Abstract

The authors report on the fabrication of p-Mg0.1Zn0.9O/n-GaN light emitting diodes (LEDs). Under forward bias, dominant ultraviolet (UV) electroluminescence is detected within 360-380 nm caused by near band edge (NBE) radiative recombination from both n-GaN and p-Mg0.1Zn0.9O. It is worth noting that the intensity ratio of UV-NBE/visible-DLE reaches up to 50, which indicates the potential applications of this structure in the short wavelength LEDs.

©2011 Optical Society of America

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  1. T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
    [Crossref]
  2. J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
    [Crossref]
  3. Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011).
    [Crossref] [PubMed]
  4. H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
    [Crossref]
  5. H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
    [Crossref] [PubMed]
  6. C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express 19(S4), A962–A971 (2011).
    [Crossref] [PubMed]
  7. X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
    [Crossref]
  8. Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1(8), 1439–1446 (2011).
    [Crossref]
  9. J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
    [Crossref]
  10. T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
    [Crossref]
  11. J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
    [Crossref]
  12. K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express 19(S4), A1008–A1021 (2011).
    [Crossref] [PubMed]
  13. R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
    [Crossref]
  14. J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
    [Crossref]
  15. M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
    [Crossref]
  16. H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
    [Crossref]
  17. S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
    [Crossref]
  18. H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
    [Crossref]
  19. B. E. Urban, J. Lin, O. Kumar, K. Senthilkumar, Y. Fujita, and A. Neogi, “Optimization of nonlinear optical properties of ZnO micro and nanocrystals for biophotonics,” Opt. Mater. Express 1(4), 658–669 (2011).
    [Crossref]
  20. N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
    [Crossref]
  21. Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
    [Crossref]
  22. Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
    [Crossref]
  23. A. Bera and D. Basak, “Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires,” ACS Appl. Mater. Interfaces 2(2), 408–412 (2010).
    [Crossref] [PubMed]
  24. D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
    [Crossref]
  25. G. Shukla, “ZnO/MgZnO p–n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique,” J. Phys. D Appl. Phys. 42(7), 075105 (2009).
    [Crossref]
  26. K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
    [Crossref]
  27. C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
    [Crossref]
  28. C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
    [Crossref]
  29. H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
    [Crossref]
  30. Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
    [Crossref]
  31. K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
    [Crossref]
  32. J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
    [Crossref]
  33. X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
    [Crossref]
  34. Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
    [Crossref]
  35. X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
    [Crossref]
  36. J. Neugebauer and C. G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN,” Appl. Phys. Lett. 69(4), 503–505 (1996).
    [Crossref]
  37. D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
    [Crossref]

2011 (15)

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

K. Hazu and S. F. Chichibu, “Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs,” Opt. Express 19(S4), A1008–A1021 (2011).
[Crossref] [PubMed]

Y. Kuo, S. Y. Ting, C. H. Liao, J. J. Huang, C. Y. Chen, C. Hsieh, Y. C. Lu, C. Y. Chen, K. C. Shen, C. F. Lu, D. M. Yeh, J. Y. Wang, W. H. Chuang, Y. W. Kiang, and C. C. Yang, “Surface plasmon coupling with radiating dipole for enhancing the emission efficiency of a light-emitting diode,” Opt. Express 19(S4), A914–A929 (2011).
[Crossref] [PubMed]

C. Wetzel and T. Detchprohm, “Wavelength-stable rare earth-free green light-emitting diodes for energy efficiency,” Opt. Express 19(S4), A962–A971 (2011).
[Crossref] [PubMed]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

B. E. Urban, J. Lin, O. Kumar, K. Senthilkumar, Y. Fujita, and A. Neogi, “Optimization of nonlinear optical properties of ZnO micro and nanocrystals for biophotonics,” Opt. Mater. Express 1(4), 658–669 (2011).
[Crossref]

Y. Ou, V. Jokubavicius, S. Kamiyama, C. Liu, R. W. Berg, M. Linnarsson, R. Yakimova, M. Syväjärvi, and H. Ou, “Donor-acceptor-pair emission characterization in N-B doped fluorescent SiC,” Opt. Mater. Express 1(8), 1439–1446 (2011).
[Crossref]

2010 (8)

J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
[Crossref]

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

A. Bera and D. Basak, “Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires,” ACS Appl. Mater. Interfaces 2(2), 408–412 (2010).
[Crossref] [PubMed]

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

2009 (4)

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

G. Shukla, “ZnO/MgZnO p–n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique,” J. Phys. D Appl. Phys. 42(7), 075105 (2009).
[Crossref]

H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
[Crossref]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

2008 (1)

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

2007 (2)

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

2006 (2)

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

2005 (2)

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

2004 (1)

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

2000 (1)

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

1996 (1)

J. Neugebauer and C. G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN,” Appl. Phys. Lett. 69(4), 503–505 (1996).
[Crossref]

Ahn, D.

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

Anwand, W.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Arif, R. A.

H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
[Crossref]

Ashfold, M. N. R.

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
[Crossref]

Basak, D.

A. Bera and D. Basak, “Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires,” ACS Appl. Mater. Interfaces 2(2), 408–412 (2010).
[Crossref] [PubMed]

Bera, A.

A. Bera and D. Basak, “Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires,” ACS Appl. Mater. Interfaces 2(2), 408–412 (2010).
[Crossref] [PubMed]

Berg, R. W.

Brauer, G.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Chang, Y.-C.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Che, Y.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Chen, C. Y.

Chichibu, S. F.

Chua, C.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Chuang, W. H.

Chung, R. B.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Clifton, P. H.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

Cohen, D. A.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Craig, R.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Dao, L. V.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

Davis, J. A.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

DenBaars, S. P.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Detchprohm, T.

Dierolf, V.

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Ding, G. W.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Dong, X.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Du, G. T.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Ee, Y.-K.

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

Einfeldt, S.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Fan, J. C.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Fan, X. W.

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Farrell, R. M.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Feezell, D. F.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Fox, N. A.

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
[Crossref]

Fuge, G. M.

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
[Crossref]

Fujita, Y.

Fujito, K.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Fung, S.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Gilchrist, J. F.

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

Grambole, D.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Gu, X. Q.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Guo, Z.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

Hall, C. R.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

Hama, K.

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Han, N. S.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

Hazu, K.

Heo, Y. W.

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

Hsieh, C.

Hu, W.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Huang, G. S.

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Huang, J. J.

Hwang, D. K.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

Inoue, M.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Ip, K.

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

Iveland, J.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Jagadish, C.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

Jiang, H. X.

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

Johnson, N. M.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Jokubavicius, V.

Kamiyama, S.

Kang, S. H.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

Keller, S.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Kiang, Y. W.

Kim, C.

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
[Crossref]

Kim, J.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

Kim, K. C.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Kim, M.

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
[Crossref]

Knauer, A.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Kneissl, M.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Koike, K.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Kolbe, T.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Krames, M. R.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Kumar, O.

Kumnorkaew, P.

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

Kuo, Y.

Kutlu, S.

J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

Kwon, H. K.

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

LaRoche, J. R.

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

Lau, S. S.

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

Lee, J. S.

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

Li, B.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Li, B. H.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Li, J. S.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Li, X. H.

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Li, X.-H.

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

Liao, C. H.

Lim, J. H.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

Lin, J.

Lin, J. Y.

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

Ling, C. C.

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Liu, C.

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H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
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J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
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Liu, Y. C.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
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Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
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Lu, Y. C.

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N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
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J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
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S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

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R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
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T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
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J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
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M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
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K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
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D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
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Ou, Y.

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S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

Park, S. H.

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
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Park, S. J.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
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Park, S. M.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
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Park, W. I.

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
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K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

Penn, S. T.

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
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Poblenz, C.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Poplawsky, J. D.

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Prosa, T. J.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
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J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
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K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

Rudy, P.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Saito, M.

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Sasa, S.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Schmidt, M. C.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Senthilkumar, K.

Seo, J. H.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

Shan, C. X.

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
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Shen, D. Z.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Shen, K. C.

Shen, Y. Q.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Shi, Z. F.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
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Shim, H. S.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

Shivaraman, R.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Shukla, G.

G. Shukla, “ZnO/MgZnO p–n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique,” J. Phys. D Appl. Phys. 42(7), 075105 (2009).
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Song, J. K.

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

Song, R.

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

Speck, J. S.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Sun, J.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
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Sun, Y.

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
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Syväjärvi, M.

Takada, G.

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Tan, H. H.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

Tang, Z. K.

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Tansu, N.

J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
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Ting, S. Y.

Tyagi, A.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

Urban, B. E.

Van de Walle, C. G.

J. Neugebauer and C. G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN,” Appl. Phys. Lett. 69(4), 503–505 (1996).
[Crossref]

Vogt, P.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
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Walters, B.

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Wang, J. Y.

Wang, X. H.

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Wei, Z. P.

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Wetzel, C.

Weyers, M.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Wong, K. S.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Wu, F.

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

Wu, J. D.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Xia, X. C.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Xie, Z.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Xu, N.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Xu, X. F.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Yakimova, R.

Yang, C. C.

Yang, E. J.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

Yang, J. H.

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

Yang, Z. H.

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

Yano, M.

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

Yao, B.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Ye, Z. Z.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Yeh, D. M.

Yi, G.-C.

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
[Crossref]

Ying, Z. F.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Yu, L. S.

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

Zeng, Y. J.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Zhang, B. L.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Zhang, J.

J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

Zhang, J. Y.

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Zhang, T. W.

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Zhang, Z. Z.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Zhao, B. H.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Zhao, D.

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

Zhao, D. X.

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

Zhao, H. P.

J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4), A991–A1007 (2011).
[Crossref] [PubMed]

J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
[Crossref]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

Zhao, L.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Zhao, W.

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

Zhong, H.

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

Zhong, Y. C.

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

Zhu, H.

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

Zhu, L. P.

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

ACS Appl. Mater. Interfaces (1)

A. Bera and D. Basak, “Photoluminescence and photoconductivity of ZnS-coated ZnO nanowires,” ACS Appl. Mater. Interfaces 2(2), 408–412 (2010).
[Crossref] [PubMed]

Appl. Phys. Express (1)

J. W. Raring, M. C. Schmidt, C. Poblenz, Y.-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, P. Rudy, J. S. Speck, S. P. DenBaars, and S. Nakamura, “High-Efficiency Blue and True-Green-Emitting Laser Diodes Based on Non-c-Plane Oriented GaN Substrates,” Appl. Phys. Express 3(11), 112101 (2010).
[Crossref]

Appl. Phys. Lett. (12)

H. P. Zhao, J. Zhang, G. Y. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett. 98(15), 151115 (2011).
[Crossref]

J. Zhang, H. P. Zhao, and N. Tansu, “Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers,” Appl. Phys. Lett. 97(11), 111105 (2010).
[Crossref]

T. Kolbe, A. Knauer, C. Chua, Z. H. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett. 97(17), 171105 (2010).
[Crossref]

J. Zhang, H. P. Zhao, and N. Tansu, “Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes,” Appl. Phys. Lett. 98(17), 171111 (2011).
[Crossref]

D. K. Hwang, S. H. Kang, J. H. Lim, E. J. Yang, J. Y. Oh, J. H. Yang, and S. J. Park, “p-ZnO/n-GaN heterostructure ZnO light-emitting diodes,” Appl. Phys. Lett. 86(22), 222101 (2005).
[Crossref]

C. Kim, W. I. Park, G.-C. Yi, and M. Kim, “Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO/ZnMgO multiple-quantum-well-structured nanorods,” Appl. Phys. Lett. 89(11), 113106 (2006).
[Crossref]

C. R. Hall, L. V. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, C. Jagadish, and J. A. Davis, “Using graded barriers to control the optical properties of ZnO/Zn0.7Mg0.3O quantum wells with an intrinsic internal electric field,” Appl. Phys. Lett. 96(19), 193117 (2010).
[Crossref]

Z. P. Wei, B. Yao, Z. Z. Zhang, Y. M. Lu, D. Z. Shen, B. H. Li, X. H. Wang, J. Y. Zhang, D. X. Zhao, X. W. Fan, and Z. K. Tang, “Formation of p-type MgZnO by nitrogen doping,” Appl. Phys. Lett. 89(10), 102104 (2006).
[Crossref]

K. Ip, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, and F. Ren, “Zn0.9Mg0.1O/ZnO p–n junctions grown by pulsed-laser deposition,” Appl. Phys. Lett. 85(7), 1169–1171 (2004).
[Crossref]

J. Neugebauer and C. G. Van de Walle, “Gallium vacancies and the yellow luminescence in GaN,” Appl. Phys. Lett. 69(4), 503–505 (1996).
[Crossref]

H. P. Zhao, G. Y. Liu, X. H. Li, G. S. Huang, J. D. Poplawsky, S. T. Penn, V. Dierolf, and N. Tansu, “Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth temperature profile,” Appl. Phys. Lett. 95(6), 061104 (2009).
[Crossref]

T. J. Prosa, P. H. Clifton, H. Zhong, A. Tyagi, R. Shivaraman, S. P. DenBaars, S. Nakamura, and J. S. Speck, “Atom probe analysis of interfacial abruptness and clustering within a single InxGa1-xN quantum well device on semipolar (10-1-1) GaN substrate,” Appl. Phys. Lett. 98(19), 191903 (2011).
[Crossref]

Chem. Phys. Lett. (1)

N. S. Han, H. S. Shim, J. H. Seo, S. M. Park, B. K. Min, J. Kim, and J. K. Song, “Optical properties and lasing of ZnO nanoparticles synthesized continuously in supercritical fluids,” Chem. Phys. Lett. 505(1-3), 51–56 (2011).
[Crossref]

IEEE J. Sel. Top. Quantum Electron. (1)

H. P. Zhao, R. A. Arif, and N. Tansu, “Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1104–1114 (2009).
[Crossref]

IEEE Photon. J. (1)

X.-H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light Extraction Efficiency and Radiation Patterns of III-Nitride Light-Emitting Diodes With Colloidal Microlens Arrays With Various Aspect Ratios,” IEEE Photon. J. 3(3), 489–499 (2011).
[Crossref]

J. Appl. Phys. (2)

D. Qiao, L. S. Yu, S. S. Lau, J. M. Redwing, J. Y. Lin, and H. X. Jiang, “Dependence of Ni/AlGaN Schottky barrier height on Al mole fraction,” J. Appl. Phys. 87(2), 801–804 (2000).
[Crossref]

J. Zhang, S. Kutlu, G. Y. Liu, and N. Tansu, “High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy,” J. Appl. Phys. 110(4), 043710 (2011).
[Crossref]

J. Cryst. Growth (2)

R. B. Chung, F. Wu, R. Shivaraman, S. Keller, S. P. DenBaars, J. S. Speck, and S. Nakamura, “Growth study and impurity characterization of AlxIn1-xN grown by metal organic chemical vapor deposition,” J. Cryst. Growth 324(1), 163–167 (2011).
[Crossref]

K. Koike, K. Hama, I. Nakashima, G. Takada, K. Ogata, S. Sasa, M. Inoue, and M. Yano, “Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (1 1 1)-oriented Si substrate toward UV-detector applications,” J. Cryst. Growth 278(1-4), 288–292 (2005).
[Crossref]

J. Lumin. (1)

X. C. Xia, Z. F. Shi, L. Zhao, W. Zhao, X. Dong, B. L. Zhang, and G. T. Du, “The luminescence of ZnO film grown on GaAs interlayer by PA-MOCVD,” J. Lumin. 131(2), 280–284 (2011).
[Crossref]

J. Phys. Chem. C (3)

Y. Sun, N. A. Fox, G. M. Fuge, and M. N. R. Ashfold, “Toward a Single ZnO Nanowire Homojunction,” J. Phys. Chem. C 114(49), 21338–21341 (2010).
[Crossref]

Z. Guo, D. Zhao, Y. C. Liu, D. Z. Shen, B. Yao, Z. Z. Zhang, B. H. Li, Z. Guo, and Y. C. Liu, “Electrically Pumped Single-Mode Lasing Emission of Self-Assembled n-ZnO Microcrystalline Film/p-GaN Heterojunction Diode,” J. Phys. Chem. C 114(36), 15499–15503 (2010).
[Crossref]

H. Zhu, C. X. Shan, B. H. Li, J. Y. Zhang, B. Yao, Z. Z. Zhang, D. X. Zhao, D. Z. Shen, and X. W. Fan, “Ultraviolet Electroluminescence from MgZnO-Based Heterojunction Light-Emitting Diodes,” J. Phys. Chem. C 113(7), 2980–2982 (2009).
[Crossref]

J. Phys. D Appl. Phys. (2)

G. Shukla, “ZnO/MgZnO p–n junction light-emitting diodes fabricated on sapphire substrates by pulsed laser deposition technique,” J. Phys. D Appl. Phys. 42(7), 075105 (2009).
[Crossref]

X. H. Pan, Z. Z. Ye, Y. J. Zeng, X. Q. Gu, J. S. Li, L. P. Zhu, B. H. Zhao, Y. Che, and X. Q. Pan, “Preparation of p-type ZnMgO thin films by Sb doping method,” J. Phys. D Appl. Phys. 40(14), 4241–4244 (2007).
[Crossref]

Jpn. J. Appl. Phys. (1)

M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes,” Jpn. J. Appl. Phys. 46(9), L190–L191 (2007).
[Crossref]

Mater. Sci. Eng. A (1)

Y. Q. Shen, W. Hu, T. W. Zhang, X. F. Xu, J. Sun, J. D. Wu, Z. F. Ying, and N. Xu, “Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation,” Mater. Sci. Eng. A 473(1-2), 201–205 (2008).
[Crossref]

Opt. Express (4)

Opt. Mater. Express (2)

Phys. Status Solidi A (1)

S. H. Park, Y. T. Moon, J. S. Lee, H. K. Kwon, J. S. Park, and D. Ahn, “Spontaneous emission rate of green strain-compensated InGaN/InGaN LEDs using InGaN substrate,” Phys. Status Solidi A 208(1), 195–198 (2011).
[Crossref]

Semicond. Sci. Technol. (1)

J. C. Fan, G. W. Ding, S. Fung, Z. Xie, Y. C. Zhong, K. S. Wong, G. Brauer, W. Anwand, D. Grambole, and C. C. Ling, “Shallow acceptor and hydrogen impurity in p-type arsenic-doped ZnMgO films grown by radio frequency magnetron sputtering,” Semicond. Sci. Technol. 25(8), 085009 (2010).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1 The XRD spectrum of the p-Mg0.1Zn0.9O film, the inset shows the As3d XPS spectrum.
Fig. 2
Fig. 2 The PL spectra of n-GaN and p-Mg0.1Zn0.9O films.
Fig. 3
Fig. 3 The schematic diagram and I-V curve of p-Mg0.1Zn0.9O/n-GaN LED, the inset shows the I-V curve of n-MgZnO/n-GaN structure.
Fig. 4
Fig. 4 EL spectra of the UV emission as a function of the injection current, the inset shows the Gaussian fitting analysis of the UV emission peak obtained at 160 mA.
Fig. 5
Fig. 5 Energy band diagrams of the p-MgZnO/n-GaN heterojunction device under (a) thermal equilibrium and (b) forward bias cases.

Equations (2)

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Δ E C = χ GaN χ MgZnO =4.2eV4.0eV=0.2eV
Δ E V =( χ GaN + E g GaN )( χ MgZnO + E g MgZnO )=0.26eV

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