High-reflection Mo/Be/Si multilayers for EUV lithography

Nikolai I. Chkhalo; Sergei A. Gusev; Andrey N. Nechay; Dmitry E. Pariev; Vladimir N. Polkovnikov; Nikolai N. Salashchenko; Franz Schäfers; Mewael G. Sertsu; Andrey Sokolov; Mikhail V. Svechnikov; Dmitry A. Tatarsky

doi:10.1364/OL.42.005070

Optics Letters
Vol. 42,
Issue 24,
pp. 5070-5073
(2017)
•https://doi.org/10.1364/OL.42.005070

High-reflection Mo/Be/Si multilayers for EUV lithography

Nikolai I. Chkhalo, Sergei A. Gusev, Andrey N. Nechay, Dmitry E. Pariev, Vladimir N. Polkovnikov, Nikolai N. Salashchenko, Franz Schäfers, Mewael G. Sertsu, Andrey Sokolov, Mikhail V. Svechnikov, and Dmitry A. Tatarsky

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Nikolai I. Chkhalo, Sergei A. Gusev, Andrey N. Nechay, Dmitry E. Pariev, Vladimir N. Polkovnikov, Nikolai N. Salashchenko, Franz Schäfers, Mewael G. Sertsu, Andrey Sokolov, Mikhail V. Svechnikov, and Dmitry A. Tatarsky, "High-reflection Mo/Be/Si multilayers for EUV lithography," Opt. Lett. 42, 5070-5073 (2017)

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Abstract

The effect of Be layers on the reflection coefficients of Mo/Be/Si multilayer mirrors in the extreme ultraviolet (EUV) region is reported. Samples were studied using laboratory and synchrotron based reflectometry, and high-resolution transmission electron microscopy. The samples under study have reflection coefficients above 71% at 13.5 nm and more than 72% at 12.9 nm in a near normal incidence mode. Calculations show that by optimizing the thickness of the Be layer it should be possible to increase the reflection coefficient by another 0.5–1%. These results are of considerable interest for EUV lithography.

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MLM	$N$	$⟨ d ⟩$ , nm	$⟨ h (M) ⟩$ , nm	Interface Width, nm
Mo/Be	110	5.85	$h (Be) = 3.61$ $h (Mo) = 2.24$	$Mo - on - Be = 0.73$ $Be - on - Mo = 0.36$
Mo/Be/Si	110	5.85	$h (Si) = 0.43$ $h (Be) = 3.09$ $h (Mo) = 2.33$	$Mo - on - Si = 0.74$ $Si - on - Be = 0.15$ $Be - on - Mo = 0.27$

Structure, nm	$N$	$Δ λ_{1 / 2}$ , nm	$R$ , %
Mo(2.54)/Be(1.41)/Si(2.96)	110	0.556	75.1
Mo(2.67)/Si(4.23)	110	0.573	74.0
$Mo (2.34) / B_{4} C (0.3) / Si (3.96) / B_{4} C (0.3)$	110	0.567	72.9
Mo(2.48)/Si(4.12)/C(0.3)	110	0.570	73.8

Sample	$N$	$⟨ d ⟩$ , m	$⟨ h (M) ⟩$ , nm	Interface Width, nm
D385	110	6.949	$h (Si) = 2.75$ $h (Be) = 2.06$ $h (Mo) = 2.14$	$Mo - on - Si = 0.54$ $Si - on - Be = 0.73$ $Be - on - Mo = 0.23$
D386	110	6.971	$h (Si) = 2.55$ $h (Be) = 2.27$ $h (Mo) = 2.15$	$Mo - on - Si = 0.60$ $Si - on - Be = 0.63$ $Be - on - Mo = 0.22$
D387	110	7.060	$h (Si) = 2.68$ $h (Be) = 2.03$ $h (Mo) = 2.35$	$Mo - on - Si = 0.57$ $Si - on - Be = 0.84$ $Be - on - Mo = 0.22$
D388	110	6.918	$h (Si) = 2.30$ $h (Be) = 2.19$ $h (Mo) = 2.43$	$Mo - on - Si = 0.42$ $Si - on - Be = 0.74$ $Be - on - Mo = 0.22$

MLM	Film Thickness, nm	Measurement Type	$λ$ , nm	$θ$ , °	$R$ , %
D385	Mo(2.14)/Be(2.059)/Si(2.75)	spectral $Δ λ_{1 / 2} = 0.477 nm$	13.63	88.0	71.11
		angular	13.53	81.9	71.12
		angular	13.49	80.9	71.15
		angular	13.04	72.2	71.97

D386	Mo(2.15)/Be(2.271)/Si(2.55)	spectral $Δ λ_{1 / 2} = 0.485 nm$	13.66	88.0	70.82
D386	Mo(2.15)/Be(2.271)/Si(2.55)	angular	13.53	81.0	71.1

D387	Mo(2.35)/Be(2.03)/Si(2.68)	spectral $Δ λ_{1 / 2} = 0.515 nm$	13.8	88.0	71.3
		angular	13.78	86.1	71.42
		angular	13.49	77.1	71.89
		angular	13.20	72.3	72.32
		angular	12.92	68.7	72.83

D388	Mo(2.43)/Be(2.19)/Si(2.30)	spectral $Δ λ_{1 / 2} = 0.524 nm$	13.87	88.0	70.20
D388	Mo(2.43)/Be(2.19)/Si(2.30)	angular	13.49	76.0	71.40

MLM	$N$	$⟨ d ⟩$ , nm	$⟨ h (M) ⟩$ , nm	Interface Width, nm
Mo/Be	110	5.85	$h (Be) = 3.61$ $h (Mo) = 2.24$	$Mo - on - Be = 0.73$ $Be - on - Mo = 0.36$
Mo/Be/Si	110	5.85	$h (Si) = 0.43$ $h (Be) = 3.09$ $h (Mo) = 2.33$	$Mo - on - Si = 0.74$ $Si - on - Be = 0.15$ $Be - on - Mo = 0.27$

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Optics Letters