Abstract

In this Letter, we show the synchronization of two 2-mm-gap gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS), which are in parallel and triggered by two laser diodes (LDs) independently. The comparison of the synchronization is measured by varying the bias electric field and optical excitation energy, respectively. An optimum synchronization is achieved as low as 200.5 ps, while the GaAs PCSS are biased at 1.2 kV with optical excitation energy of 1.91 μJ. The simulations demonstrate the relationship between the synchronization, the carriers average drift velocity, and the number of carriers undergoing intervalley scattering.

© 2016 Optical Society of America

Effects of trigger laser pulse width on the jitter time of GaAs photoconductive semiconductor switch

Wei Shi, Huaimeng Gui, Lin Zhang, Cheng Ma, Mengxia Li, Ming Xu, and Luyi Wang
Opt. Lett. 38(13) 2330-2332 (2013)

Influence of the incident laser pulse energy on jitter time of GaAs photoconductive semiconductor switches

Wei Shi, Huai-meng Gui, Lin Zhang, Meng-xia Li, Cheng Ma, Lu-yi Wang, and Huan Jiang
Opt. Lett. 38(21) 4339-4341 (2013)

Nanostructure enabled lower on-state resistance and longer lock-on time GaAs photoconductive semiconductor switches

Ruijia Liu, Annan Shang, Chang-Jiang Chen, Yun Goo Lee, and Shizhuo Yin
Opt. Lett. 46(4) 825-828 (2021)

Ruby fluorescence-enabled ultralong lock-on time high-gain gallium arsenic photoconductive semiconductor switch

Ju-Hung Chao, Wenbin Zhu, Chang-Jiang Chen, Yun-Goo Lee, Annan Shang, Shizhuo Yin, and Robert C. Hoffman
Opt. Lett. 43(16) 3929-3932 (2018)

Dependence of conduction characteristics on compensation type and lattice structure of SiC photoconductive semiconductor switches

Zhuoyun Feng, Longfei Xiao, Chongbian Luan, Yangfan Li, Huiru Sha, Hongtao Li, and Xiangang Xu
Appl. Opt. 60(11) 3182-3186 (2021)