Abstract
We report enhanced photoluminescence in the telecommunications wavelength range in ring resonators patterned in hydrogenated amorphous silicon thin films deposited via low-temperature plasma enhanced chemical vapor deposition. The thin films exhibit broadband photoluminescence that is enhanced by up to 5 dB by the resonant modes of the ring resonators due to the Purcell effect. Ellipsometry measurements of the thin films show a refractive index comparable to crystalline silicon and an extinction coefficient on the order of 0.001 from 1300 nm to 1600 nm wavelengths. The results are promising for chip-scale integrated optical light sources.
© 2017 Optical Society of America
Full Article | PDF ArticleMore Like This
Kangmei Li, Hongcheng Sun, and Amy C. Foster
Opt. Lett. 42(8) 1488-1491 (2017)
Li-Yang Sunny Chang, Steve Pappert, and Paul K. L. Yu
Opt. Lett. 48(5) 1188-1191 (2023)
Qingyang Du, Yizhong Huang, Okechukwu Ogbuu, Wei Zhang, Junying Li, Vivek Singh, Anuradha M. Agarwal, and Juejun Hu
Opt. Lett. 42(3) 587-590 (2017)