Abstract
In this Letter, a light management structure composed of wedge-shaped semiconductor nanowall arrays is introduced. Theoretical investigation based on gallium arsenide (GaAs) indicates that a 1000 nm high array (wall base width/array periodicity: 500 nm) with an effective thickness of only 500 nm can deliver a maximum photocurrent density () of at AM1.5G illumination. (For an ideal absorber with the same bandgap, the corresponding value is .) However, of a 1500 nm thick flat GaAs film is only at the same illumination condition. The wedge-shaped nanowall arrays meanwhile exhibit good omnidirectional light confinement. At the incident angle of 60°, of the aforementioned nanowall array is , and the corresponding value for an ideal absorber is . Considering the simple structure and excellent light confinement in a broad range of the system parameters, including array periodicity, the nanowall height, and the incident angle of light, the wedge-shaped semiconductor nanowall arrays provide a valuable platform for fabricating the related high performance-to-cost semiconductor optoelectronic devices.
© 2017 Optical Society of America
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