-linear applications,” Opt. Express20(5), 5029–5037 (2012).
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Z.-W. Luo, X.-A. Gu, W.-C. Zhu, W.-C. Tang, Yu. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng.19(2), 354–359 (2011).
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[Crossref]

J. Guo, D.-J. Li, J.-J. Xie, L.-M. Zhang, Z.-S. Feng, Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, and V. A. Svetlichnyi, “Limit pump intensity for sulfur-doped gallium selenide crystals,” Laser Phys. Lett.11(5), 055401 (2014).
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Z.-S. Feng, J. Guo, J.-J. Xie, L.-M. Zhang, J.-Y. Gao, Yu. M. Andreev, T. I. Izaak, K. A. Kokh, G. V. Lanskii, A. V. Shaiduko, A. V. Shabalina, and V. A. Svetlichnyi, “GaSe:Er3+ crystals for SHG in the infrared spectral range,” Opt. Commun.318, 205–211 (2014).
[Crossref]

S.-A. Ku, W. C. Chu, C.-W. Luo, A. A. Angeluts, M. G. Evdokimov, M. M. Nazarov, A. P. Shkurinov, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, K. A. Kokh, and V. A. Svetlichnyi, “Optical properties and application of GaSe:AgGaSe2 crystals,” Chinese Journal of Optics5(1), 57–63 (2012).
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S.-A. Ku, W.-C. Chu, C.-W. Luo, Yu. M. Andreev, G. V. Lanskii, A. V. Shaiduko, T. I. Izaak, V. A. Svetlichnyi, and E. A. Vaytulevich, “Optical properties of Te-doped GaSe crystal,” Chinese Journal of Optics4, 660–666 (2011).

Yu. M. Andreev, K. A. Kokh, G. V. Lanskii, and A. N. Morozov, “Structural characterization of pure and doped GaSe by nonlinear optical method,” J. Cryst. Growth318(1), 1164–1166 (2011).
[Crossref]

K. A. Kokh, Yu. M. Andreev, V. A. Svetlichnyi, G. V. Lanskii, and A. E. Kokh, “Growth of GaSe and GaS single crystals,” Cryst. Res. Technol.46(4), 327–330 (2011).
[Crossref]

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
[Crossref]

H.-Z. Zhang, Z.-H. Kang, Yu. Jiang, J.-Yu. Gao, F.-G. Wu, Z.-S. Feng, Y. M. Andreev, G. V. Lanskii, A. N. Morozov, E. I. Sachkova, and S. Yu. Sarkisov, “SHG phase matching in GaSe and mixed GaSe1-xSx, x≤0.412, crystals at room temperature,” Opt. Express16(13), 9951–9957 (2008).
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J. F. Molloy, M. Naftaly, Yu. M. Andreev, G. V. Lanskii, I. N. Lapin, A. I. Potekaev, K. A. Kokh, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Dispersion properties of GaS studied by THz-TDS,” CrysEngComm16(10), 1995–2000 (2014).
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Luo, Z.-W.

Z.-W. Luo, X.-A. Gu, W.-C. Zhu, W.-C. Tang, Yu. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng.19(2), 354–359 (2011).
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J. F. Molloy, M. Naftaly, Yu. M. Andreev, G. V. Lanskii, I. N. Lapin, A. I. Potekaev, K. A. Kokh, A. V. Shabalina, A. V. Shaiduko, and V. A. Svetlichnyi, “Dispersion properties of GaS studied by THz-TDS,” CrysEngComm16(10), 1995–2000 (2014).
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Zhang, L.-M.

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Z.-S. Feng, J. Guo, Z.-H. Kang, Y. Jiang, J.-Y. Gao, J.-J. Xie, L.-M. Zhang, V. Atuchin, Y. Andreev, G. Lanskii, and A. Shaiduko, “Tellurium and sulphur doped GaSe for mid-IR applications,” Appl. Phys. B108(3), 545–552 (2012).
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Zuev, V. V.

L.-M. Zhang, J. Guo, D.-J. Li, J.-J. Xie, Yu. M. Andreev, V. A. Gorobets, V. V. Zuev, K. A. Kokh, G. V. Lanskii, V. O. Petukhov, V. A. Svetlichnyi, and A. V. Shaiduko, “Dispersion properties of GaSe1-xSx in the terahertz range,” J. Appl. Spectrosc.77(6), 850–856 (2011).
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Figures (3)

Fig. 1
Fig. 1 EDX spectra revealing the increment of sulfur content in the crystals grown from the melt containing 1.1% (a), 2.5% (b) 5% (c) and 11 mass % (d) of sulfur.
Fig. 2
Fig. 2 Absorption spectra of the rigid layer phonon mode E'(2) at 0.59 THz with different spectral resolution.
Fig. 3
Fig. 3 Absorption spectra for o- (a) and e-waves (b) in the grown crystals. Dashed lines show cut & polished crystals whereas solid lines denote cleaved samples. The dash-dot line marks the limit of dynamic range for the THz-TDS used.

Equations (3)

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n( ν ) = 1 +c[ φ sample ( ν ) φ reference ( ν ) ] / ( 2 π ν d sample ),  α( ν ) = 2 / d sample ln[ E sample ( ν ) / ( T( ν ) E reference ( ν ) ) ],
 T( ν ) = 1 [ ( n( ν ) 1 ) / ( n( ν ) + 1 ) ] 2 .
α o =1.77357+ 548.673 λ ; α e =0.21373+ 97.914 λ .

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