Abstract

The p-CuI/n-ZnO heterojunction photodetectors have been fabricated by thermal evaporation technique and pulsed laser deposition with a tubular furnace. The morphology, structure, and the light response performances of the device were investigated. The p-CuI/n-ZnO heterojunction photodetectors demonstrated a high on/off ratio of 5500, high peak responsivity of 0.235 A/W, and high specific detectivity of ${1.23} \times {{10}^{12}}\,\,{{\rm cmHz}^{1/2}}/{\rm W}$ at $ - {5}\,\,{\rm V}$ bias voltage under 385 nm light illumination. Furthermore, the p-CuI/n-ZnO heterojunction photodetectors exhibited excellent reproducibility and stability.

© 2020 Optical Society of America

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