Abstract

We demonstrated regenerative laser pulse amplification at 640 nm for the first time, to the best of our knowledge, with a mode-locked ${\mathrm{Pr}}^{3+}$-doped ${\mathrm{LiYF}}_4$ (${\mathrm{Pr}}^{3+}\text{:}\mathrm{YLF}$) oscillator as a picosecond seed pulse. A regenerative amplifier with a ${\mathrm{Pr}}^{3+}\text{:}\mathrm{YLF}$ crystal was continuously pumped by a multimode InGaN diode laser. At an absorbed pump power of 3.1 W, we obtained amplified pulse energy of 13 μJ at 10 kHz with an excellent spatial beam quality of $M^2\sim 1.1$, demonstrated second-harmonic generation, and obtained a 320 nm pulse energy of 5.9 μJ.

© 2019 Optical Society of America

640-nm Pr:YLF regenerative amplifier seeded by gain-switched laser diode pulses

Yusaku Hara, Shogo Fujita, Yuta Shioya, and Fumihiko Kannari
Appl. Opt. 59(17) 5098-5101 (2020)

Diode-pumped Nd:YLF regenerative amplifier

Martin Gifford and Kurt J. Weingarten
Opt. Lett. 17(24) 1788-1790 (1992)

30-mJ, diode-pumped, chirped-pulse Yb:YLF regenerative amplifier

Junji Kawanaka, Koichi Yamakawa, Hajime Nishioka, and Ken-ichi Ueda
Opt. Lett. 28(21) 2121-2123 (2003)

Pr³⁺:YLF mode-locked laser at 640 nm directly pumped by InGaN-diode lasers

Kodai Iijima, Ryosuke Kariyama, Hiroki Tanaka, and Fumihiko Kannari
Appl. Opt. 55(28) 7782-7787 (2016)

Watt-level 729-nm Pr³⁺:YLF laser pumped by an InGaN laser diode

Run Fang, Zhiping Cai, and Huiying Xu
Opt. Lett. 47(16) 4267-4270 (2022)