Abstract

High-purity silicon is a readily available material of utility in realizing a variety of long-wavelength optical and guided wave components. The transmittance of uncompensated for silicon is measured in the far- and mid-infrared regimes at room and cryogenic temperatures. The experimental and analysis techniques used to extract the refractive index from $100 {-} 1000\;{{\rm cm}^{- 1}}$ (100–10 µm) are presented, and the results are compared to the literature. An average refractive index below $300\;{{\rm cm}^{- 1}}$, $\hat n({300\,\,{\rm K}}) = 3.417 + i\;8.9 \times {10^{- 5}}$, which transitions in cooling to $\hat n({10\,\,{\rm K}}) = 3.389 + i\;4.9 \times {10^{- 6}}$, is observed.

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