Abstract

We report the fabrication of periodic structures with a critical dimension of 90 nm on a fused silica substrate by i-line ($\lambda =365\mathrm{nm}$) proximity mask-aligner lithography. This realization results from the combination of the improvements of the optical system in the mask aligner (known as MO exposure optics), short-period phase-mask optimization, and the implementation of self-aligned double patterning (SADP). A 350 nm period grating is transferred into a sacrificial polymer layer and coated with an aluminum layer. The removal of the metal initially present on the horizontal surfaces and on top of the polymer grating leaves a 175 nm period grating on the wafer, which can be used as a wire grid polarizer. A computation of the efficiency is performed from the measured profile and confirms the deep-blue visible to infra-red operation range.

© 2017 Optical Society of America

250  nm period grating transferred by proximity i-line mask-aligner lithography

Yannick Bourgin, Thomas Käsebier, and Uwe D. Zeitner
Opt. Lett. 39(6) 1665-1668 (2014)

Double-sided structured mask for sub-micron resolution proximity i-line mask-aligner lithography

Yannick Bourgin, Thomas Siefke, Thomas Käsebier, Pascal Genevée, Adriana Szeghalmi, Ernst-Bernhard Kley, and Uwe D. Zeitner
Opt. Express 23(13) 16628-16637 (2015)

Pulse compression grating fabrication by diffractive proximity photolithography

Lorenz Stuerzebecher, Frank Fuchs, Torsten Harzendorf, and Uwe D. Zeitner
Opt. Lett. 39(4) 1042-1045 (2014)

Advanced mask aligner lithography: Fabrication of periodic patterns using pinhole array mask and Talbot effect

Lorenz Stuerzebecher, Torsten Harzendorf, Uwe Vogler, Uwe D. Zeitner, and Reinhard Voelkel
Opt. Express 18(19) 19485-19494 (2010)

Moiré fringe alignment using composite circular-line gratings for proximity lithography

Feng Xu, Shaolin Zhou, Song Hu, Wenbo Jiang, Liang Luo, and Hongyu Chu
Opt. Express 23(16) 20905-20915 (2015)