Abstract

In this Letter, the reduction of undesired high dark current caused by defect states in solution-processed perovskite for photodetectors is realized with the introduction of an ultrathin buffer layer of PBDB-T:IHIC bulk heterojunction (BHJ). By controlling the concentration of BHJ precisely during a solution process, a low dark current density ($ J_d $) of ${1.01} \times {{10}^{- 4}}\;{\rm mA}/{{\rm cm}^2}$ and a high specific detectivity ($D^*$) of ${2.61} \times {{10}^{12}}\;{\rm Jones}$ were achieved. It was found that low $ J_d $ is attributed to the passivation effect of BHJ on defect states, where BHJ acts as a Lewis base and interacts with unbonded ${{\rm Pb}^{2 +}}$ in perovskite. This Letter demonstrates that the application of ultrathin organic BHJ has significant potential for the manufacturing of high-performance optoelectronic devices.

© 2020 Optical Society of America

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