Abstract

We report on a normal-incidence infrared photoconductor based on surface-state absorption in silicon, featuring broad-spectrum photoresponse, sensitivity of ${-}46\;{\rm dBm} $ enabled by lock-in readouts, CMOS-compatible fabrication process, and near transparency to incident light. Its applications in infrared imaging and measuring the beam profiles are demonstrated and presented. Future extension from this single-pixel element to a many-pixel camera is discussed.

© 2021 Optical Society of America

Temperature-dependent characteristics of infrared photodetectors based on surface-state absorption in silicon

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