Abstract

All-inorganic lead-free perovskite ${{\rm{Cs}}_3}{{\rm{Cu}}_2}{{\rm{I}}_5}$ thin films were prepared using pulsed laser deposition. Effects of the substrate temperature, laser energy, and laser frequency on the film structure and optoelectronic properties were studied. A heterojunction photodetector based on ${{\rm{Cs}}_3}{{\rm{Cu}}_2}{{\rm{I}}_5}/{\rm{n}} - {\rm{Si}}$ was constructed, and the deep-ultraviolet photoresponse was obtained. A high ${{\rm{I}}_{\rm{light}}}/{{\rm{I}}_{\rm{dark}}}$ ratio of 130 was achieved at ${-}{1.3}\;{\rm{V}}$, and the peak response of the heterojunction photodetector was 70.8 mA/W (280 nm), with the corresponding specific detectivity of ${9.44} \times {{10}^{11}}\;{\rm{cm}} \cdot {{\rm{Hz}}^{1/2}} \cdot {{\rm{W}}^{- 1}}$. Moreover, the device showed good stability after being exposed to air for 30 days.

© 2021 Optical Society of America

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