Abstract

The broadband nonlinear absorption in ZnO nanocrystals embedded in ${\mathrm{Al}}_2{\mathrm{O}}_3$ matrix was investigated by $Z$-scan and pump–probe techniques from 400 nm to 800 nm. The effective two-photon absorption and three-photon absorption coefficients were determined to be $\sim 1.1\times {10}^3\mathrm{cm}/\mathrm{GW}$ at 400 nm and $\sim 1.1\times {10}^{-1}{\mathrm{cm}}^3/{\mathrm{GW}}^2$ at 800 nm, respectively, which are at least two orders of magnitude greater than that in ZnO bulk crystal. It may be attributed to the defect-states-mediated multiphoton absorption process, which was proofed by comparison experiments with different densities of interfacial defect states. The corresponding lifetimes for the intraband relaxation, defect-states trapping, and interband recombination processes were measured by femtosecond transient absorption measurements as $\tau 1\sim 1\mathrm{ps}$, $\tau 2\sim 13\mathrm{ps}$, and $\tau 3\sim 350\mathrm{ps}$, respectively.

© 2018 Optical Society of America

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