Doping-induced plateau of strong electromagnetic confinement in the momentum space

Rushin Contractor; Wanwoo Noh; Quynh Le-Van; Boubacar Kanté; Boubacar Kanté; Boubacar Kanté; Boubacar Kanté

doi:10.1364/OL.395625

Optics Letters
Vol. 45,
Issue 13,
pp. 3653-3656
(2020)
•https://doi.org/10.1364/OL.395625

Doping-induced plateau of strong electromagnetic confinement in the momentum space

Rushin Contractor, Wanwoo Noh, Quynh Le-Van, and Boubacar Kanté

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Rushin Contractor, Wanwoo Noh, Quynh Le-Van, and Boubacar Kanté, "Doping-induced plateau of strong electromagnetic confinement in the momentum space," Opt. Lett. 45, 3653-3656 (2020)

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- Optical Devices
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About this Article
History
- Original Manuscript: April 20, 2020
- Revised Manuscript: May 28, 2020
- Manuscript Accepted: May 29, 2020
- Published: June 29, 2020

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Abstract

In this Letter, we present a design strategy for the realization of electrically powered bound states in the continuum (BIC) lasers. Despite growing attention of the optics community for BICs, practical uses of BICs in an active device are still unestablished. A large index contrast and out-of-plane symmetries that aid the formation of BICs are not trivial to achieve using conventional approaches for semiconductor laser design. Here, we propose a doping scheme to circumvent this issue. We also show that the introduction of material absorption due to carriers deteriorates the quality factor of BIC modes and show that a suitable compromise between electrical conductivity and optical loss can be achieved.

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Layer	Material	Thickness (nm)	Doping
10	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$2.7 \times 10^{19}$ Si
9	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
8	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
7 ( $\times 4$ )	${I n}_{0.56} {G a}_{0.44} {A s}_{0.93} P_{0.07}$	10
6 ( $\times 4$ )	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
5	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
4	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$3 \times 10^{18}$ Zn
3	InP	1000
2	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	100
1	InP	100
Total thickness (4–10)		300

Layer	Material	Thickness (nm)	Doping
12	InP	100	$2.7 \times 10^{19}$ Si
11	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$1 \times 10^{16}$ Si
10	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
8	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
8 ( $\times 4$ )	${I n}_{0.56} {G a}_{0.44} {A s}_{0.93} P_{0.07}$	10
7 ( $\times 4$ )	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
6	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
5	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$1 \times 10^{16}$ Zn
4	InP	800	$3 \times 10^{19}$ Zn
3	InP	500
2	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	100
1	InP	100
Total thickness (5–11)		300

Layer	Material	Thickness (nm)	Doping
10	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$2.7 \times 10^{19}$ Si
9	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
8	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
7 ( $\times 4$ )	${I n}_{0.56} {G a}_{0.44} {A s}_{0.93} P_{0.07}$	10
6 ( $\times 4$ )	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
5	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
4	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$3 \times 10^{18}$ Zn
3	InP	1000
2	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	100
1	InP	100
Total thickness (4–10)		300

Layer	Material	Thickness (nm)	Doping
12	InP	100	$2.7 \times 10^{19}$ Si
11	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$1 \times 10^{16}$ Si
10	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
8	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
8 ( $\times 4$ )	${I n}_{0.56} {G a}_{0.44} {A s}_{0.93} P_{0.07}$	10
7 ( $\times 4$ )	${I n}_{0.74} {G a}_{0.26} {A s}_{0.57} P_{0.43}$	20
6	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	20
5	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	60	$1 \times 10^{16}$ Zn
4	InP	800	$3 \times 10^{19}$ Zn
3	InP	500
2	${I n}_{0.77} {G a}_{0.23} {A s}_{0.49} P_{0.51}$	100
1	InP	100
Total thickness (5–11)		300

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Optics Letters