Abstract

We investigated the Ge-on-Si photodetector’s performance enhancement by optimizing the detector length, therefore, the location of the distributed Bragg reflector (DBR). Since the unabsorbed signal light in the photodetector oscillates between the germanium and silicon layers, but the DBR is on the silicon layer, the optimized location of the DBR will result in shorter devices, with increased bandwidth, reduced dark current, and consistent responsivity. The 5 μm long photodetector with an optimized DBR location shows responsivity of 0.72 A/W, at least 31.7 GHz 3 dB bandwidth; the dark current is only 7 nA at 1550 nm.

© 2017 Optical Society of America

Mode-evolution-based coupler for high saturation power Ge-on-Si photodetectors

Matthew J. Byrd, Erman Timurdogan, Zhan Su, Christopher V. Poulton, Nicholas M. Fahrenkopf, Gerald Leake, Douglas D. Coolbaugh, and Michael R. Watts
Opt. Lett. 42(4) 851-854 (2017)

High-performance waveguide-coupled lateral Ge/Si avalanche photodetector

Yaqing Pang, Zhi Liu, Yupeng Zhu, Xiangquan Liu, Diandian Zhang, Chaoqun Niu, Mingming Li, Jun Zheng, Yuhua Zuo, and Buwen Cheng
Opt. Lett. 47(17) 4463-4466 (2022)

High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic–photonic integrated circuits at telecommunication wavelengths

Tzu-Yang Huang, Radhika Bansal, Soumava Ghosh, Kwang Hong Lee, Qimiao Chen, Chuan Seng Tan, and Guo-En Chang
Opt. Lett. 49(5) 1281-1284 (2024)

Whispering gallery germanium-on-silicon photodetector

Zhan Su, Ehsan Shah Hosseini, Erman Timurdogan, Jie Sun, Michele Moresco, Gerald Leake, Thomas N. Adam, Douglas D. Coolbaugh, and Michael R. Watts
Opt. Lett. 42(15) 2878-2881 (2017)

High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si

Ali K. Okyay, Ammar M. Nayfeh, Krishna C. Saraswat, Takao Yonehara, Ann Marshall, and Paul C. McIntyre
Opt. Lett. 31(17) 2565-2567 (2006)