Abstract
On-chip silicon polarizers have been widely used in polarization controllers. However, there is limited research on all-silicon polarizer covering the whole optical communication band due to the strong waveguide dispersion for silicon waveguides. In this Letter, we demonstrated an all-silicon TE polarizer with high polarization extinction ratio and low insertion loss, working for the whole optical communication band. The device is based on a shallow-etched waveguide realized on a silicon-on-insulator (SOI) platform. The optical field of TE polarization is designed to be tightly confined in the shallow-etched silicon waveguide, while that of TM polarization is weakly confined. As a result, TE polarization propagates through the waveguide with low loss, while TM polarization leaks into the substrate and decays finally. The measurements show that a maximum insertion loss ${\lt}{0.25}\;{\rm{dB}}$ and polarization extinction ratio $({\rm{PER}}) \gt {{20}}\;{\rm{dB}}$ over an ultrabroad operation band from 1260–1675 nm have been achieved for the proposed polarizer.
© 2021 Optical Society of America
Full Article | PDF ArticleMore Like This
Xiao Li, Zongxing Lin, and Sailing He
Opt. Lett. 47(8) 2065-2068 (2022)
Hongnan Xu, Daoxin Dai, and Yaocheng Shi
Photon. Res. 7(12) 1432-1439 (2019)
Syed Z. Ahmed, Ishtiaque Ahmed, Md Borhan Mia, Nafiz Jaidye, and Sangsik Kim
Opt. Lett. 46(9) 2164-2167 (2021)